Methods for depositing metal on a reactive metal film
US-2015348836-A1 · Dec 3, 2015 · US
US2023203664A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2023203664-A1 |
| Application number | US-202318178596-A |
| Country | US |
| Kind code | A1 |
| Filing date | Mar 6, 2023 |
| Priority date | Sep 8, 2020 |
| Publication date | Jun 29, 2023 |
| Grant date | — |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A wiring board includes a substrate having main surfaces and an electrode containing Cu or Ag as a main component on at least one main surface of the substrate, wherein the electrode protrudes from the substrate, a surface of the electrode is covered by a first Ni film containing crystalline Ni as a main component, a surface of the first Ni film is covered by a second Ni film containing amorphous Ni as a main component, and the first Ni film covers a part of a first corner where a side surface of the electrode is in contact with the substrate.
Opening claim text (preview).
1 . A wiring board comprising: a substrate having main surfaces; and an electrode containing Cu or Ag as a main component on at least one of the main surfaces of the substrate, wherein the electrode protrudes from the substrate, a surface of the electrode is covered by a first Ni film containing crystalline Ni as a main component, a surface of the first Ni film is covered by a second Ni film containing amorphous Ni as a main component, and the first Ni film covers a part of a first corner where a side surface of the electrode is in contact with the substrate. 2 . The wiring board according to claim 1 , wherein the first Ni film contains Ni—B, Ni—N, or pure Ni as a main component, and the second Ni film contains Ni—P as a main component. 3 . A wiring board comprising: a substrate having main surfaces; and an electrode containing Cu or Ag as a main component on at least one of the main surfaces of the substrate, wherein the electrode protrudes from the substrate, a surface of the electrode is covered by a first Ni film, a surface of the first Ni film is covered by a second Ni film, the first Ni film contains Ni—B, Ni—N, or pure Ni as a main component, the second Ni film contains Ni—P as a main component, and the first Ni film covers a part of a first corner where a side surface of the electrode is in contact with the substrate. 4 . The wiring board according to claim 1 , wherein the second Ni film covers a part of a second corner where a side surface of the first Ni film is in contact with the substrate. 5 . The wiring board according to claim 1 , wherein the second Ni film is thicker than the first Ni film. 6 . The wiring board according to claim 1 , wherein a total thickness of the first Ni film and the second Ni film is 3 μm or more and 10 μm or less. 7 . A method of producing the wiring board as defined in claim 1 , the method comprising: forming the first Ni film by an electroless nickel plating treatment using a N-containing reducing agent or a B-containing reducing agent as a reducing agent; and forming the second Ni film by an electroless nickel plating treatment using a P-containing reducing agent as a reducing agent. 8 . The wiring board according to claim 2 , wherein the second Ni film covers a part of a second corner where a side surface of the first Ni film is in contact with the substrate. 9 . The wiring board according to claim 3 , wherein the second Ni film covers a part of a second corner where a side surface of the first Ni film is in contact with the substrate. 10 . The wiring board according to claim 2 , wherein the second Ni film is thicker than the first Ni film. 11 . The wiring board according to claim 3 , wherein the second Ni film is thicker than the first Ni film. 12 . The wiring board according to claim 4 , wherein the second Ni film is thicker than the first Ni film. 13 . The wiring board according to claim 2 , wherein a total thickness of the first Ni film and the second Ni film is 3 μm or more and 10 μm or less. 14 . The wiring board according to claim 3 , wherein a total thickness of the first Ni film and the second Ni film is 3 μm or more and 10 μm or less. 15 . The wiring board according to claim 4 , wherein a total thickness of the first Ni film and the second Ni film is 3 μm or more and 10 μm or less. 16 . The wiring board according to claim 5 , wherein a total thickness of the first Ni film and the second Ni film is 3 μm or more and 10 μm or less. 17 . A method of producing the wiring board as defined in claim 2 , the method comprising: forming the first Ni film by an electroless nickel plating treatment using a N-containing reducing agent or a B-containing reducing agent as a reducing agent; and forming the second Ni film by an electroless nickel plating treatment using a P-containing reducing agent as a reducing agent. 18 . A method of producing the wiring board as defined in claim 3 , the method comprising: forming the first Ni film by an electroless nickel plating treatment using a N-containing reducing agent or a B-containing reducing agent as a reducing agent; and forming the second Ni film by an electroless nickel plating treatment using a P-containing reducing agent as a reducing agent. 19 . A method of producing the wiring board as defined in claim 4 , the method comprising: forming the first Ni film by an electroless nickel plating treatment using a N-containing reducing agent or a B-containing reducing agent as a reducing agent; and forming the second Ni film by an electroless nickel plating treatment using a P-containing reducing agent as a reducing agent. 20 . A method of producing the wiring board as defined in claim 5 , the method comprising: forming the first Ni film by an electroless nickel plating treatment using a N-containing reducing agent or a B-containing reducing agent as a reducing agent; and forming the second Ni film by an electroless nickel plating treatment using a P-containing reducing agent as a reducing agent.
using a liquid · CPC title
of conductive or resistive materials · CPC title
Insulating materials thereof · CPC title
Manufacture or treatment · CPC title
on hard metal substrates · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.