Semiconductor laser element and method of producing semiconductor laser element

Patent metadata

Field	Value
Publication number	US-2023187897-A1
Application number	US-202117998359-A
Country	US
Kind code	A1
Filing date	May 13, 2021
Priority date	May 21, 2020
Publication date	Jun 15, 2023
Grant date	—

Abstract

[Object] To provide a semiconductor laser element capable of preventing current leakage in junction-down mounting and a method of producing the semiconductor laser element.[Solving Means] A semiconductor laser element according to the present technology includes: a stacked body. The stacked body includes a substrate, an n-type semiconductor layer that is formed on the substrate, is formed of an n-type semiconductor material, and has a core that is a defect concentration region, an active layer that is formed on the n-type semiconductor layer, and a p-type semiconductor layer that is formed on the active layer and is formed of a p-type semiconductor material, and has a recessed portion formed from a surface of the p-type semiconductor layer to have a depth reaching the core and an ion implantation region that is formed by implanting ions into a region including the core.

First claim

1 . A semiconductor laser element, comprising:
a stacked body that includes a substrate, an n-type semiconductor layer that is formed on the substrate, is formed of an n-type semiconductor material, and has a core that is a defect concentration region, an active layer that is formed on the n-type semiconductor layer, and a p-type semiconductor layer that is formed on the active layer and is formed of a p-type semiconductor material, and has a recessed portion formed from a surface of the p-type semiconductor layer to have a depth reaching the core and an ion implantation region that is formed by implanting ions into a region including the core.

2 . The semiconductor laser element according to claim 1 , wherein
the stacked body has a side surface including an end surface of the n-type semiconductor layer, the core is exposed to the side surface, and the recessed portion is provided between the surface and the side surface to separate the side surface from the surface.

3 . The semiconductor laser element according to claim 2 , wherein
a ridge portion that extends in a direction parallel to the surface is provided in the p-type semiconductor layer, and the recessed portion may extend in a direction parallel to the ridge portion.

4 . The semiconductor laser element according to claim 1 , further comprising
an insulation layer formed on the surface and an inner peripheral surface of the recessed portion, in which the ion implantation region is covered by the insulation layer.

5 . The semiconductor laser element according to claim 1 , wherein
the substrate is a c-plane GaN substrate, the c-plane GaN substrate being a substrate that is formed of n-type GaN and has a main surface parallel to a c-plane of a GaN crystal, and the n-type semiconductor layer, the active layer, and the p-type semiconductor layer are formed by crystal growth on the c-plane GaN substrate.

6 . The semiconductor laser element according to claim 1 , wherein
the ions are boron ions, nitrogen ions, or protons, and a dose amount of the ions is 2 × 10 13 cm -2 or more and 2 × 10 15 cm -2 or less.

7 . A method of producing a semiconductor laser element, comprising:
preparing a stacked body that includes a substrate, an n-type semiconductor layer that is formed on the substrate, is formed of an n-type semiconductor material, and has a core that is a defect concentration region, an active layer that is formed on the n-type semiconductor layer, and a p-type semiconductor layer that is formed on the active layer and is formed of a p-type semiconductor material; forming, by etching, a recessed portion formed from a surface of the p-type semiconductor layer to have a depth reaching the core; and Implanting ions into a region of the stacked body including the core.

Assignees

• Sony Group Corp

Inventors

• Kikuchi Yuichiro
• Hoshina Yukio
• Watanabe Hideki
• Isozaki Yuta
• Kawanishi Hidekazu
• Murayama Masahiro
• Sugiyama Takashi

Classifications

• H01S5/34386

  explicitly Al-free · CPC title

• H01S5/0206 Primary

  Substrates, e.g. growth, shape, material, removal or bonding; (specific crystal orientation H01S5/3202) · CPC title

• H01S5/34333

  with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser · CPC title

• H01S5/0234

  Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings · CPC title

• H01S5/22 Primary

  having a ridge or stripe structure · CPC title