Extreme ultraviolet mask with capping layer

Patent metadata

Field	Value
Publication number	US-2023161241-A1
Application number	US-202217749033-A
Country	US
Kind code	A1
Filing date	May 19, 2022
Priority date	Nov 23, 2021
Publication date	May 25, 2023
Grant date	—

Abstract

An extreme ultraviolet (EUV) mask, includes a substrate, a reflective multilayer stack on the substrate, and a single layer or multi-layer capping feature on the reflective multilayer stack. The capping feature includes a capping layer or capping layers including a material having an amorphous structure. Other described embodiments include capping layer(s) that contain element(s) having a first solid carbon solubility less than about 3. In multilayer capping feature embodiments, element(s) of the respective capping layers have different solid carbon solubility properties.

First claim

What is claimed is:

1 . An extreme ultraviolet (EUV) mask, comprising:
a substrate; a reflective multilayer stack on the substrate; a capping feature on the reflective multilayer stack, the capping feature including a first capping layer including a material having an amorphous structure; and a patterned absorber layer on the capping feature.

2 . The EUV mask of claim 1 , wherein the amorphous structure includes a nano-crystalline structure having a grain size of less than 5 nanometers.

3 . The EUV mask of claim 1 , wherein the amorphous structure includes a nano-crystalline structure having a grain size of less than 2 nanometers.

4 . The EUV mask of claim 1 , wherein the capping feature further comprises a second capping layer including a material having an amorphous structure, the material of the second capping layer being different from the material of the first capping layer.

5 . The EUV mask of claim 4 , wherein the material of the first capping layer includes an element having an EUV extinction coefficient for EUV radiation having a wavelength of 13.5 nm that is different from an EUV extinction coefficient for EUV radiation having a wavelength of 13.5 nm of an element of the material of the second capping layer.

6 . The EUV mask of claim 5 , wherein the EUV extinction coefficient for EUV radiation having a wavelength of 13.5 nm of the element of the material of the first capping layer is between 0 and 0.1.

7 . The EUV mask of claim 5 , wherein the EUV extinction coefficient for EUV radiation having a wavelength of 13.5 nm of the element of the material of the second capping layer is between 0 and 0.1.

8 . The EUV mask of claim 4 , wherein the material of the first capping layer includes an element having a solid carbon solubility, at an eutectic point of a system containing the element and carbon, that is less than 3 atomic %.

9 . The EUV mask of claim 4 , wherein material of the second capping layer includes an element having a solid carbon solubility, at an eutectic point of a system containing the element and carbon, that is less than 3 atomic %.

10 . The EUV mask of claim 1 , wherein the material of the first capping layer is selected from alloys containing one or more elements selected from Rh, Ir, Pt, Au and Zr.

11 . The EUV mask of claim 4 , wherein the material of the second capping layer is selected from alloys containing one or more elements selected from Rh, Ir, Pt, Au and Zr or alloys thereof.

12 . The EUV mask of claim 10 , wherein the alloy of the first capping layer further includes Hf, Nb or N.

13 . The EUV mask of claim 11 wherein the alloy of the second capping layer further includes Hf, Nb or N.

14 . A method of using an EUV mask, the method comprising:
exposing the EUV mask to an incident radiation, the EUV mask including:
a substrate;
a reflective multilayer stack on the substrate;
a multi-layer capping feature on the reflective multilayer stack, the multi-layer capping feature including a first capping layer including a Rh, Ir, Pt, Au or Zr containing first alloy and a second capping layer including a Rh, Ir, Pt, Au or Zr containing second alloy different from the first alloy; and
a patterned absorber layer on the multi-layer capping feature;
absorbing a portion of the incident radiation in the patterned absorber layer; transmitting a portion of the incident radiation through the first capping layer and the second capping layer; reflecting a portion of the incident radiation from the reflective multilayer stack; and directing a portion of the incident radiation that is reflected by the reflective multilayer stack to a material to be patterned.

15 . The method of claim 14 , wherein the first alloy and the second alloy are selected from RuZr, IrZr, RhZr, HfZr and NbZr, wherein Zr content of the first alloy and the second alloy is at least 5 atomic %.

16 . The method of claim 14 , wherein the first alloy and the second alloy are selected from RuRh, RuIr, RuPt, PtIr, RuIrPt, NbIr, NbPt, NbRh, RhN, IrN, RuRhN, RuIrN, RuPtN, PtIrN, RuIrPtN, NbIrN, NbPtN and NbRhN.

17 . A patterning method, comprising:
exposing a EUV mask to an incident radiation, the EUV mask including:
a substrate;
a reflective multilayer stack on the substrate;
a capping feature on the reflective multilayer stack, the capping feature including a material including an element having a solid carbon solubility, at an eutectic point of a system of the element and carbon, that is less than 3 atomic %; and
a patterned absorber layer on the capping feature;
absorbing a portion of the incident radiation in the patterned absorber layer; absorbing an amount of the incident radiation in the capping feature; reflecting a portion of the incident radiation from the reflective multilayer stack; and directing a portion of the incident radiation that is reflected by the reflective multilayer stack to a material to be patterned.

18 . The method of claim 17 , wherein the material of the capping feature includes RuZr, IrZr, RhZr, HfZr or NbZr, wherein Zr content is at least 5 atomic %.

19 . The method of claim 17 , wherein the material of the capping is an alloy selected from RuRh, RuIr, RuPt, PtIr, RuIrPt, NbIr, NbPt, NbRh, RhN, IrN, RuRhN, RuIrN, RuPtN, PtIrN, RuIrPtN, NbIrN, NbPtN and NbRhN.

20 . The method of claim 17 , wherein the solid carbon solubility at the eutectic point is less than 2 atomic %.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Lee Hsin-Chang
• Hsu Pei-Cheng
• Lee Wei-Hao
• Lin Ping-Hsun
• Lien Ta-Cheng
• Yu Ching-Fang

Classifications

• G03F1/22

  Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof · CPC title

• G03F1/24 Primary

  Reflection masks; Preparation thereof · CPC title

• G03F1/48 Primary

  Protective coatings · CPC title