BiSb Topological Insulator with Seed Layer or Interlayer to Prevent Sb Diffusion and Promote BiSb (012) Orientation

Patent metadata

Field	Value
Publication number	US-2023027086-A1
Application number	US-202217954679-A
Country	US
Kind code	A1
Filing date	Sep 28, 2022
Priority date	Apr 28, 2020
Publication date	Jan 26, 2023
Grant date	—

Abstract

A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a seed layer over the substrate, and a bismuth antimony (BiSb) layer having (0120) orientation on the seed layer. The seed layer includes a silicide layer and a surface control layer. The silicide layer includes a material of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, or combinations thereof. The surface control layer includes a material of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoM, CoNiM, CoNi, NiSi, CoSi, NiCoSi, Cu, CuAgM, CuM, or combinations thereof, in which M is Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, or Si.

First claim

What is claimed is:

1 . A spin-orbit torque (SOT) device, comprising:
a seed layer comprising:
a surface control layer comprising a material selected from a group consisting of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoM, CoNiM, CoNi, NiSi, CoSi, NiCoSi, Cu, CuAgM, CuM, and combinations thereof, wherein M is selected from a group consisting of Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, and Si; and
a bismuth antimony (BiSb) layer disposed on the surface control layer, the BiSb layer having a (012) orientation.

2 . The SOT device of claim 1 , wherein the seed layer further comprises a silicide layer comprising a material selected from a group consisting of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, and combinations thereof.

3 . The SOT device of claim 2 , wherein the silicide layer comprises one or more stacks of a laminate comprising a silicon layer and a metal layer, the metal layer comprising a material selected from a group consisting of Ni, NiFe, NiFeTa, NiCu, Co, CoFe, CoFeTa, CoCu, and combinations thereof.

4 . The SOT device of claim 3 , wherein the silicide layer comprises one to four stacks of the laminate, and wherein the silicide layer has a thickness from about 1 Å to about 30 Å.

5 . The SOT device of claim 1 , wherein the surface control layer has a thickness from about 1 Å to about 20 Å.

6 . The SOT device of claim 1 , wherein the surface control layer comprises a first layer and a second layer disposed between the first layer and the BiSb layer,
wherein the first layer comprises a material selected from a group consisting of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuAg, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoCu, and combinations thereof, in which M is selected from a group consisting of Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, and Si, and wherein the second layer comprises a material selected from a group consisting of CoNi, NiSi, CoSi, NiCoSi, CuAgNi, CuM, CuNiM, Ni, CoCu, Cu, Co, NiCu, and combinations thereof, in which M is selected from a group consisting of Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, and Si.

7 . The SOT device of claim 1 , wherein the surface control layer has a fcc(111) orientation or an hcp(002) orientation.

8 . A magnetic media drive, comprising the SOT device of claim 1 .

9 . A magnetoresistive random access memory device, comprises the SOT device of claim 1 .

10 . A magnetic recording write head, comprising the SOT device of claim 1 .

11 . A spin-orbit torque (SOT) device, comprising:
a bismuth antimony (BiSb) layer, the BiSb layer having a (012) orientation, and an interlayer on the BiSb layer, the interlayer comprising:
a silicide layer comprising a material selected from a group consisting of NiSi, FeSi, CoSi, NiCuSi, NiFeTaSi, CoCuSi, and combinations thereof.

12 . The SOT device of claim 11 , wherein the silicide layer has a thickness from about 1 Å to about 30 Å.

13 . The SOT device of claim 11 , wherein the silicide layer comprises one or more stacks of a laminate, the laminate comprising a silicon layer and a metal layer, the metal layer comprising a material selected from a group consisting of Ni, Fe, Co, NiCu, NiFeTa, CoCu, NiFe, NiFeCu, Cu, and combinations thereof.

14 . The SOT device of claim 13 , wherein the silicide layer comprises one to four stacks of the laminate.

15 . The SOT device of claim 11 , wherein the interlayer further comprises a surface control layer between the BiSb layer and the silicide layer, the surface control layer comprising a material selected from a group consisting of Cu, Ni, NiFe, Fe, Co, NiCu, NiFeTa, CoCu, NiFeCu, and combinations thereof.

16 . The SOT device of claim 11 , further comprising:
a seed layer disposed in contact with the BiSb layer; and a spin torque layer (STL) disposed over the interlayer.

17 . The SOT device of claim 11 , further comprising:
a seed layer disposed in contact with the BiSb layer; and a perpendicular magnetic anisotropy (PMA) ferromagnetic layer disposed over the interlayer.

18 . The SOT device of claim 11 , further comprising:
a seed layer disposed in contact with the BiSb layer; and a cap layer disposed over the interlayer.

19 . A magnetic media drive, comprising the SOT device of claim 11 .

20 . A magnetoresistive random access memory device, comprises the SOT device of claim 11 .

21 . A magnetic recording write head, comprising the SOT device of claim 11 .

22 . A spin-orbit torque (SOT) device, comprising:
a bismuth antimony (BiSb) layer, the BiSb layer having a (012) orientation, and an interlayer disposed on the BiSb layer, the interlayer comprising:
an amorphous film comprising a material with a nearest neighbor peak d-spacing matching a spacing selected from a group consisting of:
a (111) d-spacing of an fcc lattice with an a-axis in the range of 3.54 Å to 3.78 Å, and
a (002) d-spacing of an hcp lattice with an a-axis in the range of 2.52 Å to 2.68 Å.

23 . The SOT device of claim 22 , wherein the interlayer further comprises a silicide layer comprising a material selected from a group consisting of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, and combinations thereof.

24 . The SOT device of claim 22 , further comprising a seed layer disposed in contact with the BiSb layer, the seed layer comprising:
an amorphous film, the amorphous film comprising:
a material with a nearest neighbor peak d-spacing matching a spacing selected from a group consisting of:
a (111) d-spacing of an fcc lattice with an a-axis in the range of 3.54 Å to 3.78 Å, and
a (002) d-spacing of an hcp lattice with an a-axis in the range of 2.52 Å to 2.68 Å; and

one or more stacks of a laminate, each stack of laminate comprising:
a silicon layer comprising a material selected from a group consisting of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, and combinations thereof, and
a metal layer comprising a material selected from a group consisting of Ni, NiFe, NiFeTa, NiCu, Co, CoFe, CoFeTa, CoCu, and combinations thereof.

25 . The SOT device of claim 24 , further comprising:
a free perpendicular magnetic anisotropy (PMA) ferromagnetic layer disposed over the interlayer; and a reference PMA ferromagnetic layer disposed over the free PMA ferromagnetic layer.

26 . The SOT device of claim 24 , further comprising:
a spin torque layer (STL) disposed over the interlayer; and a pinning layer disposed over the STL.

27 . A magnetic media drive, comprising the SOT device of claim 22 .

28 . A magnetoresistive random access memory device, comprises the SOT device of claim 22 .

29 . A magnetic recording write head, comprising the SOT device of claim 22 .

Assignees

• Western Digital Tech Inc

Inventors

• Le Quang
• Hwang Cherngye
• York Brian R
• Chen Andrew
• Nguyen Thao A
• Ahn Yongchul
• Liu Xiaoyong
• Jiang Hongquan
• Gao Zheng
• Ho Kuok San

Classifications

• H01L43/10

  Electricity · mapped topic

• H01L43/04 Primary

  Electricity · mapped topic

• H01F10/3254

  the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ] · CPC title

• H01L27/222

  Electricity · mapped topic

• H01F10/3272

  by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets · CPC title