Semiconductor device
US-2019051797-A1 · Feb 14, 2019 · US
Laminate and semiconductor device
US2022393073A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2022393073-A1 |
| Application number | US-202017775115-A |
| Country | US |
| Kind code | A1 |
| Filing date | Nov 2, 2020 |
| Priority date | Nov 8, 2019 |
| Publication date | Dec 8, 2022 |
| Grant date | — |
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Abstract
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A stacked body may include a support, a buffer layer, and an electrode layer, in this order, wherein the buffer layer may include one or more metals selected from the group consisting of Ga, Al, In, and Zn, and oxygen, the electrode layer comprises an oxide of magnesium and an oxide of zinc, and the electrode layer has a half width of a diffraction peak observed at 2θ=34.8±0.5 deg in X-ray diffraction measurement of 0.43 deg or smaller.
First claim
Opening claim text (preview).
1 . A stacked body, comprising, in this order, a support; a buffer layer; and an electrode layer wherein the buffer layer comprises (i) oxygen and (ii) Ga, Al, In, and/or Zn, wherein the electrode layer comprises an oxide of magnesium and an oxide of zinc, and wherein the electrode layer has a half width of a diffraction peak observed at 2θ=34.8±0.5 deg in X-ray diffraction measurement of 0.43 deg or smaller. 2 . The stacked body of claim 1 , wherein a stacked unit comprising the electrode layer and the buffer layer has a conductivity of 0.5 S/cm or larger. 3 . The stacked body of claim 1 , wherein a molar ratio of Mg to the sum of Mg and Zn [Mg/(Mg+Zn)] in the electrode layer is 0.25 or more 0.75 or less. 4 . The stacked body of claim 1 , wherein the stacked unit comprising the electrode layer and the buffer layer has a light transmittance at a wavelength of 260 nm of 4% or more. 5 . The stacked body of claim 1 , wherein the electrode layer has a degree of c-axis orientation of 40% or more. 6 . The stacked body of claim 1 , wherein the buffer layer comprises an oxide of zinc. 7 . The stacked body of claim 1 , wherein the buffer layer comprises an oxide of gallium and an oxide of zinc. 8 . The stacked body of claim 1 , wherein a molar ratio of Ga to a sum of Ga and Zn [Ga/(Ga+Zn)] in the buffer layer is 0.000 or more and 0.2 or less. 9 . The stacked body of claim 1 , wherein the support comprises an ultraviolet transmitting member. 10 . The stacked body of claim 1 , wherein the support comprises a semiconductor layer. 11 . The stack body of claim 10 , wherein the semiconductor layer comprises a Group III-V nitride semiconductor. 12 . The stacked body of claim 10 , wherein the semiconductor layer comprises AlN, GaN, InN, or a mixed crystal thereof. 13 . A semiconductor device, comprising: the stacked body of claim 1 . 14 . The stacked body of claim 1 , wherein a metal of the buffer layer is at least one selected from the group consisting of Ga, Al, In, and Zn.
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
- H01L33/42Primary
Electricity · mapped topic
containing nitrogen, e.g. GaN · CPC title
- H10H20/833Primary
Transparent materials · CPC title
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- What does patent US2022393073A1 cover?
- A stacked body may include a support, a buffer layer, and an electrode layer, in this order, wherein the buffer layer may include one or more metals selected from the group consisting of Ga, Al, In, and Zn, and oxygen, the electrode layer comprises an oxide of magnesium and an oxide of zinc, and the electrode layer has a half width of a diffraction peak observed at 2θ=34.8±0.5 deg in X-ray diff…
- Who is the assignee on this patent?
- Idemitsu Kosan Co, National Univ Corporation Tokai National Higher Education And Research System, Nikkiso Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H01L33/42. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Dec 08 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).