Light-emitting device

Patent metadata

Field	Value
Publication number	US-2017005230-A1
Application number	US-201615199152-A
Country	US
Kind code	A1
Filing date	Jun 30, 2016
Priority date	Jun 30, 2015
Publication date	Jan 5, 2017
Grant date	—

Abstract

Device successively including a substrate including a metal layer capable of reflecting a radiation; a first layer of a III/N type alloy, p-type doped, and including a first surface, opposite the metal layer, the first surface being provided with cavities; a light-emitting layer made of a III/N-type alloy, capable of generating the radiation; a second layer of a III/N-type alloy, n-type doped, having the radiation coming out therethrough; wherein a non-metallic filling material transparent in the spectral range is arranged within the cavities.

First claim

1 . A light-emitting device for emitting a radiation in a spectral range, successively including:
a substrate including a metal layer capable of reflecting the radiation; a first layer of a III/N type alloy, p-type doped, and comprising a first surface, opposite the metal layer, the first surface being provided with cavities; a light-emitting layer of a III/N-type alloy, capable of generating the radiation; a second layer of a III/N-type alloy, n-type doped, having the radiation coming out therethrough;
wherein a filling material, non-metallic and transparent in the spectral range, is arranged within the cavities.

2 . The device according to claim 1 , wherein the filling material forms a planar layer extending between the metal layer and the first surface of the first layer, and the filling material is electrically conductive.

3 . The device according to claim 2 , wherein the filling material is an oxide, preferably selected from the group comprising indium-tin oxide, aluminum-doped zinc oxide ZnO, indium-doped zinc oxide ZnO, gallium-doped zinc oxide ZnO.

4 . The device according to claim 1 , wherein the filling material is flush with the first surface of the first layer, and wherein the first surface of the first layer is in contact with the metal layer.

5 . The device according to claim 4 , wherein the filling material is selected from the group comprising titanium dioxide TiO 2 , silicon dioxide SiO 2 , zinc oxide ZnO, aluminum-doped zinc oxide ZnO, indium-doped zinc oxide ZnO, gallium-doped zinc oxide ZnO, silicon nitride SiN, indium tin oxide.

6 . The device according to claim 1 , wherein the filling material forms dielectric balls, and wherein the first surface of the first layer is in contact with the metal layer.

7 . The device according to claim 6 , wherein the filling material is selected from the group comprising titanium dioxide TiO 2 , silicon nitride SiN, silicon dioxide SiO 2 , zinc oxide ZnO.

8 . The device according to claim 1 , wherein the metal layer is based on silver or on aluminum.

9 . The device according to claim 1 , wherein the alloy of the first and second layers and of the light-emitting layer is a binary alloy based on GaN, or a ternary alloy based on InGaN or on AlGaN.

10 . The device according to claim 1 , wherein the cavities have a surface density greater than 10 8 cm −2 at the first surface of the first layer.

Assignees

• Commissariat à l'Energie Atomique et aux Energies Alternatives

Inventors

• Desieres Yohan

Classifications

• H10H20/833

  Transparent materials · CPC title

• H10H20/831

  characterised by their shape · CPC title

• H10H20/821

  of the light-emitting regions, e.g. non-planar junctions · CPC title

• H10H20/819 Primary

  characterised by their shape, e.g. curved or truncated substrates · CPC title

• H10H20/818

  within the light-emitting regions · CPC title