Cvd device pumping liner

Patent metadata

Field	Value
Publication number	US-2022356574-A1
Application number	US-202217869706-A
Country	US
Kind code	A1
Filing date	Jul 20, 2022
Priority date	Sep 13, 2019
Publication date	Nov 10, 2022
Grant date	—

Abstract

Pumping liners for use in an apparatus for depositing a material on a work piece by chemical vapor deposition includes a plurality of unevenly spaced apertures are disclosed. Uneven spacing of the plurality of apertures produces a uniform flow of processing gases within a processing chamber with which the pumping liner is associated. Films of materials deposited onto a work piece by chemical vapor deposition techniques using disclosed pumping liners exhibit desirable properties such as uniform thickness and smooth and uniform surfaces.

First claim

1 . A method of depositing a material on a work piece by chemical vapor deposition, the method comprising:
positioning the work piece within a processing chamber; flowing a processing gas to the processing chamber; depositing the material on the work piece; flowing the processing gas through a plurality of apertures extending through a pumping liner, a spacing between adjacent apertures of the plurality of apertures being unequal; and flowing the processing gas through an outlet port of the processing chamber.

2 . The method of claim 1 , wherein the processing gas includes one or more gases chosen from silane, tetramethyl silane, argon and oxygen.

3 . The method of claim 1 , wherein the plurality of apertures are round.

4 . The method of claim 1 , wherein the plurality of apertures comprise a plurality of aperture pairs comprising adjacent apertures, the adjacent apertures of each aperture pair being spaced apart a distance measured along an inner circumferential surface of the pumping liner, the distance between adjacent apertures of the plurality of aperture pairs being unequal.

5 . The method of claim 1 , wherein the plurality of aperture pairs includes a first aperture pair closer to the outlet port than a second aperture pair, the distance for the first aperture pair being greater than the distance for the second aperture pair.

6 . The method of claim 5 , wherein the distance between adjacent apertures of an aperture pair decreases at a regular interval as a distance, measured along the inner circumferential surface of the pumping liner, between the respective aperture pair and the outlet port increases.

7 . The method of claim 1 , wherein the plurality of apertures is 35 to 65 apertures.

8 . The method of claim 1 , wherein the apertures have a diameter ranging between 4 mm to 7 mm.

9 . A method of depositing a material on a work piece by chemical vapor deposition, the method comprising:
positioning the work piece within a processing chamber; flowing a processing gas to the processing chamber; depositing the material on the work piece; flowing the processing gas through a plurality of apertures extending through a pumping liner, the pumping liner defining a circumferential body having the plurality of apertures, disposed entirely around the circumferential body, through which gas within the processing chamber is exhausted from the processing chamber, the plurality of apertures having a circular cross section of the same diameter, the circumferential body including an inner circumferential surface, an outer circumferential surface, an upper surface and a lower surface, wherein the plurality of apertures are tilted relative to the upper surface, are tilted relative to the lower surface and extend through the body from the inner circumferential surface to the outer circumferential surface, the plurality of apertures comprising a plurality of aperture pairs, each aperture pair comprising adjacent apertures, the adjacent apertures of each aperture pair being spaced apart a distance measured along the inner circumferential surface; and flowing the processing gas which has passed through the plurality of apertures through an outlet port of the processing chamber, wherein the plurality of aperture pairs includes a first aperture pair closer to the exhaust port than a second aperture pair, the distance for the first aperture pair being less than the distance for the second aperture pair.

10 . The method of claim 9 , wherein the distance between adjacent apertures of an aperture pair increases at an irregular interval as a distance, measured along the inner circumferential surface, between the respective aperture pair and the exhaust port increases.

11 . The method of claim 10 , wherein a pitch between the adjacent apertures of the first aperture pair is X degrees (°) and a pitch between the adjacent apertures of the second aperture pair, adjacent to the first aperture pair, is X° plus 0.05° to 0.5°.

12 . The method of claim 9 , wherein the processing gas includes one or more gases chosen from silane, tetramethyl silane, argon and oxygen.

13 . The method of claim 9 , wherein the same diameter of the apertures is between 4 and 7 mm.

14 . The method of claim 9 , where the plurality of apertures is 35 to 65 apertures.

15 . A method of depositing a material on a work piece by chemical vapor deposition, the method comprising:
positioning the work piece within a processing chamber; flowing a processing gas to the processing chamber; depositing the material on the work piece; flowing the processing gas through a plurality of apertures extending through a pumping liner, the plurality of apertures including a first aperture, a second aperture and a third aperture, at least one of the first, second and third aperture includes a portion having a cross section of a first polygonal shape and a portion having a cross section of a second polygonal shape different from the first polygonal shape and at least one of the first, second and third aperture has a circular cross section, each aperture tilted relative to the upper surface, each aperture tilted relative to the lower surface and each aperture extending through the body from the inner circumferential surface to the outer circumferential surface, the second aperture being intermediate the first aperture and the third aperture, the first aperture and the second aperture comprising a first aperture pair, a first distance measured along the outer circumferential surface separating the first aperture and the second aperture of the first aperture pair, the second aperture and the third aperture comprising a second aperture pair, a second distance measured along the outer circumferential surface separating the second aperture and the third aperture of the second aperture pair, the first distance being unequal to the second distance; and flowing the processing gas which has passed through the plurality of apertures through an outlet port of the processing chamber.

16 . The method of claim 15 , wherein first aperture pair is located closer to the outlet port than the second aperture pair and the first distance is less than the second distance.

17 . The method of claim 15 , wherein a pitch between the adjacent apertures of the first aperture pair is X degrees (°) and a pitch between the adjacent apertures of the second aperture pair, adjacent to the first aperture pair, is X° minus 0.1° to 0.4°.

18 . The method of claim 15 , wherein the first polygonal shape and the second polygonal shape are chosen from triangular, rectangular, pentagonal and hexagonal shapes

19 . The method of claim 18 , wherein the first polygonal shape is pentagonal and the second polygonal shape is hexagonal.

20 . The method of claim 15 , where the plurality of apertures is 35 to 65 apertures.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Yang Sheng-Chun
• Lin Yi-Ming
• Lee Chih-Tsung
• Chiu Yun-Tzu
• Wan Chao-Hung

Classifications

• H10P72/0468

  comprising a chamber adapted to a particular process · CPC title

• C23C16/4412 Primary

  Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps · CPC title

• C23C16/455 Primary

  characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber · CPC title

• C23C16/50

  using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)} · CPC title

• C23C16/45587

  Mechanical means for changing the gas flow · CPC title