System and method for modeling damages caused by incident particles

Patent metadata

Field	Value
Publication number	US-2022309216-A1
Application number	US-202117491739-A
Country	US
Kind code	A1
Filing date	Oct 1, 2021
Priority date	Mar 26, 2021
Publication date	Sep 29, 2022
Grant date	—

Abstract

A method of modeling damages to a crystal caused by an incident particle includes obtaining particle information and crystal information; estimating energy loss of the incident particle based on the particle information and the crystal information; estimating a volume of a vacancy based on the energy loss; estimating a vacancy reaction based on the crystal information and the volume of the vacancy; and generating output data based on the vacancy reaction, the output data including quantification data of the damages.

First claim

1 . A method of modeling damages to a crystal caused by an incident particle, the method comprising:
obtaining particle information and crystal information; estimating energy loss of the incident particle based on the particle information and on the crystal information; estimating a volume of a vacancy based on the energy loss; estimating a vacancy reaction based on the crystal information and on the volume of the vacancy; and generating output data based on the vacancy reaction, the output data including quantification data of the damages.

2 . The method of claim 1 , wherein the estimating of the volume of the vacancy includes:
estimating a first volume of the vacancy caused by the energy loss; estimating a second volume caused by diffusion of the vacancy; and calculating the volume of the vacancy based on a sum of the first volume and the second volume.

3 . The method of claim 2 , wherein the estimating of the first volume includes calculating the first volume based on a polynomial of the energy loss.

4 . The method of claim 3 , wherein the polynomial includes a 3 rd order polynomial of the energy loss.

5 . The method of claim 2 , wherein the estimating of the second volume includes calculating the second volume based on a diffusivity of the vacancy and on a lifetime of the vacancy.

6 . The method of claim 5 , wherein the calculating of the second volume includes calculating the second volume based on the equation:
Vol diffusion =A× (√{square root over ( D V ×τ lifetime )}) 3 ,
wherein Vol diffusion is the second volume, A is a constant, D V is the diffusivity of the vacancy, and τ lifetime is the lifetime of the vacancy.

7 . The method of claim 1 , wherein the estimating of the vacancy reaction includes:
obtaining an initial dopant concentration from the crystal information; calculating a first equilibrium constant based on the crystal information; and estimating a dopant concentration based on the initial dopant concentration, the volume of the vacancy, and the first equilibrium constant.

8 . The method of claim 1 , wherein the estimating of the vacancy reaction includes:
obtaining an initial dopant concentration from the crystal information; calculating a rate of change of a combination concentration of a dopant and the vacancy, the calculating the rate of change based on the initial dopant concentration and on the volume of the vacancy; and estimating a dopant concentration based on the initial dopant concentration and on the combination concentration of the dopant and the vacancy.

9 . The method of claim 1 , wherein the estimating of the vacancy reaction includes:
obtaining an initial impurity concentration from the crystal information; calculating a second equilibrium constant based on the crystal information; estimating a combination concentration of an impurity and the vacancy, the estimating the combination concentration based on the initial impurity concentration, the volume of the vacancy, and the second equilibrium constant; and calculating a trap concentration based on a sum of (A) a combined concentration of a dopant and the vacancy and (B) the combination concentration of the impurity and the vacancy.

10 . The method of claim 1 , wherein the estimating of the vacancy reaction includes:
extracting an initial impurity concentration from the crystal information; calculating a rate of change of a combination concentration of an impurity and the vacancy, the calculating the rate of change based on the initial impurity concentration and on the volume of the vacancy; and calculating a trap concentration based on a sum of (A) a combination concentration of a dopant and the vacancy and (B) the combination concentration of the impurity and the vacancy.

11 . (canceled)

12 . (canceled)

13 . A method of manufacturing an integrated circuit, the method comprising:
producing at least one mask based on design data, the design data verified based on the output data of claim 1 ; and manufacturing the integrated circuit using the at least one mask.

14 . A system comprising:
at least one processor; and a non-transitory storage medium storing instructions that, when executed by the at least one processor, cause the at least one processor to perform operations for modeling damages to a crystal caused by an incident particle, wherein the operations comprise, obtaining particle information and crystal information, estimating energy loss of the incident particle based on the particle information and on the crystal information, estimating a volume of a vacancy based on the energy loss, estimating a vacancy reaction based on the crystal information and on the volume of the vacancy, and generating output data based on the vacancy reaction, the output data including quantification data of the damages.

15 . The system of claim 14 , wherein the estimating the volume of the vacancy includes:
estimating a first volume of the vacancy caused by the energy loss; estimating a second volume caused by diffusion of the vacancy; and calculating the volume of the vacancy based on a sum of the first volume and the second volume.

16 . (canceled)

17 . (canceled)

18 . A method of modeling damages to a crystal caused by an incident particle, the method comprising:
obtaining particle information and crystal information; estimating energy loss of the incident particle based on the particle information and on the crystal information; and estimating a volume of a vacancy based on the energy loss, wherein the estimating of the volume of the vacancy includes, estimating a first volume of the vacancy caused by the energy loss, estimating a second volume caused by diffusion of the vacancy, and calculating the volume of the vacancy based on a sum of the first volume and the second volume.

19 . (canceled)

20 . The method of claim 18 , wherein the estimating of the second volume includes calculating the second volume based on a diffusivity of the vacancy and on a lifetime of the vacancy.

21 . The method of claim 18 , further comprising:
estimating a vacancy reaction based on the crystal information and on the volume of the vacancy; and generating output data based on the vacancy reaction, the output data including quantification data of the damages.

22 . The method of claim 21 , wherein the estimating of the vacancy reaction includes:
obtaining an initial dopant concentration from the crystal information; calculating a first equilibrium constant based on the crystal information; and estimating a dopant concentration based on the initial dopant concentration, the volume of the vacancy, and the first equilibrium constant.

23 . The method of claim 21 , wherein the estimating of the vacancy reaction includes:
obtaining an initial dopant concentration from the crystal information; calculating a rate of change of a combination concentration of a dopant and the vacancy based on the initial dopant concentration and the volume of the vacancy; and estimating a dopant concentration based on the initial dopant concentration and the combination concentration of the dopant and the vacancy.

24 . The method of claim 21 , wherein the estimating of the vacancy reaction includes:
obtaining an initial impurity concentration from the crystal information; calculating a second equilibrium constant based on the crystal information; estimating a combination concentration o

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Sangwoon
• Jeon Joohyun
• Kim Sungjin
• Kim Seunghyun
• Roh Wonki
• Park Chulwoo
• Byeon Seongjae
• An Taeyoon
• Jung Hyoeun

Classifications

• G06F30/39 Primary

  Circuit design at the physical level (physical level design for reconfigurable circuits G06F30/347) · CPC title

• H10P74/238

  comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement · CPC title

• G06F30/25 Primary

  using particle-based methods · CPC title

• G06F30/3308 Primary

  using simulation · CPC title

• H10P72/00

  Handling or holding of wafers, substrates or devices during manufacture or treatment thereof · CPC title