Method of processing stacked wafer

US2022301934A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2022301934-A1
Application numberUS-202217653773-A
CountryUS
Kind codeA1
Filing dateMar 7, 2022
Priority dateMar 22, 2021
Publication dateSep 22, 2022
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method of processing a stacked wafer including a first wafer and a second wafer stacked on a face side of the first wafer, includes positioning a focused spot of a laser beam inside the second wafer inwardly of two sides defining projected dicing lines, and applying the laser beam to the second wafer from an upper surface of the second wafer, thereby forming at least two strips of modified layers inside the second wafer along the projected dicing lines. A tape is affixed to the upper surface of the second wafer, and a projected dicing line is exposed by peeling off the tape from the upper surface of the second wafer to remove residuals of the second wafer that correspond to the projected dicing lines, thereby exposing the projected dicing lines on the face side of the first wafer.

First claim

Opening claim text (preview).

What is claimed is: 1 . A method of processing a stacked wafer including a first wafer and a second wafer stacked on a face side of the first wafer, the first wafer having a plurality of devices formed in respective areas on the face side that are demarcated by a plurality of intersecting projected dicing lines, the method comprising: a modified layer forming step of positioning a focused spot of a laser beam having a wavelength transmittable through the second wafer inside the second wafer inwardly of two sides defining each of the projected dicing lines, and applying the laser beam to the second wafer from an upper surface of the second wafer, thereby forming at least two strips of modified layers inside the second wafer along the projected dicing lines; a tape affixing step of affixing a tape to the upper surface of the second wafer; and a projected dicing line exposing step of peeling off the tape from the upper surface of the second wafer to remove residuals of the second wafer that correspond to the projected dicing lines and in which the modified layers are formed along the projected dicing lines from the second wafer, thereby exposing the projected dicing lines formed on the face side of the first wafer. 2 . The method of processing a stacked wafer according to claim 1 , wherein the tape affixing step includes an ultraviolet-curable tape affixing step of affixing an ultraviolet-curable tape whose adhesive power is lowered upon exposure to an ultraviolet radiation to the upper surface of the second wafer, and an ultraviolet radiation applying step of applying an ultraviolet radiation to other regions of the ultraviolet-curable tape than regions thereof corresponding to the projected dicing lines, thereby reducing adhesive power of the ultraviolet-curable tape in the other regions. 3 . The method of processing a stacked wafer according to claim 1 , wherein the tape used in the tape affixing step includes a thermocompression bonding tape containing polyolefin, and the tape affixing step includes a step of affixing the thermocompression bonding tape to the upper surface of the second wafer by heating and pressing the thermocompression bonding tape laid on the upper surface of the second wafer. 4 . The method of processing a stacked wafer according to claim 1 , further comprising: a thinning step of thinning the second wafer. 5 . The method of processing a stacked wafer according to claim 1 , further comprising: after the modified layer forming step, a thinning step of thinning the second wafer by grinding or polishing the upper surface of the second wafer.

Assignees

Inventors

Classifications

  • Wafer tapes, e.g. grinding or dicing support tapes · CPC title

  • Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

  • Package configurations · CPC title

  • H10P54/00Primary

    Cutting or separating of wafers, substrates or parts of devices · CPC title

  • used during dicing or grinding · CPC title

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What does patent US2022301934A1 cover?
A method of processing a stacked wafer including a first wafer and a second wafer stacked on a face side of the first wafer, includes positioning a focused spot of a laser beam inside the second wafer inwardly of two sides defining projected dicing lines, and applying the laser beam to the second wafer from an upper surface of the second wafer, thereby forming at least two strips of modified la…
Who is the assignee on this patent?
Disco Corp
What technology area does this patent fall under?
Primary CPC classification H10P54/00. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Sep 22 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).