Method for microstructure modification of conducting lines

Patent metadata

Field	Value
Publication number	US-2022293467-A1
Application number	US-202117197965-A
Country	US
Kind code	A1
Filing date	Mar 10, 2021
Priority date	Mar 10, 2021
Publication date	Sep 15, 2022
Grant date	—

Abstract

A method for microstructure modification of conducting lines is provided. An electroplating process is performed to deposit the metal thin film/conducting line(s) with a face-centered cubic (FCC) structure and a preferred crystallographic orientation over a surface of a substrate. The metal thin film/ conducting line(s) is subsequently subjected to a thermal annealing process to modify its microstructure with the grain sizes in a range of 5 μm to 100 μm. The thermal annealing process is conducted at the temperature of above 25 degrees Celsius and below 240 degrees Celsius.

First claim

1 . A method for microstructure modification of conducting lines, comprising:
performing an electroplating process to deposit a metal thin film with a preferred crystallographic orientation over a surface of a substrate; and performing a heat treatment on the metal thin film, to make the metal thin film having the crystal grain sizes in a range of 5 μm to 100 μm, wherein the heat treatment is conducted at a temperature in a range of above 25 degree Celsius and below 240 degree Celsius; wherein the metal thin film has a plurality of crystal grains with the preferred crystallographic orientation before the heat treatment is applied to the metal thin film and less than 50% of structure surface of the metal thin film can have the (111) crystal plane preferred orientation with a nanotwinned structure.

2 . The method for microstructure modification of conducting lines according to claim 1 , wherein the substrate comprises a conducting substrate, an insulating substrate or a combination thereof.

3 . The method for microstructure modification of conducting lines according to claim 1 , wherein the electroplating process is performed with a plating current density in a range of 0.1 ASD to 10.0 ASD.

4 . The method for microstructure modification of conducting lines according to claim 1 , wherein the metal thin film has a thickness in a range of 0.1 μm to 500 μm.

5 . The method for microstructure modification of conducting lines according to claim 1 , wherein a plating solution used in the electroplating process comprises organic acid, inorganic acid or a combination thereof.

6 . The method for microstructure modification of conducting lines according to claim 5 , wherein the plating solution comprises additives.

7 . The method for microstructure modification of conducting lines according to claim 1 , wherein the heat treatment is conducted for more than one minute and less than 50 hours.

8 . (canceled)

9 . (canceled)

10 . The method for microstructure modification of conducting lines according to claim 1 , wherein the material of the metal thin film comprises gold (Au), silver (Ag), copper (Cu), cobalt (Co), iron (Fe), nickel (Ni), lead (Pb), palladium (Pd), platinum (Pt) or a combination thereof.

Assignees

• Univ Yuan Ze

Inventors

• Ho Cheng En
• Lee Cheng Yu
• Lin Ping Chou
• Pan Chih Pin
• Chang Chih Hao

Classifications

• H10W72/90

  Bond pads, in general · CPC title

• H10W20/44

  Conductive materials thereof · CPC title

• H10W70/635

  Through-vias · CPC title

• H10W70/66

  Conductive materials thereof · CPC title

• H10W70/095

  of vias therein · CPC title