Pulsed DC Power For Deposition Of Film

Patent metadata

Field	Value
Publication number	US-2022285129-A1
Application number	US-202217684911-A
Country	US
Kind code	A1
Filing date	Mar 2, 2022
Priority date	Mar 2, 2021
Publication date	Sep 8, 2022
Grant date	—

Abstract

A vapor deposition system and methods of operation thereof are disclosed. The vapor deposition system includes a vacuum chamber; a dielectric target within the vacuum chamber, the dielectric target having a front surface and a thickness; a substrate support within the vacuum chamber, the substrate support having a front surface spaced from the front surface of the dielectric target to form a process gap; and a signal generator connected to the dielectric target to generate a plasma in the vacuum chamber, the signal generator comprises a power source, the power source configured to prevent charge accumulation in the dielectric target. The method includes applying power to a dielectric target within a vacuum chamber to generate a plasma in a process gap between the dielectric target and a substrate support and pulsing the power applied to the dielectric target to prevent charge accumulation.

First claim

What is claimed is:

1 . A vapor deposition apparatus comprising:
a vacuum chamber; a dielectric target within the vacuum chamber, the dielectric target having a front surface and a thickness; a substrate support within the vacuum chamber, the substrate support having a front surface spaced from the front surface of the dielectric target to form a process gap; and a signal generator connected to the dielectric target to generate a plasma in the vacuum chamber, the signal generator configured to prevent charge accumulation in the dielectric target.

2 . The apparatus of claim 1 , wherein the signal generator is configured to generate a pulsed DC waveform.

3 . The apparatus of claim 2 , wherein the pulsed DC waveform comprises a plurality of ON pulses and OFF pulses, each of the ON pulses having an ON time and each of the OFF pulses having an OFF time.

4 . The apparatus of claim 3 , wherein the pulsed DC waveform is generated at a frequency in a range of from 10 kHz to 500 kHz.

5 . The apparatus of claim 3 , wherein the pulsed DC waveform has a duty cycle in a range of from greater than 0 to less than 0.6.

6 . The apparatus of claim 1 , wherein the signal generator comprises a waveform generator operatively connected to a power supply.

7 . The apparatus of claim 3 , wherein the on voltage or the off voltage is in a range of from greater than 9 V to 1500 V.

8 . The apparatus of claim 3 , wherein the dielectric target comprises one or more of lead zirconate titanate (PZT), lead magnesium niobate-lead titanate (PMN-PT), aluminum oxide (Al 2 O 3 ) or lithium niobate (LiNbO 3 ).

9 . The apparatus of claim 3 , further comprising a reverse bias source operatively connected to the substrate support to apply a reverse bias to a substrate on the substrate support.

10 . The apparatus of claim 9 , wherein the reverse bias is applied in a range of from 0 V to 200 V.

11 . The apparatus of claim 9 , wherein the reverse bias source is a DC power.

12 . A method of depositing a dielectric film, the method comprising:
applying power to a dielectric target within a vacuum chamber to generate a plasma in a process gap between the dielectric target and a substrate support; and pulsing the power applied to the dielectric target to prevent charge accumulation.

13 . The method of claim 12 , wherein the power applied to the dielectric target is a pulsed DC power having a pulsed DC waveform.

14 . The method of claim 13 , wherein the pulsed DC waveform is generated at a frequency in a range of from 10 kHz to 500 kHz.

15 . The method of claim 13 , wherein the pulsed DC waveform has a duty cycle in a range of from greater than 0 to less than 0.6.

16 . The method of claim 13 , wherein the pulsed DC waveform has an ON time and an OFF time, each of the ON time and the OFF time independently having in a range of from 1 μs to 50 μs.

17 . The method of claim 13 , wherein the pulsed DC waveform has an ON voltage and an OFF voltage.

18 . The method of claim 17 , wherein the ON voltage is in the range of from greater than 9 V to 1500 V.

19 . The method of claim 12 , wherein the dielectric target comprises one or more of lead zirconate titanate (PZT), lead magnesium niobate-lead titanate (PMN-PT), aluminium oxide (Al 2 O 3 ) or lithium niobate (LiNbO 3 ).

20 . The method of claim 12 , further comprising applying a reverse bias to the substrate support, the reverse bias comprising a DC power.

Assignees

• Applied Materials Inc

Inventors

• Sangle Abhijeet Laxman
• Patil Nilesh
• Sharma Vijay Bhan
• Sivaramakrishnan Visweswaren

Classifications

• H10P14/69398

  the material having a perovskite structure, e.g. BaTiO3 · CPC title

• H10P14/69397

  the material containing two or more metal elements · CPC title

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P14/6329

  using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition · CPC title

• H10P72/0468

  comprising a chamber adapted to a particular process · CPC title