Laminate and method for producing same

US2022235468A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2022235468-A1
Application numberUS-202017595570-A
CountryUS
Kind codeA1
Filing dateJul 9, 2020
Priority dateJul 31, 2019
Publication dateJul 28, 2022
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A laminate including a metallic base material, a nickel-containing plating film layer formed on the metallic base material, and a gold plating film layer formed on the nickel-containing plating film layer, in which pinholes in the gold plating film layer are sealed with a passive film having a thickness of 15 nm or greater. Also disclosed is a constituent member of a semiconductor production device including the laminate and a method for producing the laminate.

First claim

Opening claim text (preview).

1 . A laminate comprising a metallic base material, a nickel-containing plating film layer formed on the metallic base material, and a gold plating film layer formed on the nickel-containing plating film layer, wherein pinholes in the gold plating film layer are sealed with a passive film having a thickness of 15 nm or greater. 2 . The laminate according to claim 1 , wherein the metallic base material comprises at least a metal selected from the group consisting of stainless steel, iron, aluminum, aluminum alloys, copper, and copper alloys. 3 . The laminate according to claim 1 , having a nickel strike layer between the metallic base material and the nickel-containing plating film layer. 4 . The laminate according to claim 1 , wherein the nickel-containing plating film layer comprises a nickel-phosphorus alloy plating layer (1) having a phosphorus concentration of 8% by mass or higher and lower than 10% by mass, and a nickel-phosphorus alloy plating layer (2) having a phosphorus concentration of 10% by mass or higher and 12% by mass or lower in this order from the metallic base material. 5 . The laminate according to claim 1 , wherein the gold plating film layer comprises a displacement gold plating film layer and a reduction gold plating film layer in this order from the nickel-containing plating film layer. 6 . A constituent member of a semiconductor production device, made up of the laminate according to claim 1 . 7 . A method for producing a laminate, comprising a step (A) of forming a nickel-containing plating film layer on a metallic base material, a step (B) of forming a gold plating film layer on the nickel-containing plating film layer, and a sealing treatment step (C) of forming a passive film having a thickness of 15 nm or greater on pinholes in the gold plating film layer. 8 . The method for producing a laminate according to claim 7 , wherein the sealing treatment step (C) is performed in an atmosphere in which an oxygen gas concentration is 50% by volume or higher and a temperature is 140° C. to 200° C. 9 . The method for producing a laminate according to claim 7 , wherein the metallic base material comprises at least a metal selected from the group consisting of stainless steel, iron, aluminum, aluminum alloys, copper, and copper alloys. 10 . The method for producing a laminate according to claim 7 , comprising a step of subjecting the metallic base material to a nickel strike treatment under the condition of a current density of 5 to 20 A/dm 2 before the step (A). 11 . The method for producing a laminate according to claim 7 , wherein the step (A) comprises a step (a1) of forming the nickel-phosphorus alloy plating layer (1) having a phosphorus concentration of 8% by mass or higher and lower than 10% by mass, and a step (a2) of forming the nickel-phosphorus alloy plating layer (2) having a phosphorus concentration of 10% by mass or higher and 12% by mass or lower after the step (a1). 12 . The method for producing a laminate according to claim 7 , wherein the step (B) comprises a step (b1) of forming a displacement gold plating film layer, and a step (b2) of forming a reduction gold plating film layer after the step (b1).

Assignees

Inventors

Classifications

  • of nickel or cobalt · CPC title

  • Contact plating, i.e. electroless electrochemical plating · CPC title

  • using reducing agents · CPC title

  • using hypophosphites · CPC title

  • by chemical pretreatment · CPC title

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What does patent US2022235468A1 cover?
A laminate including a metallic base material, a nickel-containing plating film layer formed on the metallic base material, and a gold plating film layer formed on the nickel-containing plating film layer, in which pinholes in the gold plating film layer are sealed with a passive film having a thickness of 15 nm or greater. Also disclosed is a constituent member of a semiconductor production de…
Who is the assignee on this patent?
Showa Denko Kk
What technology area does this patent fall under?
Primary CPC classification C23C28/021. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Thu Jul 28 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).