Method and apparatus for preparing coated particles
US-2016369405-A1 · Dec 22, 2016 · US
US2022227104A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2022227104-A1 |
| Application number | US-202017614172-A |
| Country | US |
| Kind code | A1 |
| Filing date | Aug 11, 2020 |
| Priority date | Sep 13, 2019 |
| Publication date | Jul 21, 2022 |
| Grant date | — |
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A laminate including a metallic base material, a first nickel-containing plating film layer formed on the metallic base material, a gold plating film layer formed on the first nickel-containing plating film layer, a second nickel-containing plating film layer formed on the gold plating film layer, and a nickel fluoride film layer formed on the second nickel-containing plating film layer. Also disclosed is a method for producing the laminate as well as a constituent member of a semiconductor production device including the laminate.
Opening claim text (preview).
1 . A laminate comprising a metallic base material, a first nickel-containing plating film layer formed on the metallic base material, a gold plating film layer formed on the first nickel-containing plating film layer, a second nickel-containing plating film layer formed on the gold plating film layer, and a nickel fluoride film layer formed on the second nickel-containing plating film layer. 2 . The laminate according to claim 1 , wherein pinholes in the gold plating film layer are sealed with a metal which is a nickel simple substance, and pinholes in the first and second nickel-containing plating film layers are sealed with a metal which is a gold simple substance. 3 . The laminate according to claim 1 , wherein the metallic base material comprises at least one metal selected from the group consisting of stainless steel, iron, aluminum, aluminum alloys, copper, and copper alloys. 4 . The laminate according to claim 1 , having a nickel strike layer between the metallic base material and the first nickel-containing plating film layer, and between the gold plating film layer and the second nickel-containing plating film layer. 5 . The laminate according to claim 1 , wherein the first nickel-containing plating film layer comprises a nickel-phosphorus alloy plating layer having a phosphorus concentration of 8% by mass or higher and lower than 10% by mass, and the second nickel-containing plating film layer comprises a nickel-phosphorus alloy plating layer having a phosphorus concentration of 10% by mass or higher and 12% by mass or lower. 6 . The laminate according to claim 1 , wherein the gold plating film layer comprises a displacement gold plating film layer and a reduction gold plating film layer in this order from the first nickel-containing plating film layer. 7 . The laminate according to claim 1 , wherein the nickel fluoride film layer has a thickness of 70 nm or greater. 8 . A method for producing a laminate, comprising a step (A) of forming a first nickel-containing plating film layer on a metallic base material, a step (B) of forming a gold plating film layer on the first nickel-containing plating film layer, a step (C) of forming a second nickel-containing plating film layer on the gold plating film layer, and a step (D) of forming a nickel fluoride film layer on the second nickel-containing plating film layer. 9 . The method for producing a laminate according to claim 8 comprising a step (X) between the step (C) and the step (D), wherein the laminate obtained in the step (C) is subjected to a heat treatment under the condition of a temperature being 250° C. or higher in order to seal pinholes in the gold plating film layer with a metal which is a nickel simple substance and seal pinholes in the first and second nickel-containing plating film layers with a metal which is a gold simple substance. 10 . The method for producing a laminate according to claim 8 , wherein the step (D) is performed in an atmosphere in which a fluorine gas concentration is 8% by volume or higher and a temperature is 250° C. or higher. 11 . The method for producing a laminate according to claim 8 , comprising a step of subjecting the metallic base material to a nickel strike treatment under the condition of a current density of 3 to 20 A/dm 2 before the step (A) and before the step (C). 12 . The method for producing a laminate according to claim 8 , wherein the step (A) comprises a step of forming a nickel-phosphorus alloy plating layer having a phosphorus concentration of 8% by mass or higher and lower than 10% by mass, and the step (C) comprises a step of forming a nickel-phosphorus alloy plating layer having a phosphorus concentration of 10% by mass or higher and 12% by mass or lower. 13 . The method for producing a laminate according to claim 8 , wherein the step (B) comprises a step (b1) of forming a displacement gold plating film layer, and a step (b2) of forming a reduction gold plating film layer after the step (b1). 14 . A constituent member of a semiconductor production device, made up of the laminate according to claim 1 .
only one element being applied · CPC title
Pretreatment of the material to be coated (C23C8/04 takes precedence) · CPC title
Heat-treatment · CPC title
Contact plating, i.e. electroless electrochemical plating · CPC title
Coating with noble metals · CPC title
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