Semiconductor device

Patent metadata

Field	Value
Publication number	US-2022223544-A1
Application number	US-202217708525-A
Country	US
Kind code	A1
Filing date	Mar 30, 2022
Priority date	Oct 4, 2019
Publication date	Jul 14, 2022
Grant date	—

Abstract

In a semiconductor device, a semiconductor element has a front electrode and a back electrode. The back electrode is connected to a wiring member through a bonding member. Wire pieces are disposed in the bonding member, and bonded to a bonding surface of the wiring member to protrude toward the semiconductor element. The bonding member has, in a plan view, a central region that overlaps with a central portion of the semiconductor element including an element center, and an outer peripheral region that includes a portion overlapping with an outer peripheral portion of the semiconductor element surrounding the central portion and surrounds the central region. At least four wire pieces are disposed in the outer peripheral region at positions corresponding to at least four respective corners of the semiconductor element. At least one wire piece is disposed to extend toward the element center in the plan view.

First claim

What is claimed is:

1 . A semiconductor device comprising:
a semiconductor element having a front surface and a back surface opposite to the front surface in a plate thickness direction of the semiconductor element, the semiconductor element including, as main electrodes, a front electrode on the front surface and a back electrode on the back surface, the back electrode having an area larger than an area of the front electrode; a bonding member disposed between a first facing surface and a second facing surface to form a bonding part; a wiring member electrically connected to at least one of the main electrodes through the bonding member; and a plurality of wire pieces disposed in the bonding member, and fixed to the first facing surface to protrude from the first facing surface, wherein the wiring member includes a back-side wiring member disposed adjacent to the back surface of the semiconductor element and electrically connected to the back electrode, the bonding member includes a back-side bonding member that forms a bonding part between the back electrode and the back-side wiring member, the back-side bonding member has, in a plan view in the plate thickness direction, a central region that overlaps with a central portion of the semiconductor element including an element center, and an outer peripheral region that includes a portion overlapping with an outer peripheral portion of the semiconductor element surrounding the central portion and surrounds the central region, the plurality of wire pieces include at least four wire pieces disposed in the outer peripheral region of the back-side bonding member at positions corresponding to at least four respective corners of the semiconductor element, the plurality of wire pieces include at least one wire piece disposed to extend toward the element center in the plan view, the plurality of wire pieces include at least one wire piece fixed to a surface of the wiring member in a bonding part between the at least one of the main electrodes and the wiring member, the at least one wire piece fixed to the surface of the wiring member has a flat part on a side adjacent to the at least one of the main electrodes in the plate thickness direction, the flat part being parallel to the surface of the wiring member to which the at least one wire piece is fixed, and the at least one wire piece fixed to the surface of the wiring member has, on a side adjacent to the surface of the wiring member in the plate thickness direction, a fixed part fixed to the surface of the wiring member, and a non-fixed part that extends from the fixed part and is unfixed to the surface of the wiring member.

2 . The semiconductor device according to claim 1 , wherein
the flat part of the at least one wire piece is provided at a position overlapping with the non-fixed part in the plate thickness direction.

3 . A semiconductor device comprising:
a semiconductor element having a front surface and a back surface opposite to the front surface in a plate thickness direction of the semiconductor element, the semiconductor element including, as main electrodes, a front electrode on the front surface and a back electrode on the back surface, the back electrode having an area larger than an area of the front electrode; a bonding member disposed between a first facing surface and a second facing surface to form a bonding part; a wiring member electrically connected to at least one of the main electrodes through the bonding member; and a plurality of wire pieces disposed in the bonding member, and fixed to the first facing surface to protrude from the first facing surface, wherein the wiring member includes a back-side wiring member disposed adjacent to the back surface of the semiconductor element and electrically connected to the back electrode, the bonding member includes a back-side bonding member that forms a bonding part between the back electrode and the back-side wiring member, the back-side bonding member has, in a plan view in the plate thickness direction, a central region that overlaps with a central portion of the semiconductor element including an element center, and an outer peripheral region that includes a portion overlapping with an outer peripheral portion of the semiconductor element surrounding the central portion and surrounds the central region, the plurality of wire pieces include at least four wire pieces disposed in the outer peripheral region of the back-side bonding member at positions corresponding to at least four respective corners of the semiconductor element, the plurality of wire pieces include at least one wire piece disposed to extend toward the element center in the plan view, the plurality of wire pieces are fixed to a surface of the wiring member in a bonding part between the at least one of the main electrodes and the wiring member, each of the plurality of wire pieces has a volume of 1.0×10 7 μm 3 or less, and each of the plurality of wire pieces includes a bonding part bonded to the surface of the wiring member, and non-bonding parts extending from opposite ends of the bonding part in an extending direction of the wire piece without being bonded to the wiring member.

4 . The semiconductor device according to claim 3 , wherein
in the extending direction, a length of the wire piece is 400 μm or more and 450 μm or less, and a length of each of the non-bonding parts is 100 μm or less.

5 . The semiconductor device according to claim 4 , wherein
a height of each of the non-bonding parts from the surface of the wiring member to which the bonding part is bonded is 80 μm or more and 100 μm or less.

6 . The semiconductor device according to claim 3 , wherein
a ratio of a length of each of the non-bonding parts to a length of the bonding part in the extending direction is 0.1 or more and 0.65 or less.

7 . The semiconductor device according to claim 3 , wherein
a ratio of a width of the bonding part to a length of the bonding part in the extending direction is 0.2 or more and 0.7 or less.

8 . A semiconductor device comprising:
a semiconductor element having a front surface and a back surface opposite to the front surface in a plate thickness direction of the semiconductor element, the semiconductor element including, as main electrodes, a front electrode on the front surface and a back electrode on the back surface, the back electrode having an area larger than an area of the front electrode; a bonding member disposed between a first facing surface and a second facing surface to form a bonding part; a wiring member electrically connected to at least one of the main electrodes through the bonding member; and a plurality of wire pieces disposed in the bonding member, and fixed to the first facing surface to protrude from the first facing surface, wherein the wiring member includes a back-side wiring member disposed adjacent to the back surface of the semiconductor element and electrically connected to the back electrode, the bonding member includes a back-side bonding member that forms a bonding part between the back electrode and the back-side wiring member, the back-side bonding member has, in a plan view in the plate thickness direction, a central region that overlaps with a central portion of the semiconductor element including an element center, and an outer peripheral region that includes a portion overlapping with an outer peripheral portion of the semiconductor element surrounding the central portion and surrounds the central region, the plurality of wire pieces include at least four wire pieces disposed in the outer peripheral region of the back-side bonding member at positions corresponding to at least four respective corners of the semiconductor element, the

Assignees

• Denso Corp

Inventors

• Fukuoka Daisuke
• Okumura Tomomi
• Ootani Yuuji
• Kobayashi Wataru
• Nomura Takumi
• Mitsunaga Tomoaki
• Hirano Takahiro
• Sakai Takamichi
• Oka Kengo

Classifications

• H10W72/015

  of bond wires · CPC title

• H10W90/811 Primary

  Multiple chips on leadframes · CPC title

• H10W74/111

  the semiconductor body being completely enclosed · CPC title

• H10W70/481

  for devices being provided for in groups H10D8/00 - H10D48/00 · CPC title

• H10W70/465

  Bumps or wires · CPC title