Material for forming organic film, patterning process, compound, and polymer

Patent metadata

Field	Value
Publication number	US-2022214617-A1
Application number	US-202117549965-A
Country	US
Kind code	A1
Filing date	Dec 14, 2021
Priority date	Dec 25, 2020
Publication date	Jul 7, 2022
Grant date	—

Abstract

A material for forming organic film contains (A) compound shown by general formula (1) and/or polymer having repeating unit shown by general formula (4), and (B) organic solvent. In formula (1), AR1, AR2, AR3, AR4, AR5, and AR6 each represent benzene ring or naphthalene ring; R1 represents any group shown in following formula (2); “n” represents integer of 1 or 2; and W represents divalent organic group having 2-50 carbon atoms. In formula (4), AR1, AR2, AR3, AR4, AR5, AR6, R1, “n”, and W are as defined above; and R2 and R3 each represent hydrogen atom or organic group having 1-20 carbon atoms, and optionally bond to each other within molecule to form cyclic organic group. An object provides a material for forming organic film to enable high etching resistance and excellent twisting resistance without impairing resin-derived carbon content; and compound and polymer suitable for material for forming organic film.

First claim

1 . A material for forming an organic film, comprising:
(A) a compound shown by the following general formula (1) and/or a polymer comprising a repeating unit shown by the following general formula (4); and (B) an organic solvent,

wherein AR1, AR2, AR3, AR4, AR5, and AR6 each represent a benzene ring or a naphthalene ring; R1 represents any group shown in the following formula (2); “n” represents an integer of 1 or 2; and W represents a divalent organic group having 2 to 50 carbon atoms,

wherein AR1, AR2, AR3, AR4, AR5, AR6, R1, “n”, and W are as defined above; and R2 and R3 each represent a hydrogen atom or an organic group having 1 to 20 carbon atoms, and optionally bond to each other within a molecule to form a cyclic organic group.

2 . The material for forming an organic film according to claim 1 , wherein
the compound is a compound shown by the following general formula (3),

wherein AR5, AR6, R1, and “n” are as defined above.

3 . The material for forming an organic film according to claim 1 , wherein
the polymer is a polymer comprising a repeating unit shown by the following general formula (5),

wherein AR5, AR6, R1, R2, R3, and “n” are as defined above.

4 . The material for forming an organic film according to claim 2 , wherein
the polymer is a polymer comprising a repeating unit shown by the following general formula (5),

wherein AR5, AR6, R1, R2, R3, and “n” are as defined above.

5 . The material for forming an organic film according to claim 1 , wherein the polymer has a weight-average molecular weight of 1000 to 10000.

6 . The material for forming an organic film according to claim 1 , wherein the organic solvent is a mixture of one or more organic solvents each having a boiling point of lower than 180° C. and one or more organic solvents each having a boiling point of 180° C. or higher.

7 . The material for forming an organic film according to claim 1 , further comprising one or more of (C) an acid generator, (D) a surfactant, (E) a crosslinking agent, and (F) a plasticizer.

8 . A patterning process for forming a pattern in a substrate to be processed, comprising:
forming an organic film by using the material for forming an organic film according to claim 1 on a substrate to be processed; forming a silicon-containing resist underlayer film by using a silicon-containing resist underlayer film material on the organic film; forming a resist upper layer film by using a photoresist composition on the silicon-containing resist underlayer film; forming a circuit pattern in the resist upper layer film; transferring the pattern to the silicon-containing resist underlayer film by etching while using the resist upper layer film having the formed pattern as a mask; transferring the pattern to the organic film by etching while using the silicon-containing resist underlayer film having the transferred pattern as a mask; and further forming the pattern in the substrate to be processed by etching while using the organic film having the transferred pattern as a mask.

9 . A patterning process for forming a pattern in a substrate to be processed, comprising:
forming an organic film by using the material for forming an organic film according to claim 1 on a substrate to be processed; forming a silicon-containing resist underlayer film by using a silicon-containing resist underlayer film material on the organic film; forming an organic antireflective coating film on the silicon-containing resist underlayer film; forming a resist upper layer film by using a photoresist composition on the organic antireflective coating film, so that a 4-layered film structure is constructed; forming a circuit pattern in the resist upper layer film; transferring the pattern to the organic antireflective coating film and the silicon-containing resist underlayer film by etching while using the resist upper layer film having the formed pattern as a mask; transferring the pattern to the organic film by etching while using the silicon-containing resist underlayer film having the transferred pattern as a mask; and further forming the pattern in the substrate to be processed by etching the substrate to be processed while using the organic film having the transferred pattern as a mask.

10 . A patterning process for forming a pattern in a substrate to be processed, comprising:
forming an organic film by using the material for forming an organic film according to claim 1 on a substrate to be processed; forming an inorganic hard mask selected from a silicon oxide film, a silicon nitride film, and a silicon oxynitride film on the organic film; forming a resist upper layer film by using a photoresist composition on the inorganic hard mask; forming a circuit pattern in the resist upper layer film; transferring the pattern to the inorganic hard mask by etching while using the resist upper layer film having the formed pattern as a mask; transferring the pattern to the organic film by etching while using the inorganic hard mask having the transferred pattern as a mask; and further forming the pattern in the substrate to be processed by etching the substrate to be processed while using the organic film having the transferred pattern as a mask.

11 . A patterning process for forming a pattern in a substrate to be processed, comprising:
forming an organic film by using the material for forming an organic film according to claim 1 on a substrate to be processed; forming an inorganic hard mask selected from a silicon oxide film, a silicon nitride film, and a silicon oxynitride film on the organic film; forming an organic antireflective coating film on the inorganic hard mask; forming a resist upper layer film by using a photoresist composition on the organic antireflective coating film, so that a 4-layered film structure is constructed; forming a circuit pattern in the resist upper layer film; transferring the pattern to the organic antireflective coating film and the inorganic hard mask by etching while using the resist upper layer film having the formed pattern as a mask; transferring the pattern to the organic film by etching while using the inorganic hard mask having the transferred pattern as a mask; and further forming the pattern in the substrate to be processed by etching the substrate to be processed while using the organic film having the transferred pattern as a mask.

12 . The patterning process according to claim 10 , wherein the inorganic hard mask is formed by a CVD method or an ALD method.

13 . The patterning process according to claim 8 , wherein the pattern is formed in the resist upper layer film by a method of a photolithography with a wavelength of 10 nm or more and 300 nm or less, a direct drawing with electron beam, nanoimprinting, or a combination thereof.

14 . The patterning process according to claim 8 , wherein alkaline development or organic solvent development is employed as a development method in the patterning process.

15 . The patterning process according to claim 8 , wherein the substrate to be processed is a semiconductor

Assignees

• Shinetsu Chemical Co

Inventors

• Kori Daisuke
• Tachibana Seiichiro
• Nonaka Shiori

Classifications

• C08G8/20

  with polyhydric phenols · CPC title

• C07D311/96

  spiro-condensed with carbocyclic rings or ring systems · CPC title

• G03F7/004 Primary

  Photosensitive materials (G03F7/12, G03F7/14 take precedence) · CPC title

• G03F7/2004

  characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light · CPC title

• G03F7/0045

  with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors · CPC title