Method for producing product having oxide film

Patent metadata

Field	Value
Publication number	US-2022205135-A1
Application number	US-202117537697-A
Country	US
Kind code	A1
Filing date	Nov 30, 2021
Priority date	Dec 25, 2020
Publication date	Jun 30, 2022
Grant date	—

Abstract

A method for producing a product including an oxide film of a second metal that is doped with a first metal includes generating a mist from a raw material solution in which both the first metal and the second metal are dissolved, and supplying the mist to a surface of a substrate to form the oxide film on the surface of the substrate. A pH of the raw material solution is less than 7.

First claim

What is claimed is:

1 . A method for producing a product including an oxide film of a second metal that is doped with a first metal, the method comprising:
generating a mist from a raw material solution in which both the first metal and the second metal are dissolved; and supplying the mist to a surface of a substrate to form the oxide film on the surface of the substrate, wherein a pH of the raw material solution is less than 7.

2 . The method according to claim 1 , wherein
in the raw material solution, a standard oxidation reduction potential of the first metal is less than that of hydrogen.

3 . The method according to claim 1 , wherein
the first metal is selected from the group consisting of Li, K, Rb, Cs, Ba, Ra, Sr, Ca, Na, Mg, No, Md, La, Fm, Y, Ce, Nd, Lu, Sm, Gd, Yb, Es, Ac, Cf, Am, Cm, Sc, Bk, Pu, Eu, Be, Th, Np, Hf, Al, U, Ti, Zr, Mn, V, Nb, Cr, Zn, Ga, Fe, Cd, In, Tl, Co, Ni, Mo, Sn, and Pb.

4 . The method according to claim 1 , wherein
a concentration of the first metal in the raw material solution is less than 1 mol/L.

5 . The method according to claim 1 , further comprising
dissolving the first metal in an acidic solution; and adjusting a pH of the acidic solution to be less than 7.

6 . The method according to claim 5 , further comprising
dissolving the first metal in the acidic solution in a container made of a material free from Si.

7 . The method according to claim 6 , further comprising
maintaining the container at a positive pressure relative to the atmosphere with a gas generated when the first metal is being dissolved in the acidic solution.

8 . The method according to claim 1 , wherein
the second metal is selected from the group consisting of Li, K, Rb, Cs, Ba, Ra, Sr, Ca, Na, Mg, No, Md, La, Fm, Y, Ce, Nd, Lu, Sm, Gd, Yb, Es, Ac, Cf, Am, Cm, Sc, Bk, Pu, Eu, Be, Th, Np, Hf, Al, U, Ti, Zr, Mn, V, Nb, Cr, Zn, Ga, Fe, Cd, In, Tl, Co, Ni, Mo, Sn, and Pb.

9 . The method according to claim 1 , wherein
a concentration of the second metal in the raw material solution is less than 1 mol/L.

10 . The method according to claim 1 , further comprising:
dissolving the second metal in an acidic solution; and adjusting a pH of the acidic solution to be less than 7.

11 . The method according to claim 10 , further comprising
dissolving the second metal in the acidic solution in a container made of a material free from Si.

12 . The method according to claim 11 , further comprising
maintaining the container at a positive pressure relative to the atmosphere with a gas generated when the second metal is being dissolved in the acidic solution.

13 . The method according to claim 1 , wherein
the oxide film is a single crystal film.

14 . The method according to claim 1 , wherein
the oxide film is a semiconductor film.

15 . A method for producing a product including an oxide film of a second metal that is doped with a first metal, the method comprising:
generating a first mist from a first raw material solution in which the first metal is dissolved; generating a second mist from a second raw material solution in which the second metal is dissolved; and supplying the first mist and the second mist to a surface of a substrate to form the oxide film on the surface of the substrate, wherein a pH of the first raw material solution is less than 7.

16 . The method according to claim 15 , wherein
a pH of the second raw material solution is less than 7.

17 . The method according to claim 15 , wherein
in the first raw material solution, a standard oxidation reduction potential of the first metal is less than that of hydrogen.

18 . The method according to claim 15 , wherein
in the second raw material solution, a standard oxidation reduction potential of the second metal is less than that of hydrogen.

Assignees

• Denso Corp
• Toyota Motor Co Ltd
• MIRISE Technologies Corporation
• Nat Univ Corp Kyoto Inst Technology

Inventors

• Nagaoka Tatsuji
• Nishinaka Hiroyuki
• Yoshimoto Masahiro

Classifications

• H10P14/6529

  by exposure to a gas or vapour · CPC title

• H10P14/6939 Primary

  characterised by the metal · CPC title

• C23C16/448

  characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials · CPC title

• C30B25/14 Primary

  Feed and outlet means for the gases; Modifying the flow of the reactive gases · CPC title

• C23C16/40

  Oxides · CPC title