Ion beam etching chamber with etching by-product redistributor

Patent metadata

Field	Value
Publication number	US-2022148856-A1
Application number	US-202217586484-A
Country	US
Kind code	A1
Filing date	Jan 27, 2022
Priority date	May 29, 2018
Publication date	May 12, 2022
Grant date	—

Abstract

In some embodiments, the present disclosure relates to an etching apparatus. The etching apparatus includes a substrate holder disposed within a processing chamber and having a workpiece reception surface configured to hold a workpiece. A lower surface of the processing chamber has a first region that is directly below the workpiece reception surface and that is configured to receive a byproduct from an etching process. A baffle extends outward from a sidewall of the processing chamber at a vertical position between the substrate holder and the lower surface of the processing chamber. The baffle covers a second region of the lower surface. A byproduct redistributor is configured to move the byproduct from the first region of the lower surface to the second region of the lower surface that is directly below the baffle.

First claim

What is claimed is:

1 . An etching apparatus, comprising:
a substrate holder disposed within a processing chamber and comprising a workpiece reception surface configured to hold a workpiece, wherein a lower surface of the processing chamber has a first region that is directly below the workpiece reception surface and that is configured to receive a byproduct from an etching process; a baffle extending outward from a sidewall of the processing chamber at a vertical position between the substrate holder and the lower surface of the processing chamber, wherein the baffle covers a second region of the lower surface; and a byproduct redistributor configured to move the byproduct from the first region of the lower surface to the second region of the lower surface that is directly below the baffle.

2 . The etching apparatus of claim 1 ,
a second baffle extending outward from a second sidewall of the processing chamber at a second vertical position between the substrate holder and the lower surface of the processing chamber, wherein an outermost sidewall of the baffle is separated from an outermost sidewall of the second baffle by a space that is directly over a center of the lower surface and directly below the substrate holder.

3 . The etching apparatus of claim 1 , wherein an uppermost surface of the baffle is a surface that continuously and unbrokenly extends between outermost sidewalls of the baffle.

4 . The etching apparatus of claim 1 , wherein the baffle has a first sidewall contacting the sidewall of the processing chamber and a second sidewall facing a center of the processing chamber, the second sidewall having a greater height than the first sidewall.

5 . The etching apparatus of claim 1 , wherein the baffle is asymmetric about a vertical line bisecting the baffle.

6 . The etching apparatus of claim 1 , wherein the byproduct from the etching process that is configured to be moved by the byproduct redistributor is on the lower surface.

7 . The etching apparatus of claim 1 , further comprising:
a heater arranged below the first region of the lower surface of the processing chamber; and a cooler arranged below the second region of the lower surface of the processing chamber.

8 . The etching apparatus of claim 7 , wherein the baffle is directly between the cooler and the substrate holder.

9 . The etching apparatus of claim 7 , wherein the baffle is directly above the cooler and the substrate holder is directly above the baffle.

10 . The etching apparatus of claim 7 , wherein the heater is at least partially laterally outside of the substrate holder.

11 . An etching apparatus, comprising:
a substrate holder disposed within a processing chamber and comprising a workpiece reception surface that is configured to hold a workpiece and that faces a lower surface of the processing chamber, wherein the lower surface of the processing chamber has a first region that is directly below the workpiece reception surface and that is configured to receive a byproduct from an etching process; a baffle extending outward from a sidewall of the processing chamber at a vertical position between the substrate holder and the lower surface of the processing chamber, wherein the baffle is separated from the lower surface of the processing chamber by an opening that faces the first region of the lower surface; and a byproduct redistributor configured to move the byproduct from the first region of the lower surface to directly below the baffle via the opening.

12 . The etching apparatus of claim 11 , wherein the baffle comprises an upper surface that continuously extends between outermost sidewalls of the baffle as viewed along a cross-section of the baffle, the upper surface intersecting the sidewall of the processing chamber.

13 . The etching apparatus of claim 11 , wherein the baffle is separated from the lower surface of the processing chamber by a space, the space laterally between the baffle and a center of the lower surface.

14 . The etching apparatus of claim 11 , wherein the byproduct redistributor is configured to move the byproduct laterally along the lower surface from directly below the substrate holder to directly below the baffle.

15 . The etching apparatus of claim 11 , further comprising:
a heater arranged directly below the first region of the lower surface of the processing chamber; and a cooler arranged directly below the baffle.

16 . An etching apparatus, comprising:
a substrate holder disposed within a processing chamber, wherein a lower surface of the processing chamber has a first region that is directly below the substrate holder and that is configured to receive a byproduct from an etching process; a baffle extending outward from a sidewall of the processing chamber at a vertical position between the substrate holder and the lower surface of the processing chamber; and a byproduct redistributor configured to laterally move the byproduct from the etching process along the lower surface from the first region of the lower surface that is outside of the baffle to directly below the baffle.

17 . The etching apparatus of claim 16 , wherein the baffle comprises a protrusion extending outward from a lower surface of the baffle that faces a bottom of the processing chamber, the protrusion extending to a bottommost surface of the baffle that is separated from the lower surface of the processing chamber by a non-zero distance.

18 . The etching apparatus of claim 16 , wherein the byproduct redistributor is configured to move the byproduct from the etching process that has landed on the lower surface.

19 . The etching apparatus of claim 16 , wherein the lower surface continuously extends between a first outlet arranged within the lower surface and a second outlet arranged within the lower surface.

20 . The etching apparatus of claim 19 , wherein the baffle continuously extends from directly over the first outlet to directly over the second outlet.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Hsieh Te-Hsien
• Tseng Lee-Chuan

Classifications

• H10P72/7624

  characterised by the mechanical construction of the susceptor, stage or support · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/267

  using plasmas · CPC title

• H10P50/242

  of Group IV materials · CPC title

• H01J37/32422

  Arrangement for selecting ions or species in the plasma · CPC title