Substrate thining using temporary bonding processes

Patent metadata

Field	Value
Publication number	US-2022140227-A1
Application number	US-202117515630-A
Country	US
Kind code	A1
Filing date	Nov 1, 2021
Priority date	Nov 3, 2020
Publication date	May 5, 2022
Grant date	—

Abstract

An article including a support unit, the support unit including a support substrate and a bonding layer such that the bonding layer is bonded to a surface of the support substrate. Furthermore, a total thickness variation TTV across a width of the support unit is about 2.0 microns or less.

First claim

What is claimed is:

1 . An article comprising:
a support unit comprising:
a support substrate having a surface; and
a bonding layer bonded to the surface of the support substrate,
wherein a total thickness variation TTV across a width of the support unit is about 2.0 microns or less.

2 . The article of claim 1 , wherein the total thickness variation TTV across the width of the support unit is about 1.0 microns or less.

3 . The article of claim 2 , wherein the total thickness variation TTV across the width of the support unit is about 0.2 microns or less.

4 . The article of claim 1 , wherein:
a total thickness variation TTV across a width of the support substrate is about 1.0 micron or less, and a total thickness variation TTV across a width of the bonding layer is about 1.0 micron or less.

5 . The article of claim 1 , wherein the support substrate has a surface roughness of about 1.0 nm or less.

6 . The article of claim 1 , wherein the support substrate is comprised of glass, glass ceramic, ceramic, or silicon.

7 . The article of claim 1 , further comprising a first substrate, the bonding layer coupling the support substrate with the first substrate.

8 . The article of claim 7 , wherein the first substrate comprises lithium tantalate (LiTaO 3 ), lithium niobate (LiNbO 3 ), aluminum nitride (AlN), lead zirconate titanate (PZT) (Pb[Zr x Ti 1-x ]O 3 (0≤x≤1), or a combination thereof.

9 . The article of claim 7 , wherein the first substrate has a thickness of about 2.0 microns or less.

10 . The article of claim 1 , wherein the bonding layer has a thickness of about 100 nm or less.

11 . The article of claim 10 , wherein the thickness of the bonding layer is about 20 nm or less.

12 . The article of claim 1 , wherein the bonding layer comprises one or more surfactants, one or more polymers, one or more organic salts, one or more inorganic materials, or combinations thereof.

13 . The article of claim 12 , wherein the bonding layer consists of alternating layers of first and second layers, the first layer being a monolayer of a cationic polymer and the second layer being a monolayer of an anionic polymer.

14 . The article of claim 13 , wherein one of the first layers is directly attached to the support substrate.

15 . The article of claim 14 , wherein the bonding layer comprises a cationic surfactant with a head group comprising a charged nitrogen selected from the group consisting of primary, secondary, tertiary, or quaternary ammonium, pyridinium, and combinations thereof.

16 . The article of claim 1 , wherein a thickness of the support substrate is in a range from about 0.3 mm to about 1.0 mm.

17 . An article comprising:
a support unit comprising:
a support substrate having a surface; and
a bonding layer bonded to the surface of the support substrate,
wherein a total thickness variation TTV across a width of the support unit is about 2.0 microns or less;
a first substrate, the bonding layer coupling the support substrate with the first substrate; and a device support wafer removably coupled with the support substrate.

18 . A method of forming a thin substrate using a support unit, the method comprising:
bonding a first substrate to a support substrate with a bonding layer,
the support substrate and the bonding layer forming a support unit having a total thickness variation TTV across a width of the support unit of about 2.0 microns or less.

19 . The method of claim 18 , further comprising, after bonding the first substrate to the support substrate, reducing the thickness of the first substrate from a first thickness to a second thickness, the second thickness being less than the first thickness.

20 . The method of claim 19 , wherein the first thickness is in a range from about 10 microns to about 1,000 microns.

21 . The method of claim 20 , wherein the second thickness is about 2.0 microns or less.

Assignees

• Corning Inc

Inventors

• Bhattacharyya Indrani
• Brueckner Julia Anne Dorothee
• Chang Ya-Huei
• Kong Bokyung
• Mazumder Prantik
• Yoon Jun Ro
• Zhang Jian-Zhi Jay

Classifications

• H10N30/708

  Intermediate layers, e.g. barrier, adhesion or growth control buffer layers · CPC title

• H01L41/312 Primary

  Electricity · mapped topic

• H01L41/1873

  Electricity · mapped topic

• H01L41/337

  Electricity · mapped topic

• H01L41/0815

  Electricity · mapped topic