Selective deposition of metal oxide
US-2024282572-A1 · Aug 22, 2024 · US
US2022098730A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2022098730-A1 |
| Application number | US-202017039969-A |
| Country | US |
| Kind code | A1 |
| Filing date | Sep 30, 2020 |
| Priority date | Sep 30, 2020 |
| Publication date | Mar 31, 2022 |
| Grant date | — |
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The sequential infiltration synthesis (SIS) and Atomic Layer Deposition (ALD) of metal and/or metal oxides on personal medical equipment (PPE). The deposited metal and/or metal oxides imbues antimicrobial properties to the PPE.
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What is claimed is: 1 . A method depositing a metal or metal oxide comprising: providing a base material in a reactor; exposing the base material to a pre-treatment metal precursor; and depositing a metal or metal oxide using sequential infiltration synthesis (SIS) process including at least one cycle of: pulsing a first metal precursor into the reactor for a first metal precursor pulse time; exposing the base material to the first metal precursor for a first metal precursor exposure time and at a first partial pressure, the first metal precursor infiltrating at least a portion of the base material and binding therein with the base material; purging the reactor of the first metal precursor; pulsing a co-reactant precursor into the reactor for a first co-reactant pulse time; exposing the base material to the co-reactant precursor for a co-reactant precursor exposure time and at a second partial pressure, the co-reactant precursor infiltrating at least a portion of the base material and binding therein to form the metal or metal oxide; and purging the reactor of the co-reactant precursor. 2 . The method of claim 1 , wherein the first metal precursor pulse time is 2-4 seconds. 3 . The method of claim 1 , wherein pre-treatment metal precursor and the first metal precursor are the same. 4 . The method of claim 4 , wherein the pre-treatment metal precursor is exposed for 10-30 seconds. 5 . The method of claim 4 , wherein the pre-treatment metal precursor is exposed for 12-16 seconds. 6 . The method of claim 1 , wherein the co-reactant precursor pulse time is greater than 2 seconds to 4 seconds. 7 . The method of claim 1 , wherein purging the reactor of the co-reactant precursor proceeds for greater than 0 seconds to 500 seconds and comprises reducing the pressure within the reactor to substantially a vacuum. 8 . The method of claim 1 , wherein the base material comprises polypropylene, polyethylene,polyester, polysulfone, polyethersulfone, polyurethane, polyvinylidene fluoride, or polytetrafluoroethylene. 9 . The method of claim 1 , wherein the metal or metal oxide comprises a material selected from the group consisting of include co zinc titanium oxide (ZnTiO), molybdenum (Mo), tungsten (W), sliver (Ag), silver oxide (AgO), silver aluminum oxide (AgAlO), silver zinc oxide (AgZnO), molybedenum zinc oxide (MoZnO), and aluminum molybdenum oxyfluoride (AlMoOF). 10 . A method depositing a metal or metal oxide comprising: providing a base material in a reactor; exposing the base material to a pre-treatment metal precursor and depositing a metal or metal oxide using atomic layer deposition process including at least one cycle of: pulsing a first metal precursor into the reactor for a first metal precursor pulse time; exposing the base material to the first metal precursor for a first metal precursor exposure time and at a first partial pressure, the first metal precursor binding on the base material; purging the reactor of the first metal precursor; pulsing a co-reactant precursor into the reactor for a first co-reactant pulse time; exposing the base material to the co-reactant precursor for a co-reactant precursor exposure time and at a second partial pressure, the co-reactant precursor reacting with the bound first metal precursor to form the metal or metal oxide; and purging the reactor of the co-reactant precursor. 11 . The method of claim 1 , wherein the first metal precursor pulse time 2-4 seconds. 12 . The method of claim 1 , wherein pre-treatment metal precursor and the first metal precursor are the same. 13 . The method of claim 4 , wherein the pre-treatment metal precursor is exposed for 10-30 seconds. 14 . The method of claim 4 , wherein the pre-treatment metal precursor is exposed for 12-16 seconds. 15 . The method of claim 1 , wherein the co-reactant precursor pulse time is greater than 2 seconds to 4 seconds. 16 . The method of claim 1 , wherein purging the reactor of the co-reactant precursor proceeds for greater than 0 seconds to 500 seconds and comprises reducing the pressure within the reactor to substantially a vacuum. 17 . The method of claim 1 , wherein the base material comprises polypropylene, polyethylene,polyester, polysulfone, polyethersulfone, polyurethane, polyvinylidene fluoride, or polytetrafluoroethylene. 18 . The method of claim 1 , wherein the metal or metal oxide comprises a material selected from the group consisting of include co zinc titanium oxide (ZnTiO), molybdenum (Mo), tungsten (W), sliver (Ag), silver oxide (AgO), silver aluminum oxide (AgAlO), silver zinc oxide (AgZnO), molybedenum zinc oxide (MoZnO), and aluminum molybdenum oxyfluoride (AlMoOF).
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