Efficient post-cmp defect reduction using cleaners containing oxidizing agents

Patent metadata

Field	Value
Publication number	US-2022098530-A1
Application number	US-202117479624-A
Country	US
Kind code	A1
Filing date	Sep 20, 2021
Priority date	Sep 25, 2020
Publication date	Mar 31, 2022
Grant date	—

Abstract

The present technology generally relates to liquid compositions for cleaning post-CMP semiconductor surfaces, and methods of cleaning a semiconductor surface having ceria (CeO2) particles thereon.

First claim

1 . A liquid composition for cleaning post-CMP semiconductor surfaces comprising:
an oxidizer composition, where the oxidizer composition has a standard reduction potential (E°)>2.0V; and at least one of a basic amine compound and a surfactant.

2 . The liquid composition of claim 1 further comprising an acid.

3 . The liquid composition of claim 2 , wherein the acid is selected from a phosphonic acid and bisphosphonic acid

4 . The liquid composition of claim 3 , wherein the acid is selected from 1-hydroxyethylidene-1,1-diphosphonic acid, NTMP (Nitrilotris (Methylene Phosphonic Acid)), PBTC (Phosphonobutane Tricarboxylic Acid), EDTMP (Ethylene Diamine Tetra(Methylene Phosphonic Acid)), pyrophosphoric acid, aminoethylene phosphonic acid, medronic acid, and (2-carboxyethylidene)bisphosphonic acid.

5 . The liquid composition of claim 1 comprising a surfactant and a base.

6 . The liquid composition of n m claim 1 , wherein the surfactant is a carboxylic acid surfactant.

7 . The liquid composition of claim 1 , wherein the surfactant is selected from capryleth-9 carboxylic acid or another polyoxyethylene alkyl ether carboxylic acid known in the art as suitable for use as a surfactant.

8 . The liquid composition of claim 1 , wherein the basic amine compound is an alkylated amine.

9 . The liquid composition of claim 1 , wherein the basic amine compound is at least one selected from the group consisting of: 3-amino-4-octanol, 2-(diethylamino) ethanethiol, captamine, diethylethanolamine, methylcysteamine, 2-(tert-butylamino) ethanethiol, 2,2′-dimethoxy-1,1-dimethyl-dimethylamine, 3-butoxypropylamine, N-acetylcysteamine, homocysteamine, N, N-dimethylhydroxylamine, 2-(isopropylamino) ethanol, 2-(methylthioethyl) amine, 1-aminopropane-2-thiol, leucinol, cysteamine, N, O-dimethylhydroxylamine, aminomethyl propanol, aminomethyl propanediol, aminoethyl propanediaol, 2-amino-2-(hydroxymethyl)propane-1,2-diol, 2-dimethylamino-2-methyl-1-propanol, dimethyl 2-amino-2-methyl-1,3-propanediol, dimethyl 2-amino-2-ethyl-1,3-propanediol, tris(hydroxymethyl)(dimethylamino)methane, and 2-Amino-1-butanol.

10 . The liquid composition of claim 1 , wherein the oxidizer composition has a standard reduction potential (E°)>2.5V.

11 . The liquid composition of claim 1 , wherein the oxidizer composition comprises at least two different oxidizing compounds.

12 . The liquid composition of claim 11 , wherein the at least two different oxidizing compounds include persulfate and hydrogen peroxide.

13 . The liquid composition of claim 12 , wherein the persulfate is selected from ammonium persulfate, sodium persulfate, potassium persulfate, calcium persulfate, and magnesium persulfate.

14 . The liquid composition of claim 1 , wherein the composition has a pH of 2 to 6.

15 . The liquid composition of claim 1 , wherein the oxidizer composition is less than 5 wt. % of the liquid composition for cleaning post-CMP semiconductor surfaces.

16 . The liquid composition of claim 1 , wherein the liquid composition for cleaning post-CMP semiconductor surfaces has a water concentration of at least 95 wt. %.

17 . A method of cleaning a semiconductor surface having CeO 2 particles thereon, the method comprising applying a liquid composition of claim 1 .

18 . A method of cleaning a semiconductor surface having CeO 2 particles thereon, the method comprising applying a liquid composition comprising an oxidizer composition, where the oxidizer composition has a standard reduction potential (E°)>2.0V.

19 . The method of claim 17 , wherein the semiconductor surface having CeO 2 particles was previously subjected to chemical mechanical polishing.

20 . The method of claim 17 , wherein the semiconductor surface comprises TEOS.

Assignees

• Fujimi Inc

Inventors

• Crockett Brandon
• Granstrom Jimmy

Classifications

• H10P70/20

  Cleaning during device manufacture · CPC title

• H10P70/237

  the processing being a planarisation of insulating layers · CPC title

• H10P95/08

  Planarisation of organic insulating materials · CPC title

• C11D3/365

  containing carboxyl groups · CPC title

• C11D3/361

  Phosphonates, phosphinates or phosphonites · CPC title