Silicon oxide deposition method

Patent metadata

Field	Value
Publication number	US-2022084817-A1
Application number	US-202117472981-A
Country	US
Kind code	A1
Filing date	Sep 13, 2021
Priority date	Sep 16, 2020
Publication date	Mar 17, 2022
Grant date	—

Abstract

The current disclosure relates to methods of depositing silicon oxide on a substrate, methods of forming a semiconductor device and a method of forming a structure. The method comprises providing a substrate in a reaction chamber, providing a silicon precursor in the reaction chamber, the silicon precursor comprising a silicon atom connected to at least one oxygen atom, the at least one oxygen atom being connected to a carbon atom, and providing a reactant comprising hydrogen atoms in the reaction chamber to form silicon oxide on the substrate.

First claim

1 . A method for depositing silicon oxide on a substrate, the method comprising:
providing a substrate in a reaction chamber; providing a silicon precursor in the reaction chamber, the silicon precursor comprising a silicon atom connected to at least one oxygen atom, the at least one oxygen atom being connected to a carbon atom; providing a reactant comprising hydrogen atoms in the reaction chamber to form silicon oxide on the substrate.

2 . The method according to claim 1 , wherein the silicon precursor comprises a compound according to formula I,
SiR a (OOCR′) 4-a ,   Formula I

wherein, each R and R′ are independently selected from hydrogen or unsubstituted, substituted, saturated, unsaturated and/or functionalized hydrocarbons, and 4>a≥0.

3 . The method according to claim 1 , wherein the silicon precursor is selected from a group consisting of silicon tetraacetate (triacetyloxysilyl acetate), triacetoxy vinyl silane, silicontetrapropionate, triacetoxysilane, triacetoxy(methyl)silane, triacetoxy(methoxy) silane, diacetoxydimethylsilane.

4 . The method according to claim 1 , wherein the reactant comprises at least one other atom not being hydrogen.

5 . The method according to claim 4 , wherein the other atom is nitrogen.

6 . The method according to claim 5 , wherein the reactant comprises ammonia (NH 3 ) or ammonia nitrogen (NH 3 —N 2 ) or ammonia-hydrogen (NH 3 —H 2 ) mixture.

7 . The method according to claim 5 , wherein the reactant comprises an amine.

8 . The method according to claim 1 , wherein the other atom is oxygen.

9 . The method according to claim 8 , wherein the reactant comprises an alcohol.

10 . The method according to claim 1 , wherein the method is a cyclic deposition method.

11 . The method according to claim 1 , wherein the method is a thermal deposition method.

12 . The method according to claim 1 , wherein the method further comprises removing excess silicon precursor from the reaction chamber by an inert gas prior to providing the reactant in the reaction chamber.

13 . The method according to claim 1 , wherein the method comprises providing a metal alkoxide reactant into the reaction chamber.

14 . The method according to claim 13 , wherein the metal alkoxide is dimethyl aluminum isopropoxide.

15 . The method according to claim 15 , wherein the method is a cyclic deposition method, and the silicon precursor and the reactant are provided into the reaction chamber at least twice for each time the metal alkoxide is provided into the reaction chamber.

16 . The method according to claim 1 ,
wherein the substrate comprises a surface, the surface comprises a first portion comprising a first material and a second portion comprising a second material, and the second material comprises an organic material; and wherein silicon oxide is selectively deposited on the first portion relative to the second portion.

17 . The method according to claim 16 , wherein the first material comprises a dielectric.

18 . The method according to claim 16 , wherein the first material comprises a metal or a metal oxide.

19 . The method according to claim 16 , wherein the first material comprises a metal nitride or a metal carbide or a metal boride.

20 . The method according to claim 16 , wherein the second material comprises a passivation agent.

21 . The method according to claim 20 , wherein the passivation agent is an organic passivation agent.

22 . A deposition assembly for depositing silicon oxide on a substrate comprising:
a reaction chamber constructed and arranged to hold the substrate; and, a precursor injector system constructed and arranged to provide a precursor and/or a reactant into the reaction chamber, wherein the assembly comprises a precursor vessel constructed and arranged to contain and evaporate a silicon precursor comprising a silicon atom connected to at least one oxygen atom, the at least one oxygen atom being connected to a carbon atom, and the assembly is constructed and arranged to provide the precursor via the precursor injector system to the reaction chamber to deposit the silicon oxide on the substrate.

Assignees

• Asm Ip Holding Bv

Inventors

• Sharma Varun
• Chiappe Daniele
• Tois Eva
• Madhiwala Viraj
• Tuominen Marko
• Dezelah Charles
• Givens Michael
• Blomberg Tom

Classifications

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10P14/69215 Primary

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/61

  using masks · CPC title

• H10P14/6686

  the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane · CPC title