Organic semiconductor element, strain sensor, vibration sensor, and manufacturing method for organic semiconductor element
US-12068093-B2 · Aug 20, 2024 · US
US2022082458A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2022082458-A1 |
| Application number | US-202117533293-A |
| Country | US |
| Kind code | A1 |
| Filing date | Nov 23, 2021 |
| Priority date | May 30, 2019 |
| Publication date | Mar 17, 2022 |
| Grant date | — |
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A flexible sensor includes a substrate having flexibility; and a sensor element provided on the substrate, wherein the sensor element includes a transistor having a gate electrode, a source electrode, and a drain electrode; and a variable resistance portion connected to either of the gate electrode, the source electrode, and the drain electrode, and the variable resistance portion has a resistance value changeable due to a strain, and wherein the variable resistance portion includes an extension portion extending in a direction.
Opening claim text (preview).
What is claimed is: 1 . A flexible sensor, comprising: a substrate having flexibility; and a sensor element provided on the substrate, wherein the sensor element comprising: a transistor having a gate electrode, a source electrode, and a drain electrode; and a variable resistance portion connected to either of the gate electrode, the source electrode, and the drain electrode, and the variable resistance portion has a resistance value changeable due to a strain, and wherein the variable resistance portion includes an extension portion extending in a direction. 2 . The flexible sensor according to claim 1 , wherein the source electrode and the drain electrode are arranged in a direction intersecting with the direction in which the extension portion extends. 3 . The flexible sensor according to claim 2 , wherein the source electrode and the drain electrode are arranged in a direction orthogonal to the direction in which the extension portion extends. 4 . The flexible sensor according to claim 1 , wherein a plurality of the sensor elements are provided. 5 . The flexible sensor according to claim 4 , wherein an active-matrix type sensor portion in which the plurality of sensor elements are arranged in a matrix shape is provided. 6 . The flexible sensor according to claim 5 , wherein the extension portions of the variable resistance portions in the plurality of sensor elements included in the sensor portion extend in the same direction with each other. 7 . The flexible sensor according to claim 6 , wherein a plurality of the sensor portions are provided, and the directions in which the extension portions extend respectively are different for each sensor portion. 8 . The flexible sensor according to claim 7 , wherein the plurality of sensor portions are arranged along a direction orthogonal to a plane in which the plurality of sensor elements are arranged in the matrix shape. 9 . The flexible sensor according to claim 5 , wherein the plurality of sensor elements included in the sensor portion comprises a first sensor element including the variable resistance portion with the extension portion extending in a first direction; and a second sensor element including the variable resistance portion with the extension portion extending in a second direction different from the first direction. 10 . The flexible sensor according to claim 9 , wherein the first sensor element and the second sensor element are alternatively arranged in the first direction and the second direction. 11 . The flexible sensor according to claim 9 , wherein the second direction is orthogonal to the first direction. 12 . The flexible sensor according to claim 5 , wherein the transistor includes a P-type channel, the variable resistance portion is connected to the source electrode, and the sensor portion includes a signal line to which at least two or more drain electrodes of the sensor element are connected. 13 . The flexible sensor according to claim 12 , wherein a fixed resistance portion to which at least two or more drain electrodes are connected via the signal line. 14 . The flexible sensor according to claim 4 , wherein at least one or more sensor elements are provided in each surface at two sides of the substrate. 15 . The flexible sensor according to claim 1 , wherein the variable resistance portion includes a plurality of the extension portions. 16 . The flexible sensor according to claim 15 , wherein the plurality of extension portions in the variable resistance portion extend in the same direction and are arranged at intervals therebetween in a direction orthogonal to the extending direction, and the variable resistance portion is configured in a rectangle wavy shape in which the adjacent extension portions are connected to each other. 17 . The flexible sensor according to claim 16 , wherein the interval is shorter than a length of the extension portion. 18 . The flexible sensor according to claim 16 , wherein the plurality of extension portions in the variable resistance portion are arranged at equal intervals. 19 . The flexible sensor according to claim 1 , wherein the variable resistance portion includes an insulator and a plurality of conductive particles dispersed in the insulator. 20 . The flexible sensor according to claim 19 , wherein a material of the insulator is an energy curable resin. 21 . The flexible sensor according to claim 20 , wherein the energy curable resin is a thermosetting resin. 22 . The flexible sensor according to claim 20 , wherein the energy curable resin is a photocurable resin. 23 . The flexible sensor according to claim 1 , wherein the transistor is a thin film transistor. 24 . The flexible sensor according to claim 23 , wherein the transistor is an organic thin film transistor.
Interconnections, e.g. scanning lines · CPC title
wherein the TFTs are in active matrices · CPC title
Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title
characterised by the electrodes · CPC title
characterised by the shapes, relative sizes or dispositions of the gate electrodes · CPC title
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