Shock recording device

Patent metadata

Field	Value
Publication number	US-9500547-B1
Application number	US-201615229778-A
Country	US
Kind code	B1
Filing date	Aug 5, 2016
Priority date	Feb 25, 2014
Publication date	Nov 22, 2016
Grant date	Nov 22, 2016

Abstract

The present invention provides a shock recording device, comprising: a vibration energy harvester comprising a first electrode and a second electrode, the vibration energy harvester converting an energy of a shock applied thereto into a potential difference between the first electrode and the second electrode; and a ferroelectric transistor comprising a gate electrode, a source electrode, and a drain electrode, the ferroelectric transistor further comprising a stacked structure of a ferroelectric layer and a semiconductor layer. The gate electrode is electrically connected to the first electrode. The source electrode is electrically connected to the second electrode. This shock recording device does not need a power source used to record a shock.

First claim

The invention claimed is:

1. A shock recording device, comprising:
a vibration energy harvester comprising a first electrode and a second electrode, the vibration energy harvester converting an energy of a shock applied thereto into a potential difference between the first electrode and the second electrode; and
a ferroelectric transistor comprising a gate electrode, a source electrode, and a drain electrode, the ferroelectric transistor further comprising a stacked structure of a ferroelectric layer and a semiconductor layer,
wherein
the gate electrode is electrically connected to the first electrode;
the source electrode is electrically connected to the second electrode; and
the shock recording device comprises a zener diode electrically connected to the source electrode and the drain electrode.

2. The shock recording device according to claim 1 , wherein
the zener diode comprises an anode terminal and a cathode terminal;
the anode terminal is electrically connected to the source electrode; and
the cathode terminal is electrically connected to the gate electrode.

3. The shock recording device according to claim 1 , wherein
the zener diode comprises an anode terminal and a cathode terminal;
the cathode terminal is electrically connected to the source electrode; and
the anode terminal is electrically connected to the gate electrode.

4. The shock recording device according to claim 1 , further comprising:
a reset voltage generation circuit comprising a DC power source and a switch element, both of which are electrically connected in series, wherein
one end of the DC power source is electrically connected to the drain electrode; and
one end of the switch element is electrically connected to the gate electrode.

5. The shock recording device according to claim 1 , further comprising:
a resistance, wherein
one end of the resistance is electrically connected to the gate electrode; and
the other end of the resistance is electrically connected to the zener diode and the vibration energy harvester.

6. The shock recording device according to claim 5 , wherein
the ferroelectric transistor has a gate capacitance C G ;
the resistance has a resistance value R; and
the following mathematical formula (I) is satisfied:
0.7 milliseconds≦time constant T (second)≦7.0 milliseconds  (I)

where
the time constant T (second) is equal to the product of (the resistance value R)·(the gate capacitance C G ).

Assignees

• Panasonic Ip Man Co Ltd

Inventors

• Ueda Michihito
• Kaneko Yukihiro
• Nishitani Yu
• Omote Atsushi

Classifications

• G01L1/2293

  of the semi-conductor type · CPC title

• G01L1/18 Primary

  using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material · CPC title

• G01L5/0052 Primary

  measuring forces due to impact (G01L5/0061, G01L5/14 take precedence; impact testing of structures G01M7/08; impact testing of material G01N3/00) · CPC title