Apparatus and method for processing substrate using plasma

Patent metadata

Field	Value
Publication number	US-2022076925-A1
Application number	US-202117392586-A
Country	US
Kind code	A1
Filing date	Aug 3, 2021
Priority date	Sep 8, 2020
Publication date	Mar 10, 2022
Grant date	—

Abstract

A substrate processing apparatus and a substrate processing method using plasma capable of controlling an etch rate and/or uniformity according to a position of a substrate are provided. The substrate processing apparatus includes a first space disposed between an electrode and an ion blocker; a second space disposed between the ion blocker and a shower head; a processing space for processing a substrate under the shower head; a first gas supply module for providing a first gas for generating plasma in the first space; a second gas supply module for providing a second gas to be mixed with the effluent of the plasma in the processing space; and a third gas supply module for providing a third gas to be mixed with the effluent of the plasma in the processing space.

First claim

What is claimed is:

1 . An apparatus for processing a substrate comprising:
a first space disposed between an electrode and an ion blocker; a second space disposed between the ion blocker and a shower head; a processing space for processing a substrate under the shower head; a first gas supply module for providing a first gas for generating plasma in the first space; a second gas supply module for providing a second gas to be mixed with an effluent of the plasma in the processing space; and a third gas supply module for providing a third gas to be mixed with an effluent of the plasma in the processing space, wherein the first gas is a fluorine-containing gas, the second gas is a nitrogen and hydrogen-containing gas, the third gas is a nitrogen-containing gas different from the second gas, and the substrate includes an exposed silicon and hydrogen-containing region.

2 . The apparatus of claim 1 , wherein a flow rate control of the second gas and a flow rate control of the third gas are performed independently.

3 . The apparatus of claim 2 , wherein a uniformity when the third gas is provided at a first flow rate is higher than a uniformity when the third gas is provided at a second flow rate smaller than the first flow rate.

4 . The apparatus of claim 1 , wherein the ion blocker includes a first filter region and a second filter region disposed outside the first filter region, and the shower head includes a first shower region and a second shower region disposed outside the first shower region.

5 . The apparatus of claim 4 , wherein the second gas and the third gas are supplied through the first filter region of the ion blocker, and are not supplied through the second filter region,
wherein the second gas and the third gas are not suppled through the first shower region of the shower head, and are supplied through the second shower region.

6 . The apparatus of claim 4 , wherein the second gas and the third gas are supplied through the first shower region and the second shower region of the shower head,
wherein a flow rate of the third gas supplied through the first shower region is different from a flow rate of the third gas supplied through the second shower region.

7 . The apparatus of claim 4 , wherein the second gas and the third gas are supplied through the first filter region and the second filter region of the ion blocker,
wherein a flow rate of the third gas supplied through the first filter region is different from a flow rate of the third gas supplied through the second filter region.

8 . The apparatus of claim 1 , wherein the first gas and the fourth gas are provided through the electrode, and the fourth gas is a hydrogen-containing gas,
wherein a flow rate control of the first gas and a flow rate control of the fourth gas are performed independently.

9 . The apparatus of claim 8 , wherein the electrode includes a first electrode region and a second electrode region disposed outside the first electrode region,
wherein the first gas and the fourth gas are supplied through the first electrode region and the second electrode region, and a flow rate of the fourth gas supplied through the first electrode region and a flow rate of the fourth gas supplied through the second electrode region are different from each other.

10 . The apparatus of claim 9 , wherein a flow rate of the fourth gas supplied through the first electrode region is greater than a flow rate of the fourth gas supplied through the second electrode region,
wherein a support module for supporting the substrate is disposed in the processing space, and the support module is divided into a plurality of regions, and a temperature of a centrally located region among the plurality of regions is increased higher than a temperature of other regions.

11 . The apparatus of claim 8 , wherein an inert gas is additionally provided through the electrode.

12 . An apparatus for processing a substrate comprising:
a first space disposed between an electrode connected to a high frequency power supply and an ion blocker connected to a constant voltage; a second space disposed between the ion blocker and a shower head; a processing space for processing a substrate under the shower head; a first gas supply module for providing nitrogen trifluoride gas for generating plasma through the electrode in the first space; a second gas supply module for providing hydrogen gas for generating plasma through the electrode in the first space; and a third gas supply module for providing a first ammonia gas through a central region of the ion blocker, and providing a second ammonia gas through an edge region of the shower head to mix the first ammonia gas, the second ammonia gas, and an effluent of the plasma.

13 . The apparatus of claim 12 , wherein a flow rate of the first ammonia gas and a flow rate of the second ammonia gas are different from each other.

14 . The apparatus of claim 12 further comprises,
a fourth gas supply module for providing a first nitrogen gas through a central region of the ion blocker to mix the first nitrogen gas and an effluent of the plasma, and providing a second nitrogen gas through an edge region of the shower head to mix the second nitrogen gas and an effluent of the plasma.

15 . The apparatus of claim 14 , wherein a flow rate of the first nitrogen gas and a flow rate of the second nitrogen gas are different from each other.

16 . The apparatus of claim 12 , wherein the electrode includes a first electrode region located at a center and a second electrode region disposed outside the first electrode region,
wherein the nitrogen trifluoride gas and the hydrogen gas are supplied through a first electrode region and a second electrode region, a flow rate of the hydrogen gas supplied through the first electrode region and a flow rate of the hydrogen gas supplied through the second electrode region are different from each other.

17 . The apparatus of claim 16 , wherein a flow rate of the nitrogen trifluoride gas supplied through the first electrode region and a flow rate of the nitrogen trifluoride gas supplied through the second electrode region are different from each other.

18 . A method for processing a substrate comprising:
providing a substrate processing apparatus including a first space disposed between an electrode and an ion blocker, a second space disposed between the ion blocker and a shower head, and a processing space for processing a substrate under the shower head; locating a substrate including an exposed silicon and hydrogen-containing region in the processing space; providing, in a first section, a nitrogen-containing gas and a nitrogen and hydrogen-containing gas in the processing space to form an atmosphere in a chamber; and providing, in a second section, a fluorine-containing gas and a hydrogen-containing gas in the first space while providing a nitrogen-containing gas and a nitrogen and hydrogen-containing gas in the processing space to form a plasma in the first space, and mixing a radical filtered by the ion blocker in an effluent of the plasma, the nitrogen-containing gas, and the nitrogen and hydrogen-containing gas.

19 . The method of claim 18 further comprises,
controlling an etching uniformity of the substrate by controlling a flow rate of the nitrogen-containing gas.

20 . The method of claim 19 , wherein the ion blocker includes a first filter region and a second filter region disposed outside the first filter region,
wherein the shower head includes

Assignees

• Semes Co Ltd

Inventors

• Koo Joun Yaek
• Lee Seong Gil
• Oh Dong Sub
• Lee Ji Hwan
• Um Young Je
• Kim Dong Hun
• Park Wan Jae
• Noh Myoung Sub
• Kim Du Ri

Classifications

• H10P70/20

  Cleaning during device manufacture · CPC title

• H10P50/283

  by chemical means · CPC title

• H01J37/32449 Primary

  Gas control, e.g. control of the gas flow · CPC title

• H01J37/32348

  Dielectric barrier discharge · CPC title

• H01J37/32633

  Baffles · CPC title