Plasma generation chamber with smooth plasma resistant coating
US-2016042924-A1 · Feb 11, 2016 · US
Substrate processing apparatus and heat shield plate
US2018151380A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2018151380-A1 |
| Application number | US-201715822658-A |
| Country | US |
| Kind code | A1 |
| Filing date | Nov 27, 2017 |
| Priority date | Nov 28, 2016 |
| Publication date | May 31, 2018 |
| Grant date | — |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
There is provided a substrate processing apparatus which includes: a process container configured to accommodate a substrate; a partition member disposed between plasma generated inside the process container and the substrate, the partition member configured to selectively transmit radicals in the plasma toward the substrate; and a heat shield plate disposed between the partition member and the substrate. The heat shield plate is disposed so as to face the substrate. The heat shield plate is made of metal or silicon and is connected to the process container.
First claim
Opening claim text (preview).
What is claimed is: 1 . A substrate processing apparatus, comprising: a process container configured to accommodate a substrate; a partition member disposed between plasma generated inside the process container and the substrate, the partition member configured to selectively transmit radicals in the plasma toward the substrate; and a heat shield plate disposed between the partition member and the substrate, wherein the heat shield plate is disposed so as to face the substrate, the heat shield plate being made of a metal and being connected to the process container. 2 . The apparatus of claim 1 , wherein the heat shield plate constitutes a portion of the process container. 3 . The apparatus of claim 2 , wherein both the heat shield plate and the process container are made of aluminum or an aluminum alloy. 4 . The apparatus of claim 1 , wherein the heat shield plate has a plurality of ejection ports formed therein to eject a process gas toward the substrate. 5 . The apparatus of claim 1 , wherein the heat shield plate has a radical passage penetrating in a thickness direction, the radical passage having a cross-sectional shape increasing in diameter toward the substrate. 6 . The apparatus of claim 1 , wherein the heat shield plate is covered with a dielectric material. 7 . The apparatus of claim 6 , wherein the dielectric material is composed of a yttrium compound or silicon. 8 . A substrate processing apparatus, comprising: a process container configured to accommodate a substrate; a partition member disposed between plasma generated inside the process container and the substrate, the partition member configured to selectively transmit radicals in the plasma toward the substrate; and a heat shield plate disposed between the partition member and the substrate, wherein the heat shield plate is disposed so as to face the substrate, the heat shield plate being made of silicon and being connected to the process container. 9 . A heat shield plate disposed between a partition member, which is disposed between plasma and a substrate and configured to selectively transmit radicals in the plasma toward the substrate, and the substrate, wherein the heat shield plate is disposed so as to face the substrate, and the heat shield plate is made of a metal. 10 . A heat shield plate disposed between a partition member, which is disposed between plasma and a substrate and configured to selectively transmit radicals in the plasma toward the substrate, and the substrate, wherein the heat shield plate is disposed so as to face the substrate, and the heat shield plate is made of silicon.
Assignees
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Classifications
by chemical means · CPC title
characterised by the construction of the processing chambers, e.g. modular processing chambers · CPC title
mainly by conduction · CPC title
- H10P50/242Primary
of Group IV materials · CPC title
Generation remote from the workpiece, e.g. down-stream · CPC title
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- What does patent US2018151380A1 cover?
- There is provided a substrate processing apparatus which includes: a process container configured to accommodate a substrate; a partition member disposed between plasma generated inside the process container and the substrate, the partition member configured to selectively transmit radicals in the plasma toward the substrate; and a heat shield plate disposed between the partition member and the…
- Who is the assignee on this patent?
- Tokyo Electron Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10P50/242. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu May 31 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).