Resistive memory devices having laser-induced graphene composites and methods of making same

Patent metadata

Field	Value
Publication number	US-2022055904-A1
Application number	US-201917419231-A
Country	US
Kind code	A1
Filing date	Dec 30, 2019
Priority date	Dec 28, 2018
Publication date	Feb 24, 2022
Grant date	—

Abstract

Resistive memory devices having laser-induced graphene (LIG) composites, and methods of making resistive memory devices having LIG composites.

First claim

1 - 116 . (canceled)

117 . A method of making a resistive memory device comprising:
(a) selecting a LIG composite; and (b) depositing a metal by e-beam evaporation on the LIG composite.

118 . The method of claim 117 further comprising performing an O 2 plasma treatment on LIG composite before the step of depositing.

119 . The method of claim 117 , wherein the metal comprises Al.

120 . The method of claim 117 , wherein the LIG composite comprises LIG-PDMS composite.

121 . The method of claim 117 further comprising:
(a) utilizing a laser to irradiate a substrate to form LIG on the substrate; and
(b) forming the LIG composition from the LIG on the substrate.

122 . The method of claim 117 , wherein the step of depositing comprising utilizing a shadow mask.

123 . The method of claim 117 , wherein the resistive memory device is capable of resistive switch behavior at a tensile strain of 77% without degradation.

124 . A resistive memory device comprising a LIG composite.

125 . The resistive memory device of claim 124 , wherein the resistive memory device is made by a method of comprising
(a) selecting a LIG composite; and (b) depositing a metal by e-beam evaporation on the LIG composite.

126 . The resistive memory device of claim 124 , wherein the LIG composite comprises LIG-PDMS composite.

125 A- 126 A. (canceled)

127 - 128 . (canceled)

129 . The resistive memory device of claim 123 , wherein the resistive memory device is capable of resistive switch behavior at a tensile strain of 7.7% without degradation.

Assignees

• B G Negev Technologies And Applications Ltd At Ben Gurion Univ
• Univ Rice William M

Inventors

• Tour James Mitchell
• Luong Duy X
• Yang Kaichun
• Arnusch Christopher John
• Singh Swatantra Pratap
• Thakur Amit Kumar
• Stanford Michael G
• Li John T
• Presutti Steven E

Classifications

• Y02E10/541

  CuInSe2 material PV cells · CPC title

• H10B63/00

  Resistance change memory devices, e.g. resistive RAM [ReRAM] devices · CPC title

• Y02E60/50

  Fuel cells · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• H01M4/587

  for inserting or intercalating light metals · CPC title