Quartz glass crucible

Patent metadata

Field	Value
Publication number	US-2022018037-A1
Application number	US-202117485144-A
Country	US
Kind code	A1
Filing date	Sep 24, 2021
Priority date	Sep 23, 2016
Publication date	Jan 20, 2022
Grant date	—

Abstract

A quartz glass crucible (1) includes: a cylindrical crucible body (10) which has a bottom and is made of quartz glass; and a first crystallization-accelerator-containing coating film (13A) which is formed on an inner surface (10a) so as to cause an inner crystal layer composed of an aggregate of dome-shaped or columnar crystal grains to be formed on a surface-layer portion of the inner surface (10a) of the crucible body (10) by heating during a step of pulling up the silicon single crystal by a Czochralski method. The quartz glass crucible is intended to withstand a single crystal pull-up step undertaken for a very long period of time.

First claim

1 . A quartz glass crucible used for pulling up a silicon single crystal by a Czochralski method, comprising:
a cylindrical crucible body which has a bottom and is made of quartz glass; and a first crystallization-accelerator-containing coating film which is formed on an inner surface of the crucible body so as to cause an inner crystal layer composed of an aggregate of dome-shaped or columnar crystal grains to be formed on a surface-layer portion of the inner surface of the crucible body by heating during a step of pulling up the silicon single crystal.

2 . The quartz glass crucible according to claim 1 ,
wherein a ratio A/B between a maximum value A of a peak intensity at a diffraction angle 2θ of 20° to 25° and a maximum value B of a peak intensity at a diffraction angle 2θ of 33° to 40° obtained by analyzing the inner surface of the crucible body, on which the inner crystal layer is formed, by an X-ray diffraction method is 7 or less.

3 . The quartz glass crucible according to claim 1 ,
wherein the inner crystal layer has a dome-shaped crystal layer composed of the aggregate of dome-shaped crystal grains formed on the surface-layer portion of the inner surface of the crucible body, and a columnar crystal layer composed of the aggregate of columnar crystal grains immediately under the dome-shaped crystal layer.

4 . The quartz glass crucible according to claim 3 ,
wherein a ratio A/B between a maximum value A of a peak intensity at a diffraction angle 2θ of 20° to 25° and a maximum value B of a peak intensity at a diffraction angle 2θ of 33° to 40° obtained by analyzing the inner surface of the crucible body, on which the inner crystal layer is formed, by an X-ray diffraction method is less than 0.4.

5 . The quartz glass crucible according to claim 3 ,
wherein a crystallization accelerator contained in the first crystallization-accelerator-containing coating film is barium, and a concentration of the barium in the inner surface of the crucible body is 3.9×10 16 atoms/cm 2 or more.

6 . The quartz glass crucible according to claim 1 ,
wherein a region having a predetermined width extending downward from a rim of an upper end of an inner surface of the crucible body is a crystallization-accelerator uncoated region in which the first crystallization-accelerator-containing coating film is not formed.

7 . The quartz glass crucible according to claim 1 , further comprising:
a second crystallization-accelerator-containing coating film which is formed on an outer surface of the crucible body so as to cause an outer crystal layer composed of an aggregate of dome-shaped or columnar crystal grains to be formed on a surface-layer portion of the outer surface of the crucible body by heating during the step of pulling up.

8 . The quartz glass crucible according to claim 7 ,
wherein a ratio AB between a maximum value A of a peak intensity at a diffraction angle 2θ of 20° to 25° and a maximum value B of a peak intensity at a diffraction angle 2θ of 33° to 40° obtained by analyzing the outer surface of the crucible body, on which the outer crystal layer is formed, by an X-ray diffraction method is 0.4 or more and 7 or less.

9 . The quartz glass crucible according to claim 7 ,
wherein a crystallization accelerator contained in the second crystallization-accelerator-containing coating film is barium, and a concentration of the barium in the outer surface of the crucible body is equal to or more than 4.9×10 15 atoms/cm 2 and less than 3.9×10 16 atoms/cm 2 .

10 . The quartz glass crucible according to claim 7 ,
wherein a region having a predetermined width extending downward from a rim of the upper end of the outer surface of the crucible body is a crystallization-accelerator uncoated region in which the first crystallization-accelerator-containing coating film is not formed.

11 . (canceled)

12 . (canceled)

13 . (canceled)

14 . (canceled)

15 . (canceled)

16 . (canceled)

17 . (canceled)

18 . (canceled)

19 . (canceled)

20 . (canceled)

21 . (canceled)

22 . (canceled)

23 . (canceled)

24 . (canceled)

25 . (canceled)

26 . (canceled)

27 . (canceled)

28 . (canceled)

29 . (canceled)

30 . (canceled)

31 . A quartz glass crucible used for pulling up a silicon single crystal by a Czochralski method, comprising:
a cylindrical crucible body which has a bottom and is made of quartz glass; and a crystallization-accelerator-containing coating film which is formed on an inner surface of the crucible body so as to cause an inner crystal layer composed of an aggregate of dome-shaped or columnar crystal grains to be formed on a surface-layer portion of the inner surface of the crucible body by heating during a step of pulling up the silicon single crystal, wherein the crystallization-accelerator-containing coating film is a non-heated polymer film formed of: (i) a barium compound which is insoluble in water, and (ii) a thickener composed of a polymer in which the barium compound diffuses.

32 . The quartz glass crucible according to claim 31 ,
wherein a ratio AB between a maximum value A of a peak intensity at a diffraction angle 2θ of 20° to 25° and a maximum value B of a peak intensity at a diffraction angle 2θ of 33° to 40° obtained by analyzing the inner surface of the crucible body, on which the inner crystal layer is formed, by an X-ray diffraction method is 7 or less.

33 . The quartz glass crucible according to claim 32 ,
wherein the ratio AB between the maximum value A of the peak intensity at the diffraction angle 2θ of 20° to 25° and the maximum value B of the peak intensity at the diffraction angle 2θ of 33° to 40° obtained by analyzing the inner surface of the crucible body, on which the inner crystal layer is formed, by the X-ray diffraction method is 0.4 or more and 7 or less.

34 . The quartz glass crucible according to claim 31 ,
wherein a region having a predetermined width extending downward from a rim of the upper end of the inner surface of the crucible body is a crystallization-accelerator uncoated region in which the crystallization-accelerator-containing coating film is not formed.

Assignees

• Sumco Corp

Inventors

• Kishi Hiroshi
• Hasebe Kouta
• Abe Takahiro
• Fujiwara Hideki

Classifications

• C03C3/06

  with more than 90% silica by weight, e.g. quartz {(C03C3/045 takes precedence)} · CPC title

• C30B15/10 Primary

  Crucibles or containers for supporting the melt · CPC title

• C30B29/06

  Silicon · CPC title

• C03C17/22

  with other inorganic material (C03C17/34, C03C17/44 take precedence) · CPC title

• C03B20/00 Primary

  Processes specially adapted for the production of quartz or fused silica articles {, not otherwise provided for (C03B19/01, C03B19/066, C03B19/106, C03B19/12, C03B19/14, C03B37/00 take precedence)} · CPC title