Current measurement apparatus, molecular entity sensing apparatus, method of measuring a current, method of sensing a molecular entity
US-2024426772-A1 · Dec 26, 2024 · US
US2022016628A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2022016628-A1 |
| Application number | US-202016933597-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jul 20, 2020 |
| Priority date | Jul 20, 2020 |
| Publication date | Jan 20, 2022 |
| Grant date | — |
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Embodiments of the present disclosure provide nanopore devices, such as nanopore sensors and/or other nanofluidic devices. In one or more embodiments, a nanopore device contains a substrate, an optional lower protective oxide layer disposed on the substrate, a membrane disposed on the lower protective oxide layer, and an optional upper protective oxide layer disposed on the membrane. The membrane has a pore and contains silicon nitride. The silicon nitride has a nitrogen to silicon ratio of about 0.98 to about 1.02 and the membrane has an intrinsic stress value of about −1,000 MPa to about 1,000 MPa. The nanopore device also contains a channel extending through at least the substrate, the lower protective oxide layer, the membrane, the upper protective oxide layer, and the upper protective silicon nitride layer.
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1 . A nanopore device, comprising: a substrate; a membrane disposed above the substrate, wherein: the membrane comprises silicon nitride and contains a pore; the silicon nitride has a nitrogen to silicon ratio of about 0.98 to about 1.02; and the membrane has an intrinsic stress value of about −1,000 MPa to about 1,000 MPa; and a channel containing the pore and extending through at least the substrate. 2 . The nanopore device of claim 1 , wherein the membrane has an intrinsic stress value of about −500 MPa to about 500 MPa. 3 . The nanopore device of claim 1 , wherein the membrane has a refractive index of about 2.1 to about 2.5. 4 . The nanopore device of claim 1 , wherein the membrane comprises hydrogen at a concentration of about 1×10 17 atoms/cm 3 to less than 1×10 20 atoms/cm 3 . 5 . The nanopore device of claim 1 , wherein the membrane comprises oxygen at a concentration of about 1×10 18 atoms/cm 3 to less than 2×10 20 atoms/cm 3 . 6 . The nanopore device of claim 1 , further comprising a lower protective oxide layer disposed between and in contact with the substrate and the membrane. 7 . The nanopore device of claim 6 , further comprising an upper protective oxide layer disposed on the membrane, wherein the membrane is disposed between and in contact with the upper and lower protective oxide layers. 8 . The nanopore device of claim 1 , wherein the membrane has a thickness of about 0.001 μm to less than 0.1 μm. 9 . The nanopore device of claim 1 , wherein the pore has a diameter of about 1 nm to less than 100 nm. 10 . The nanopore device of claim 1 , wherein the membrane comprises about 0.1 atomic percent (at %) to about 10 at % of elemental silicon. 11 . The nanopore device of claim 1 , wherein the channel comprises an upper portion and a lower portion which are separated by the pore, and wherein the core is at least substantially coaxial with the upper portion, the lower portion, or both. 12 . A nanopore device, comprising: a substrate; a lower protective oxide layer disposed on the substrate; a membrane disposed on the lower protective oxide layer, wherein the membrane comprises silicon nitride and contains a pore, and wherein: the silicon nitride has a nitrogen to silicon ratio of about 0.95 to about 1.05; the membrane comprises hydrogen at a concentration of about 1×10 17 atoms/cm 3 to less than 1×10 20 atoms/cm 3 ; the membrane has a thickness of about 0.001 μm to less than 0.1 μm; and the pore has a diameter of about 1 nm to less than 100 nm; and a channel containing the pore and extending through at least the substrate and the lower protective oxide layer. 13 . The nanopore device of claim 12 , wherein the membrane has an intrinsic stress value of about −500 MPa to about 500 MPa. 14 . The nanopore device of claim 12 , wherein the membrane has a refractive index of about 2.1 to about 2.5. 15 . The nanopore device of claim 12 , wherein the membrane comprises oxygen at a concentration of about 1×10 18 atoms/cm 3 to less than 2×10 20 atoms/cm 3 . 16 . The nanopore device of claim 12 , wherein the silicon nitride has a nitrogen to silicon ratio of about 0.98 to about 1.02. 17 . The nanopore device of claim 12 , wherein the membrane has a thickness of about 0.001 μm to less than 0.1 μm. 18 . The nanopore device of claim 12 , wherein the pore has a diameter of about 1 nm to less than 100 nm. 19 . The nanopore device of claim 12 , wherein the membrane comprises about 0.1 atomic percent (at %) to about 10 at % of elemental silicon. 20 . A nanopore device, comprising: a substrate; a lower protective silicon nitride layer disposed on a lower surface of the substrate; a lower protective oxide layer disposed on an upper surface of the substrate; a membrane disposed on the lower protective oxide layer, wherein: the membrane comprises silicon nitride and contains a pore; the silicon nitride has a nitrogen to silicon ratio of about 0.95 to about 1.05; and the membrane comprises hydrogen at a concentration of about 1×10 17 atoms/cm 3 to less than 1×10 20 atoms/cm 3 ; an upper protective oxide layer disposed on the membrane; an upper protective silicon nitride layer disposed on the upper protective oxide layer; and a channel containing the pore and extending through at least the substrate, the lower protective oxide layer, the upper protective oxide layer, and the upper protective silicon nitride layer.
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