Light modulation element, beam steering device including the same, and electronic device including beam steering device

Patent metadata

Field	Value
Publication number	US-2022011642-A1
Application number	US-202117365674-A
Country	US
Kind code	A1
Filing date	Jul 1, 2021
Priority date	Jul 7, 2020
Publication date	Jan 13, 2022
Grant date	—

Abstract

Provided is a light modulation element including a first contact layer, a second contact layer, an active layer provided between the first contact layer and the second contact layer, a first contact plug provided between the first contact layer and the active layer, and a second contact plug provided between the second contact layer and the active layer, wherein a width of at least one of the first contact plug and the second contact plug is less than a width of the active layer.

First claim

What is claimed is:

1 . A light modulation element comprising:
a first contact layer; a second contact layer; an active layer provided between the first contact layer and the second contact layer; a first contact plug provided between the first contact layer and the active layer; and a second contact plug provided between the second contact layer and the active layer, wherein a width of at least one of the first contact plug and the second contact plug is less than a width of the active layer.

2 . The light modulation element of claim 1 , wherein the active layer comprises:
a plurality of quantum dot layers stacked in a direction perpendicular to an upper surface of the first contact layer; and a plurality of well layers provided respectively on the plurality of quantum dot layers, wherein a width of the active layer is less than a wavelength of light incident on the active layer, and a band gap energy of the plurality of quantum dot layers is less than a band gap energy of the plurality of well layers.

3 . The light modulation element of claim 1 , further comprising:
a first insulation film provided between the first contact layer and the active layer; and a second insulation film provided between the second contact layer and the active layer, wherein the first insulation film is provided adjacent to the first contact plug, and wherein the second insulation film is provided adjacent to the second contact plug.

4 . The light modulation element of claim 3 , wherein a refractive index of the first insulation film and a refractive index of the second insulation film are lower than a refractive index of the first contact plug and a refractive index of the second contact plug, respectively.

5 . The light modulation element of claim 3 , further comprising a passivation film provided on the first contact layer,
wherein the passivation film is provided adjacent to the first contact layer, the first insulation film, the active layer, the second insulation film, and the second contact layer.

6 . The light modulation element of claim 5 , wherein the first insulation film and the second insulation film comprise a first oxide, and
wherein the passivation film comprises an electrically insulating material which is different from the first oxide.

7 . The light modulation element of claim 2 , further comprising:
a first charge injection layer provided between the active layer and the first contact plug; and a second charge injection layer provided between the active layer and the second contact plug, wherein a width of the first charge injection layer and a width of the second charge injection layer are greater than a width of the first contact plug and a width of the second contact plug, respectively.

8 . The light modulation element of claim 7 , wherein the first contact layer and the first charge injection layer comprise gallium arsenide (GaAs) of a first conductive type,
wherein the second contact layer and the second charge injection layer comprise GaAs of a second conductive type that is different from the first conductive type, wherein the first contact plug comprises aluminum gallium arsenide (AlGaAs) of the first conductive type, and wherein the second contact plug comprises AlGaAs of the second conductive type.

9 . The light modulation element of claim 7 , wherein the first contact layer, the first contact plug, and the first charge injection layer comprise silicon (Si) of a first conductive type,
wherein the second contact layer, the second contact plug, and the second charge injection layer comprise Si of a second conductive type that is different from the first conductive type, wherein the active layer comprises intrinsic Si, and wherein the plurality of quantum dot layers comprise germanium (Ge).

10 . The light modulation element of claim 7 , wherein a conductive type of the first contact layer, the first contact plug, and the first charge injection layer is an n-type,
wherein a conductive type of the second contact layer, the second contact plug, and the second charge injection layer is a p-type, wherein the active layer is intrinsic, and wherein a width of the first contact layer is greater than a width of the second contact layer.

11 . The light modulation element of claim 10 , further comprising:
a p-type electrode provided on the second contact layer.

12 . The light modulation element of claim 7 , wherein a conductive type of the first contact layer, the first contact plug, and the first charge injection layer is a p-type,
wherein a conductive type of the second contact layer, the second contact plug, and the second charge injection layer is an n-type, wherein the active layer is intrinsic, and wherein a width of the first contact layer is greater than a width of the second contact layer.

13 . The light modulation element of claim 7 , further comprising:
an n-type electrode provided on the second contact layer.

14 . The light modulation element of claim 2 , wherein each of the plurality of quantum dot layers comprises a plurality of quantum dot patterns.

15 . The light modulation element of claim 2 , wherein the active layer further comprises a plurality of barrier layers, and
wherein a quantum dot layer and a well layer adjacent to each other among the plurality of quantum dot layers and the plurality of well layers are provided between a pair of adjacent barrier layers among the plurality of barrier layers.

16 . The light modulation element of claim 15 , wherein the plurality of quantum dot layers comprise intrinsic indium arsenide (InAs),
wherein the plurality of well layers comprise intrinsic indium gallium arsenide (InGaAs), and wherein the plurality of barrier layers comprise intrinsic GaAs.

17 . The light modulation element of claim 1 , wherein the second contact layer comprises:
a high-concentration doping layer; and a low-concentration doping layer provided between the high-concentration doping layer and the second contact plug, wherein the high-concentration doping layer and the low-concentration doping layer have the same conductivity, and wherein a doping concentration of the high-concentration doping layer is higher than a doping concentration of the low-concentration doping layer.

18 . The light modulation element of claim 1 , further comprising:
a substrate provided on the first contact plug opposite to the first contact layer; and a reflection layer provided between the substrate and the first contact layer.

19 . The light modulation element of claim 18 , wherein the reflection layer comprises a distributed Bragg reflector (DBR) that comprises a plurality of low-refractive-index layers and a plurality of high-refractive-index layers that are alternately stacked on one another.

20 . A beam steering device comprising:
a first light modulation element; and a second light modulation element, wherein each of the first light modulation element and the second light modulation element comprises:
a first contact layer;
a plurality of nanostructures provided on the first contact layer; and
a plurality of second contact layers respectively provided on the plurality of nanostructures,
wherein each of the plurality of nanostructures comprises a first contact plug, an active layer provided on the first contact plug, and a second contact plug provided on the active layer, and
wherein a width of at least one of the first contact plug and the second contact plug is less than a width of the act

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Duhyun
• Kim Sunil
• Park Junghyun
• Shin Changgyun
• Jeong Byunggil

Classifications

• G02B26/08

  for controlling the direction of light (in light guides G02B6/35) · CPC title

• G01S17/894

  Three-dimensional [3D] imaging with simultaneous measurement of time-of-flight at a two-dimensional [2D] array of receiver pixels, e.g. time-of-flight cameras or flash lidar · CPC title

• G01S17/89

  for mapping or imaging · CPC title

• G01S17/02

  Systems using the reflection of electromagnetic waves other than radio waves (G01S17/66 takes precedence) · CPC title

• H10H20/812 Primary

  within the light-emitting regions, e.g. having quantum confinement structures · CPC title