Manufacturing method for solar cell, multi-junction solar cell, solar cell module, and photovoltaic power generation system
US-2024194818-A1 · Jun 13, 2024 · US
Inorganic compound semiconductor, method for manufacturing same, and light energy conversion element using same
US2021408305A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2021408305-A1 |
| Application number | US-202117474682-A |
| Country | US |
| Kind code | A1 |
| Filing date | Sep 14, 2021 |
| Priority date | Mar 28, 2019 |
| Publication date | Dec 30, 2021 |
| Grant date | — |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
An inorganic compound semiconductor of the present disclosure contains yttrium, zinc, and nitrogen.
First claim
Opening claim text (preview).
What is claimed is: 1 . An inorganic compound semiconductor consisting essentially of yttrium, zinc, and nitrogen. 2 . The inorganic compound semiconductor according to claim 1 , wherein the inorganic compound semiconductor has a hexagonal crystal structure. 3 . The inorganic compound semiconductor according to claim 1 , wherein a molar ratio of the zinc to the yttrium is larger than or equal to 2.5 and smaller than or equal to 6. 4 . The inorganic compound semiconductor according to claim 3 , wherein the molar ratio is larger than or equal to 3.0 and smaller than or equal to 4.8. 5 . The inorganic compound semiconductor according to claim 1 , wherein the inorganic compound semiconductor is represented by a chemical formula of YZn 3 N 3 . 6 . The inorganic compound semiconductor according to claim 1 , wherein the inorganic compound semiconductor has a band gap of higher than or equal to 1.7 eV and lower than or equal to 2.5 eV. 7 . A light energy conversion element comprising: a first light energy conversion layer containing the inorganic compound semiconductor according to claim 1 . 8 . The light energy conversion element according to claim 7 , further comprising: a second light energy conversion layer containing a light energy conversion material, wherein the light energy conversion material has a band gap narrower than that of the inorganic compound semiconductor. 9 . A method for manufacturing an inorganic compound semiconductor, comprising: forming an inorganic compound semiconductor containing yttrium, zinc, and nitrogen by a sputtering method using a raw material containing yttrium and zinc in a nitrogen-containing atmosphere.
Assignees
Inventors
Classifications
Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) · CPC title
comprising multiple PN heterojunctions, e.g. tandem cells · CPC title
- H10F77/12Primary
Active materials · CPC title
Photovoltaic [PV] energy · CPC title
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US2021408305A1 cover?
- An inorganic compound semiconductor of the present disclosure contains yttrium, zinc, and nitrogen.
- Who is the assignee on this patent?
- Panasonic Ip Man Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10F77/12. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Dec 30 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).