Ion beam profiling system and related methods

Patent metadata

Field	Value
Publication number	US-2021396894-A1
Application number	US-202016946344-A
Country	US
Kind code	A1
Filing date	Jun 17, 2020
Priority date	Jun 17, 2020
Publication date	Dec 23, 2021
Grant date	—

Abstract

An ion beam profiling system include a beam profiling element, an ion sensitive element electrically isolated from the beam profiling element, an ion source configured to emit an ion beam at the beam profiling element and the ion sensitive element, and a current measuring device coupled to the ion sensitive element. The beam profiling element includes a plate of material have two parallel major surfaces, a first slit aperture extending through the plate of material and having a first longitudinal length extending in a direction parallel to the two parallel major surfaces, and a second slit aperture extending through the plate of material and having a second longitudinal length extending in a direction parallel to the two parallel major surfaces, wherein the first longitudinal length of the first slit aperture is perpendicular to the second longitudinal length of the second slit aperture.

First claim

What is claimed is:

1 . An ion beam profiling system, comprising:
a beam profiling element comprising:
a plate of material having two parallel major surfaces;
a first slit aperture extending through the plate of material and having a first longitudinal length extending in a direction parallel to the two parallel major surfaces; and
a second slit aperture extending through the plate of material and having a second longitudinal length extending in a direction parallel to the two parallel major surfaces,
wherein the first longitudinal length of the first slit aperture is perpendicular to the second longitudinal length of the second slit aperture,
an ion sensitive element electrically isolated from the beam profiling element; an ion source configured to emit an ion beam at the beam profiling element and the ion sensitive element; and a current measuring device coupled to the ion sensitive element.

2 . The ion beam profiling system of claim 1 , further comprising:
a controller operably coupled to the ion source and the current measuring device, the controller comprising:
at least one processor; and
at least one non-transitory computer-readable storage medium storing instructions thereon that, when executed by the at least one processor, cause the ion beam profiling system to:
emit, via the ion source, an ion beam at the beam profiling element and the ion sensitive element;
cause the beam profiling element to translate in a first direction relative to the ion beam to cause the ion beam to pass over the first slit aperture and over the second slit aperture; and
measure, via the current measuring device, a current generated in the ion sensitive element.

3 . The ion beam profiling system of claim 2 , wherein measuring the current generated in the ion sensitive element comprises:
measuring current generated in the ion sensitive element while the ion beam passes over the first slit aperture; and measuring current generated in the ion sensitive element while the ion beam passes over the second slit aperture.

4 . The ion beam profiling system of claim 3 , further comprising instructions that, when executed by the at least one processor, cause the ion beam profiling system to reconstruct a two-dimensional profile of the ion beam based at least partially on the current measured while ion beam passes over the first slit aperture and over the second slit aperture.

5 . The ion beam profiling system of claim 4 , wherein the reconstructed two-dimensional profile of the ion beam shows a distribution of an intensity of the ion beam throughout a cross-section of the ion beam.

6 . The ion beam profiling system of claim 3 , wherein measuring current generated in the ion sensitive element while the ion beam passes over the first slit aperture comprising measuring a current profile caused by the ion beam along a first axis of the ion beam.

7 . The ion beam profiling system of claim 6 , wherein measuring current generated in the ion sensitive element while the ion beam passes over the second slit aperture comprising measuring a current profile caused by the ion beam along a second axis of the ion beam, wherein the second axis of the ion beam is perpendicular to first axis of the ion beam.

8 . The ion beam profiling system of claim 2 , wherein an angle defined between the first direction in which the beam profiling element is translated relative to the ion beam and the first longitudinal length of the first slit aperture is about 45°, and wherein an angle defined between the first direction in which the beam profiling element is translated relative to the ion beam and the second longitudinal length of the second slit aperture is about 45°.

9 . The ion beam profiling system of claim 2 , wherein cause the beam profiling element to translate in a first direction relative to the ion beam to cause the ion beam to pass over the first slit aperture and over the second slit aperture comprises causing an entire cross-section of the ion beam to pass through both the first slit aperture and the second slit aperture incrementally.

10 . A method profiling an ion beam, the method comprising:
emitting an ion beam at a beam profiling element and an ion sensitive element; causing at least the beam profiling element to translate relative to the ion beam in a first direction; causing the ion beam to pass over a first slit aperture extending through the beam profiling element and having a first longitudinal length extending in a direction parallel to a major surface of the beam profiling element; causing the ion beam to pass over a second slit aperture extending through the beam profiling element and having a second longitudinal length extending in a direction parallel to the major surface of the beam profiling element, wherein the second longitudinal length of the second slit aperture is perpendicular to the first longitudinal length of the first slit aperture; measuring current generated in the ion sensitive element while the ion beam passes over the first slit aperture of the beam profiling element; measuring current generated in the ion sensitive element while the ion beam passes over the second slit aperture of the beam profiling element; and reconstructing a two-dimensional profile of the ion beam based at least partially on the current measured while the ion beam passes over the first slit aperture and the second slit aperture.

11 . The method of claim 10 , wherein the first direction in which the beam profiling element is translated relative to the ion beam is perpendicular to a beam path of the ion beam.

12 . The method of claim 10 , wherein an angle defined between the first direction in which the beam profiling element is translated relative to the ion beam and the first longitudinal length of the first slit aperture is about 45°, and wherein an angle defined between the first direction in which the beam profiling element is translated relative to the ion beam and the second longitudinal length of the second slit aperture is about 45°.

13 . The method of claim 10 , wherein the reconstructed two-dimensional profile of the ion beam shows a distribution of an intensity of the ion beam throughout a cross-section of the ion beam.

14 . The method of claim 10 , wherein measuring current generated in the ion sensitive element while the ion beam passes over the first slit aperture comprising measuring a current profile caused by the ion beam along a first axis of the ion beam.

15 . The method of claim 14 , wherein measuring current generated in the ion sensitive element while the ion beam passes over the second slit aperture comprising measuring a current profile caused by the ion beam along a second axis of the ion beam, wherein the second axis of the ion beam is perpendicular to the first axis of the ion beam.

16 . An ion beam profiling system, comprising:
a beam profiling element comprising:
a first profiling element having a first longitudinal axis; and
a second profiling element having a second longitudinal axis, wherein the first longitudinal axis of the first profiling element is perpendicular to the second longitudinal axis of the second profiling element;
an ion source configured to emit an ion beam at the beam profiling element.

17 . The ion beam profiling system of claim 16 , wherein the beam profiling element comprises an elongated member, wherein the first profiling element comprises a first linear portion of the elongated member, and wherein the second profiling element comprises a second, different linear portion of the elongated member.

Assignees

• Battelle Energy Alliance Llc

Inventors

• Taylor Chase N

Classifications

• H01J2237/24542

  Beam profile · CPC title

• H01J2237/24535

  Beam current · CPC title

• H01J2237/245

  Detection characterised by the variable being measured · CPC title

• H01J37/243

  Beam current control or regulation circuits (H01J37/241 takes precedence) · CPC title

• H01J37/3171

  for ion implantation · CPC title