Power supply clamp for electrostatic discharge (esd) protection having a circuit for controlling clamp time out behavior
US-2019165571-A1 · May 30, 2019 · US
Semiconductor device and system
US2021384333A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2021384333-A1 |
| Application number | US-202117409823-A |
| Country | US |
| Kind code | A1 |
| Filing date | Aug 24, 2021 |
| Priority date | Sep 25, 2019 |
| Publication date | Dec 9, 2021 |
| Grant date | — |
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- Title
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- Abstract
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- Assignees and inventors
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- First independent claim
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Abstract
Official abstract text for this publication.
A semiconductor device including: a semiconductor substrate; a temperature sensing unit provided on a front surface of the semiconductor substrate; an anode pad and a cathode pad electrically connected with the temperature sensing unit; a front surface electrode being set to a predetermined reference potential; and a bidirectional diode unit electrically connected in a serial bidirectional way between the cathode pad and the front surface electrode is provided. The output comparison diode unit may be arranged between the anode pad and the cathode pad. The temperature sensing unit may include a temperature sensing diode, and the output comparison diode unit may include a diode connected in inverse parallel to the temperature sensing diode.
First claim
Opening claim text (preview).
What is claimed is: 1 . A semiconductor device, comprising: a semiconductor substrate; a temperature sensing unit provided on a front surface of the semiconductor substrate; an anode pad and a cathode pad electrically connected to the temperature sensing unit; a front surface electrode being set to a predetermined reference potential; a bidirectional diode unit electrically connected in a serial bidirectional way between the cathode pad and the front surface electrode; and an output comparison diode unit electrically connected to the temperature sensing unit, wherein the output comparison diode unit is arranged between the anode pad and the cathode pad, and the temperature sensing unit includes a temperature sensing diode, and the output comparison diode unit includes an output protective diode connected in inverse parallel to the temperature sensing diode. 2 . The semiconductor device according to claim 1 , wherein the bidirectional diode unit is arranged between the anode pad and the cathode pad on the front surface. 3 . The semiconductor device according to claim 1 , wherein the bidirectional diode unit includes a Zener diode connected in a bidirectional way. 4 . The semiconductor device according to claim 2 , wherein the bidirectional diode unit includes a Zener diode connected in a bidirectional way. 5 . The semiconductor device according to claim 1 , wherein the front surface electrode includes, a main metal portion provided on the front surface, and a connector for connecting the main metal portion and the bidirectional diode unit. 6 . The semiconductor device according to claim 2 , wherein the front surface electrode includes, a main metal portion provided on the front surface, and a connector for connecting the main metal portion and the bidirectional diode unit. 7 . The semiconductor device according to claim 5 , comprising: a transistor section electrically connected to the front surface electrode; and a gate runner being provided on a front surface of the semiconductor substrate and electrically connected to a gate electrode of the transistor section, wherein the connector crosses over the gate runner. 8 . The semiconductor device according to claim 7 , further comprising a current sensing unit, wherein the front surface electrode includes a current sensing pad electrically connected to the current sensing unit. 9 . The semiconductor device according to claim 5 , comprising a protective film provided above the connector. 10 . The semiconductor device according to claim 7 , comprising a protective film provided above the connector. 11 . The semiconductor device according to claim 9 , wherein the protective film contains polyimide. 12 . The semiconductor device according to claim 9 , wherein the protective film has an extending portion extending in a predetermined direction on the front surface of the semiconductor substrate, and the bidirectional diode unit is arranged closer to a periphery of the front surface of the semiconductor substrate than the extending portion. 13 . The semiconductor device according to claim 11 , wherein the protective film has an extending portion extending in a predetermined direction on the front surface of the semiconductor substrate, and the bidirectional diode unit is arranged closer to a periphery of the front surface of the semiconductor substrate than the extending portion. 14 . The semiconductor device according to claim 1 , wherein the bidirectional diode unit has a first diode portion and a second diode portion connected in an anti-serial way to the first diode portion, and each of the first diode portion and the second diode portion includes a plurality of diodes connected in parallel. 15 . The semiconductor device according to claim 2 , wherein the bidirectional diode unit has a first diode portion and a second diode portion connected in an anti-serial way to the first diode portion, and each of the first diode portion and the second diode portion includes a plurality of diodes connected in parallel. 16 . A system, comprising: the semiconductor device according to claim 1 ; and a deterioration detection circuit having a switching unit and a detector, the switching unit is for being electrically connected to the temperature sensing unit and the output comparison diode unit of the semiconductor device, and applying current in a forward-direction of each of the temperature sensing unit and the output comparison diode unit by switching a direction of current to be applied, and the detector is for measuring a voltage difference value between an output voltage of when current is input in a forward-direction of the temperature sensing unit and an output voltage of when current is input in a forward-direction of the output comparison diode unit. 17 . The system according to claim 16 , wherein the detector compares the voltage difference value and a predetermined threshold value, and transmits a notice of recommendation for replacing the temperature sensing diode when the voltage difference value is larger than the threshold value. 18 . A semiconductor device, comprising: a semiconductor substrate; a temperature sensing unit provided on a front surface of the semiconductor substrate; an anode wiring and a cathode wiring electrically connected to the temperature sensing unit; a front surface electrode being set to a predetermined reference potential; and a bidirectional diode unit electrically connected in a serial bidirectional way between the cathode wiring and the front surface electrode, wherein the bidirectional diode unit is arranged between the cathode wiring and the front surface electrode on the front surface. 19 . The semiconductor device according to claim 18 , wherein the bidirectional diode unit is arranged so that the cathode wiring is between the bidirectional diode unit and the temperature sensing unit. 20 . A semiconductor device, comprising: a semiconductor substrate; a temperature sensing unit provided on a front surface of the semiconductor substrate; an anode pad and a cathode pad electrically connected to the temperature sensing unit; a current sensing unit; a current sensing pad being set to a predetermined reference potential and electrically connected to the current sensing unit; and a bidirectional diode unit electrically connected in a serial bidirectional way between the cathode pad and the current sensing pad, wherein the bidirectional diode unit is arranged between the current sensing pad and the cathode pad on the front surface.
Assignees
Inventors
Classifications
Zener diodes · CPC title
Arrangements for thermal protection or thermal control (integrated devices comprising arrangements for thermal protection H10D89/60) · CPC title
Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers · CPC title
- H10W42/60Primary
protecting against electrostatic charges or discharges, e.g. Faraday shields (integrated devices comprising arrangements for electrical protection H10D89/60) · CPC title
Emitter electrodes for IGBTs · CPC title
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Frequently asked questions
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- What does patent US2021384333A1 cover?
- A semiconductor device including: a semiconductor substrate; a temperature sensing unit provided on a front surface of the semiconductor substrate; an anode pad and a cathode pad electrically connected with the temperature sensing unit; a front surface electrode being set to a predetermined reference potential; and a bidirectional diode unit electrically connected in a serial bidirectional way …
- Who is the assignee on this patent?
- Fuji Electric Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10W42/60. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Dec 09 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).