Semiconductor Devices with Transistor Cells and Thermoresistive Element

Patent metadata

Field	Value
Publication number	US-2016163689-A1
Application number	US-201514959276-A
Country	US
Kind code	A1
Filing date	Dec 4, 2015
Priority date	Dec 5, 2014
Publication date	Jun 9, 2016
Grant date	—

Abstract

A semiconductor device includes a first load terminal electrically coupled to a source zone of a transistor cell. A gate terminal is electrically coupled to a gate electrode which is capacitively coupled to a body zone of the transistor cell. The source and body zones are formed in a semiconductor portion. A thermoresistive element is thermally connected to the semiconductor portion and is electrically coupled between the gate terminal and the first load terminal. Above a maximum operation temperature specified for the semiconductor device, an electric resistance of the thermoresistive element decreases by at least two orders of magnitude within a critical temperature span of at most 50 Kelvin.

First claim

What is claimed is:

1 . A semiconductor device, comprising:
a first load terminal electrically coupled to a source zone of a transistor cell; a gate terminal electrically coupled to a gate electrode which is capacitively coupled to a body zone of the transistor cell, the source and body zones being formed in a semiconductor portion; and a thermoresistive element thermally connected to the semiconductor portion and electrically coupled between the gate terminal and the first load terminal, wherein above a maximum operation temperature specified for the semiconductor device, an electric resistance of the thermoresistive element decreases by at least two orders of magnitude within a critical temperature span of at most 50 Kelvin.

2 . The semiconductor device of claim 1 , wherein
a set temperature at a beginning of the critical temperature span is at most 50 Kelvin above the maximum operation temperature.

3 . The semiconductor device of claim 1 , wherein
within an operating temperature range specified for the semiconductor device below the maximum operation temperature, the electric resistance of the thermoresistive element changes by less than four orders of magnitude.

4 . The semiconductor device of claim 1 , wherein
a temperature difference between a minimum and a maximum in the second derivation of a resistance/temperature characteristic of the thermoresistive element is less than 50 Kelvin.

5 . The semiconductor device of claim 1 , wherein
the critical temperature span is at most 30 Kelvin.

6 . The semiconductor device of claim 1 , further comprising:
a first load electrode electrically connected to the first load terminal and arranged at a distance from the semiconductor portion, wherein the thermoresistive element is interposed between the first load electrode and the gate electrode.

7 . The semiconductor device of claim 1 , further comprising:
a first load electrode electrically connected to the first load terminal; and a gate conductor electrically connected to the gate electrode, wherein the first load electrode and the gate conductor are arranged at a distance from the semiconductor portion, wherein the thermoresistive element is interposed between the first load electrode and the gate conductor.

8 . The semiconductor device of claim 6 , further comprising:
an interlayer dielectric interposed between the semiconductor portion and the first load electrode.

9 . The semiconductor device of claim 6 , wherein
the first load electrode is made of copper or a copper-containing alloy.

10 . The semiconductor device of claim 1 , wherein
the gate electrode extends from a first surface into the semiconductor portion and the thermoresistive element is interposed between the source zone and the gate electrode.

11 . The semiconductor device of claim 1 , wherein
the thermoresistive element is a self-resettable element and the electric resistance of the thermoresistive element changes to an original resistance value when the thermoresistive element cools down to below a set temperature at a beginning of the critical temperature span.

12 . The semiconductor device of claim 11 , wherein
the thermoresistive element comprises a bimetallic system configured to separate the gate terminal and the first load terminal below the set temperature and to electrically connect the gate terminal and the first load terminal above the set temperature.

13 . The semiconductor device of claim 11 , wherein
the thermoresistive element comprises one or more Zener and/or tunnel diodes with negative temperature coefficient.

14 . The semiconductor device of claim 11 , wherein
the thermoresistive element is based on a self-resettable phase change material.

15 . The semiconductor device of claim 11 , wherein
the thermoresistive element comprises metallic particles enclosed in shells of a dielectric material with a melting temperature at the set temperature.

16 . The semiconductor device of claim 11 , wherein
the thermoresistive element comprises elastically deformable metallic particles.

17 . The semiconductor device of claim 11 , wherein
the thermoresistive element is a composite system comprising a reversible phase change material and at least one of elastically deformable conductive particles and conductive particles enclosed in shells of a dielectric material with a melting temperature at the set temperature.

18 . The semiconductor device of claim 1 , wherein
the thermoresistive element includes a phase change material configured to change from a low-ohmic state to a high-ohmic state by heating above a reset temperature higher than a set temperature at a beginning of the critical temperature span.

19 . The semiconductor device of claim 18 , further comprising:
at least one service terminal electrically connected to the thermoresistive element.

20 . The semiconductor device of claim 1 , further comprising:
an internal gate resistance between the gate terminal and the gate electrode.

21 . The semiconductor device of claim 1 , wherein
the effective resistance of the thermoresistive element decreases by at least two orders of magnitude within a critical temperature span of at most 50 Kelvin.

22 . The semiconductor device of claim 1 , wherein
a distance between neighboring thermoresistive elements is smaller than 500 μm.

23 . An electric system comprising a semiconductor device, wherein the semiconductor device comprises
a first load terminal electrically coupled to a source zone of a transistor cell; a gate terminal electrically coupled to a gate electrode which is capacitively coupled to a body zone of the transistor cell, the source and body zones being formed in a semiconductor portion; and a thermoresistive element thermally connected to the semiconductor portion and electrically coupled between the gate terminal and the first load terminal, wherein above a maximum operation temperature specified for the semiconductor device, an electric resistance of the thermoresistive element decreases by at least two orders of magnitude within a critical temperature span of at most 50 Kelvin.

24 . The electric system of claim 23 , wherein the thermoresistive element is not self-resettable and the electric system further comprises:
a gate driver circuit electrically coupled or connected to the gate terminal and configured to supply, to the gate terminal, a first gate voltage for switching off the transistor cell, a second gate voltage for switching on the transistor cell and a reset current for resetting the thermoresistive element.

25 . The electric system of claim 23 , further comprising:
an overtemperature detection circuit configured to output a signal indicating an overtemperature condition when a gate current supplied to the gate terminal exceeds a preset threshold.

Assignees

• Infineon Technologies Ag

Inventors

• Laven Johannes Georg
• Jaeger Christian
• Mahler Joachim
• Pedone Daniel
• Prueckl Anton
• Schulze Hans-Joachim
• Schwagmann Andre
• Schwarz Patrick

Classifications

• H10W42/80

  protecting against overcurrent or overload, e.g. fuses or shunts (integrated devices comprising arrangements for electrical protection H10D89/60) · CPC title

• H10W42/00 Primary

  Arrangements for protection of devices (arrangements for thermal protection H10W40/00) · CPC title

• H10D84/148

  the built-in components being breakdown diodes, e.g. Zener diodes · CPC title

• H10D84/144

  in antiparallel diode configurations · CPC title

• H10D84/141

  VDMOS having built-in components · CPC title