Phase shift mask and electronic component manufacturing method

Patent metadata

Field	Value
Publication number	US-2021356856-A1
Application number	US-201816343756-A
Country	US
Kind code	A1
Filing date	Oct 26, 2018
Priority date	Feb 11, 2018
Publication date	Nov 18, 2021
Grant date	—

Abstract

A phase shift mask includes a transparent substrate and light-shielding portions. The light-shielding portions include a first light-shielding portion, and over one side of it, a first compensating light-shielding portion, which has a first distance to the first light-shielding portion and a first width smaller than a resolution of an exposing machine utilized for an exposure process using the phase shift mask. The light-shielding portions can further include a second compensating light-shielding portion, having a second distance to another side of the first light-shielding portion and a second width smaller than the resolution of the exposing machine. The first distance and the second distance respectively allow the first and the second compensating light-shielding portion to reduce an exposure at a region corresponding to two sides of the first light-shielding portion during the exposure process. A method manufacturing an electronic component utilizing the phase shift mask is also provided.

First claim

1 . A phase shift mask, comprising:
a transparent substrate; and a plurality of light-shielding portions over the transparent substrate; wherein:
the plurality of light-shielding portions comprise a first light-shielding portion and a first compensating light-shielding portion arranged over one side of the first light-shielding portion, wherein:
there is a first distance between the first compensating light-shielding portion and the first light-shielding portion;
the first compensating light-shielding portion has a first width smaller than a resolution of an exposing machine utilized for an exposure process using the phase shift mask; and
the first distance is configured to allow the first compensating light-shielding portion to reduce an exposure at a region corresponding to the one side of the first light-shielding portion during the exposure process.

2 . The phase shift mask of claim 1 , wherein the plurality of light-shielding portions further comprise a second compensating light-shielding portion having a second distance to another side of the first light-shielding portion facing thereto, wherein:
the second compensating light-shielding portion has a second width smaller than the resolution of the exposing machine; and the second distance is configured to allow the second compensating light-shielding portion to reduce an exposure at a region corresponding to the another side of the first light-shielding portion during the exposure process.

3 . The phase shift mask of claim 2 , wherein:
the first light-shielding portion is a wiring-shielding portion; and the first compensating light-shielding portion and the second compensating light-shielding portion are respectively arranged over two sides of the wiring-shielding portion along an extension direction of the wiring-shielding portion.

4 . The phase shift mask of claim 3 , wherein at least one of the first compensating light-shielding portion and the second compensating light-shielding portion is substantially parallel to the wiring-shielding portion.

5 . The phase shift mask of claim 4 , wherein each of the first compensating light-shielding portion and the second compensating light-shielding portion is substantially parallel to the wiring-shielding portion.

6 . The phase shift mask of claim 3 , wherein:
the first width of the first compensating light-shielding portion is substantially equal to the second width of the second compensating light-shielding portion; and the first distance is substantially equal to the second distance.

7 . The phase shift mask of claim 1 , wherein:
the resolution of the exposing machine is about 3.0 μm; and the first width has a range of about 1 μm-2 μm.

8 . The phase shift mask of claim 1 , wherein the plurality of light-shielding portions further comprise a second light-shielding portion and a third light-shielding portion, spaced apart from each other with a third distance, wherein:
a difference between the first distance and the third distance is smaller than or equal to 0.3 μm.

9 . The phase shift mask of claim 8 , wherein the first distance is substantially equal to the third distance.

10 . The phase shift mask of claim 8 , wherein the second light-shielding portion and the third light-shielding portion have a substantially same shape and size.

11 . The phase shift mask of claim 8 , wherein the second light-shielding portion, the third light-shielding portion, and the channel light-transmitting region are configured respectively for defining a source electrode, a drain electrode, and a channel region of a thin-film transistor.

12 . The phase shift mask of claim 1 , wherein each of the plurality of light-shielding portions comprises a light-shielding member and at least one phase shift member, wherein:
an orthographic projection of the light-shielding member on the transparent substrate defines a first region; an orthographic projection of the at least one phase shift member on the transparent substrate defines a second region; wherein:
each outer rim of the first region is surrounded by a phase shift region of a third width, wherein the phase shift region is within the second region but not within the first region.

13 . The phase shift mask of claim 12 , wherein the third width is smaller than 1.0 μm.

14 . The phase shift mask of claim 13 , wherein the third width is about 0.6 μm.

15 . A method for manufacturing an electronic component, comprising:
forming a first layer; forming a photoresist layer over the first layer; and performing an exposure process by means of a phase shift mask aligned over the photoresist layer to thereby obtain a pattern in the photoresist layer, wherein the phase shift mask comprises a transparent substrate and a plurality of light-shielding portions over the transparent substrate, wherein:
the plurality of light-shielding portions comprise a first light-shielding portion and a first compensating light-shielding portion, wherein:
the first compensating light-shielding portion has a first distance to one side of the first light-shielding portion facing thereto over the transparent substrate;
the first compensating light-shielding portion has a first width smaller than a resolution of an exposing machine utilized for an exposure process using the phase shift mask; and
the first distance is within a first pre-set range configured to allow the first compensating light-shielding portion to reduce an exposure at a region corresponding to the one side of the first light-shielding portion during the exposure process.

16 . The method of claim 15 , wherein the plurality of light-shielding portions further comprise a second light-shielding portion and a third light-shielding portion, together defining a channel light-transmitting region having a third width sandwiched therebetween, wherein a difference between the first distance and the third distance is smaller than or equal to 0.3 μm.

17 . The method of claim 16 , wherein:
the first light-shielding portion is a wiring-shielding portion; and the plurality of light-shielding portions further comprise a second compensating light-shielding portion having a second distance to another side of the wiring-shielding portion facing thereto over the transparent substrate, wherein:
the second compensating light-shielding portion has a second width smaller than the resolution of the exposing machine;
the second distance is within a second pre-set range configured to allow the second compensating light-shielding portion to reduce an exposure at a region corresponding to the another side of the wiring-shielding portion during the exposure process; and
the first compensating light-shielding portion and the second compensating light-shielding portion are respectively arranged over two sides of the wiring-shielding portion along an extension direction thereof.

18 . The method of claim 17 , wherein the first layer is a metal layer, wherein the method further comprising:
performing a patterning process on the metal layer using the pattern in the photoresist layer to thereby form a metallic pattern.

19 . The method of claim 18 , wherein the electronic component is an array substrate, wherein the metallic pattern comprises a source electrode, a drain electrode, and a metallic wiring.

Assignees

• Beijing Boe Display Tech Co
• Boe Technology Group Co Ltd

Inventors

• Zhang Xiaoxiang
• Liu Mingxuan
• Guo Huibin
• Song Yongzhi
• Li Xiaolong
• Xu Wenqing
• Wu Zumou

Classifications

• H10P76/2041

  Photolithographic processes · CPC title

• H10D86/0231

  using masks, e.g. half-tone masks · CPC title

• G03F1/26 Primary

  Phase shift masks [PSM]; PSM blanks; Preparation thereof · CPC title

• G03F1/36

  Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes · CPC title

• G03F1/32 Primary

  Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion,; Preparation thereof · CPC title