Cu-ga-in-na target
US-2015354055-A1 · Dec 10, 2015 · US
Magnesium oxide sputtering target
US2021351023A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2021351023-A1 |
| Application number | US-201917284003-A |
| Country | US |
| Kind code | A1 |
| Filing date | Oct 9, 2019 |
| Priority date | Oct 10, 2018 |
| Publication date | Nov 11, 2021 |
| Grant date | — |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
A sputtering target configured from a magnesium oxide sintered body, wherein a ratio of crystal grains of the magnesium oxide sintered body in which a number of pinholes in a single crystal grain is 20 or more is 50% or less. The present invention is a sputtering target configured from a magnesium oxide sintered body in which the generation of particles during sputtering is less.
First claim
Opening claim text (preview).
1 . A sputtering target configured from a magnesium oxide sintered body, wherein a ratio of crystal grains of the magnesium oxide sintered body in which a number of pinholes in a single crystal grain is 20 or more is 50% or less. 2 . The sputtering target according to claim 1 , wherein a flexural strength of the sputtering target is 150 MPa or more. 3 . The sputtering target according to claim 2 , wherein an average crystal grain size of the sputtering target is 30 μm or more and 400 μm or less. 4 . The sputtering target according to claim 3 , wherein a relative density of the sputtering target is 99.7% or higher. 5 . The sputtering target according to claim 1 , wherein an average crystal grain size of the sputtering target is 30 μm or more and 400 μm or less. 6 . The sputtering target according to claim 1 , wherein a relative density of the sputtering target is 99.7% or higher.
Assignees
Inventors
Classifications
- H01J37/3426Primary
Material · CPC title
- C23C14/3414Primary
Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title
Fine ceramics · CPC title
Compositional purity · CPC title
Magnesia · CPC title
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Frequently asked questions
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- What does patent US2021351023A1 cover?
- A sputtering target configured from a magnesium oxide sintered body, wherein a ratio of crystal grains of the magnesium oxide sintered body in which a number of pinholes in a single crystal grain is 20 or more is 50% or less. The present invention is a sputtering target configured from a magnesium oxide sintered body in which the generation of particles during sputtering is less.
- Who is the assignee on this patent?
- Jx Nippon Mining & Metals Corp
- What technology area does this patent fall under?
- Primary CPC classification H01J37/3426. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Nov 11 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).