US2021348030A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2021348030-A1 |
| Application number | US-202117384061-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jul 23, 2021 |
| Priority date | Nov 23, 2016 |
| Publication date | Nov 11, 2021 |
| Grant date | — |
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A polishing liquid for polishing a glass substrate includes cerium oxide as polishing abrasive particles, and a substance that reduces cerium oxide in response to irradiation of light.
Opening claim text (preview).
1 . A polishing liquid for polishing a glass substrate, the polishing liquid comprising: cerium oxide as polishing abrasive particles; and a substance that reduces cerium oxide in response to irradiation of light. 2 . The polishing liquid according to claim 1 , wherein a band gap of the substance that reduces cerium oxide in response to the irradiation of the light is larger than a band gap of the cerium oxide. 3 . The polishing liquid according to claim 1 , wherein an energy level at a lower end of a conduction band of the substance that reduces cerium oxide in response to the irradiation of the light is higher than an energy level at a lower end of a conduction band of the cerium oxide. 4 . The polishing liquid according to claim 1 , wherein the substance that reduces cerium oxide in response to the irradiation of the light includes at least one of gallium oxide, tantalum oxide, tantalates, niobium oxide, and niobates. 5 . The polishing liquid according to claim 1 , wherein the polishing liquid is alkaline. 6 . A polishing liquid for polishing a glass substrate, the polishing liquid comprising: as polishing abrasive particles, cerium oxide whose surface has a substance that reduces cerium oxide in response to irradiation of light. 7 . The polishing liquid according to claim 6 , wherein a band gap of the substance that reduces cerium oxide in response to the irradiation of the light is larger than a band gap of the cerium oxide. 8 . The polishing liquid according to claim 6 , wherein an energy level at a lower end of a conduction band of the substance that reduces cerium oxide in response to the irradiation of the light is higher than an energy level at a lower end of a conduction band of the cerium oxide. 9 . The polishing liquid according to claim 6 , wherein the substance that reduces cerium oxide in response to the irradiation of the light includes at least one of gallium oxide, tantalum oxide, tantalates, niobium oxide, and niobates. 10 . The polishing liquid according to claim 6 , wherein a coverage of the substance that reduces cerium oxide in response to the irradiation of the light on the surface of the cerium oxide is in a range of 0.01% to 50%. 11 . The polishing liquid according to claim 6 , wherein the polishing liquid is alkaline. 12 . A carrier particle comprising: a surface including a substance that reduces cerium oxide in response to irradiation of light and is attached to the surface, wherein the carrier particle is used for reducing cerium oxide as polishing abrasive particles contained in a polishing liquid. 13 . The carrier particle according to claim 12 , wherein a coverage of the substance that reduces cerium oxide in response to the irradiation of the light on the surface of the carrier particle is 30% or more. 14 . The carrier particle according to claim 12 , wherein a band gap of the substance that reduces cerium oxide in response to the irradiation of the light is larger than a band gap of the cerium oxide. 15 . The carrier particle according to claim 12 , wherein the substance that reduces cerium oxide in response to the irradiation of the light includes at least one of gallium oxide, tantalum oxide, tantalates, niobium oxide, and niobates. 16 . The carrier particle according to claim 12 , wherein an energy level at a lower end of a conduction band of the substance that reduces cerium oxide in response to the irradiation of the light is higher than an energy level at a lower end of a conduction band of the cerium oxide. 17 . A method for reducing cerium oxide, the method comprising: reducing the cerium oxide as the polishing abrasive particles by irradiating the carrier particle according to claim 12 with the light, and by contacting the cerium oxide as the polishing abrasive particles with the carrier particle. 18 . A method for polishing a glass substrate, by which a glass substrate is subjected to polishing processing using the polishing liquid containing cerium oxide that has been reduced using the method for reducing cerium oxide according to claim 17 . 19 . A method for manufacturing a glass substrate, the method comprising: processing in which a surface of a glass substrate is polished using the method for polishing a glass substrate according to claim 18 . 20 . A method for manufacturing a magnetic-disk glass substrate, by which a magnetic-disk glass substrate is manufactured using the method for manufacturing a glass substrate according to claim 19 .
containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title
Physical treatment to alter the texture of the substrate surface, e.g. grinding, polishing · CPC title
characterised by the composition of the lapping agent · CPC title
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