Optical proximity correction method and method of fabricating mask including the same

Patent metadata

Field	Value
Publication number	US-2021325773-A1
Application number	US-202016952330-A
Country	US
Kind code	A1
Filing date	Nov 19, 2020
Priority date	Apr 20, 2020
Publication date	Oct 21, 2021
Grant date	—

Abstract

An optical proximity correction method includes extracting first patterns from a pattern mask, performing lithography on at least a part of the first patterns to form first-first patterns, forming the first-first patterns at positions where the first patterns are formed, and performing correction on the pattern mask on which the first-first patterns are formed.

First claim

What is claimed is:

1 . An optical proximity correction method, comprising:
extracting first patterns from a pattern mask; performing lithography on at least a part of the first patterns to form first-first patterns; forming the first-first patterns at positions where the first patterns are formed; and performing correction on the pattern mask on which the first-first patterns are formed.

2 . The optical proximity correction method as claimed in claim 1 , wherein the first patterns are the same patterns.

3 . The optical proximity correction method as claimed in claim 2 , wherein performing lithography includes performing lithography only on one of the first patterns.

4 . The optical proximity correction method as claimed in claim 1 , wherein performing correction includes determining whether a mask rule check is violated.

5 . The optical proximity correction method as claimed in claim 4 , wherein performing correction includes reducing an edge placement error (EPE).

6 . The optical proximity correction method as claimed in claim 1 , wherein performing lithography includes performing inverse lithography technology (ILT).

7 . An optical proximity correction method, comprising:
extracting first patterns and second patterns from a pattern mask; performing lithography on at least a part of the first patterns to form first-first patterns; performing lithography on at least a part of the second patterns to form second-first patterns; forming the first-first patterns at positions where the first patterns are formed; forming the second-first patterns at positions where the second patterns are formed; performing correction on the pattern mask on which the first-first patterns and the second-first patterns are formed.

8 . The optical proximity correction method as claimed in claim 7 , wherein the first patterns are the same patterns.

9 . The optical proximity correction method as claimed in claim 8 , wherein performing lithography includes performing lithography only on one of the first patterns.

10 . The optical proximity correction method as claimed in claim 7 , wherein the second patterns are the same patterns.

11 . The optical proximity correction method as claimed in claim 10 , wherein performing lithography includes performing lithography only on one of the second patterns.

12 . The optical proximity correction method as claimed in claim 7 , wherein the first patterns are different from the second patterns.

13 . The optical proximity correction method as claimed in claim 7 , wherein performing correction includes determining whether a mask rule check is violated.

14 . The optical proximity correction method as claimed in claim 13 , wherein performing correction includes reducing an edge placement error (EPE).

15 . The optical proximity correction method as claimed in claim 7 , wherein performing the lithography includes performing inverse lithography technology (ILT).

16 . A method of fabricating a mask, the method comprising:
producing a pattern mask with a designed layout; performing lithography on at least a part of first patterns in the pattern mask to form first-first patterns; forming the first-first patterns at positions where the first patterns are formed; performing a correction on the pattern mask on which the first-first patterns are formed to correct an optical proximity effect; and performing a mask tape-out (MTO) on the pattern mask in which the optical proximity effect has been corrected.

17 . The method of fabricating a mask claim 16 , wherein the first patterns are the same patterns.

18 . The method of fabricating a mask claim 17 , wherein performing lithography includes performing lithography only on one of the first patterns.

19 . The method of fabricating a mask claim 16 , wherein performing correction includes determining whether a mask rule check is violated and reducing an edge placement error (EPE).

20 . The method of fabricating a mask claim 16 , wherein performing lithography includes performing inverse lithography technology (ILT).

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Soo Yong
• Moon Seo Rim
• Park Kyung Jae
• Lee Soo Ryong
• Jung Kang-Min

Classifications

• H10P76/2041

  Photolithographic processes · CPC title

• G03F1/36 Primary

  Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes · CPC title

• G03F7/70441 Primary

  Optical proximity correction [OPC] · CPC title

• H01L21/0274

  Electricity · mapped topic