Magnetoresistance effect element

Patent metadata

Field	Value
Publication number	US-2021305498-A1
Application number	US-202117345084-A
Country	US
Kind code	A1
Filing date	Jun 11, 2021
Priority date	Nov 14, 2017
Publication date	Sep 30, 2021
Grant date	—

Abstract

Provided is a magnetoresistance effect element that suppresses re-adhesion of impurities during preparation and allows a write current to easily flow. The magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer; and a nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer. In the magnetoresistance effect element, the nonmagnetic layer is a tunnel barrier layer constituted by an insulator, a side surface of the first ferromagnetic layer, a side surface of the second ferromagnetic layer and a side surface of the nonmagnetic layer form a continuous inclined surface in any side surface, and a thickness of inside the nonmagnetic layer is thicker than a thickness of outside the nonmagnetic layer.

First claim

What is claimed is:

1 . A magnetoresistance effect element, comprising:
a first ferromagnetic layer; a second ferromagnetic layer; and a nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the nonmagnetic layer is a tunnel barrier layer constituted by an insulator, a side surface of the first ferromagnetic layer, a side surface of the second ferromagnetic layer and a side surface of the nonmagnetic layer form a continuous inclined surface in any side surface, and a thickness of inside the nonmagnetic layer is thicker than a thickness of outside the nonmagnetic layer.

2 . The magnetoresistance effect element according to claim 1 ,
wherein, in a first direction extending the first ferromagnetic layer, the second ferromagnetic layer, and the nonmagnetic layer, an inclination angle of a first inclined surface including a first side surface of the first ferromagnetic layer, a first side surface of the second ferromagnetic layer and a first side surface of the nonmagnetic layer with respect to a lamination direction is greater than an inclination angle of a second inclined surface including a second side surface of the first ferromagnetic layer, a second side surface of the second ferromagnetic layer and a second side surface of the nonmagnetic layer, which intersect the first direction, with respect to the lamination direction.

3 . The magnetoresistance effect element according to claim 1 ,
wherein in a first direction extending the first ferromagnetic layer, the second ferromagnetic layer, and the nonmagnetic layer, an inclination angle of a first inclined surface including a first side surface of the first ferromagnetic layer, a first side surface of the second ferromagnetic layer and a first side surface of the nonmagnetic layer the first side surface of the spin-orbit torque wiring and the first side surface of the first ferromagnetic layer with respect to a lamination direction is 45° or greater.

4 . The magnetoresistance effect element according to claim 2 ,
wherein in the first direction an inclination angle of the first inclined surface with respect to the lamination direction is 45° or greater.

5 . The magnetoresistance effect element according to claim 1 ,
wherein the insulator is made of one or more material selected from a group consisting of Al 2 O 3 , SiO 2 , MgO, and MgAl 2 O 4 , and a part of Al, Si, or Mg in the Al 2 O 3 , SiO 2 , MgO, or MgAl 2 O 4 is optionally substituted with Zn or Be.

6 . The magnetoresistance effect element according to claim 2 ,
wherein the insulator is made of one or more material selected from a group consisting of Al 2 O 3 , SiO 2 , MgO, and MgAl 2 O 4 , and a part of Al, Si, or Mg in the Al 2 O 3 , SiO 2 , MgO, or MgAl 2 O 4 is optionally substituted with Zn or Be.

7 . The magnetoresistance effect element according to claim 3 ,
wherein the insulator is made of one or more material selected from a group consisting of Al 2 O 3 , SiO 2 , MgO, and MgAl 2 O 4 , and a part of Al, Si, or Mg in the Al 2 O 3 , SiO 2 , MgO, or MgAl 2 O 4 is optionally substituted with Zn or Be.

8 . The magnetoresistance effect element according to claim 4 ,
wherein the insulator is made of one or more material selected from a group consisting of Al 2 O 3 , SiO 2 , MgO, and MgAl 2 O 4 , and a part of Al, Si, or Mg in the Al 2 O 3 , SiO 2 , MgO, or MgAl 2 O 4 is optionally substituted with Zn or Be.

Assignees

• Tdk Corp

Inventors

• Sasaki Tomoyuki
• SHIOKAWA Yohei
• Komura Eiji
• SUDA Keita

Classifications

• H10N50/85 Primary

  Materials of the active region · CPC title

• G11C11/161

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H10N50/80

  Constructional details · CPC title

• H10N50/10 Primary

  Magnetoresistive devices · CPC title

• H01F10/3254

  the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ] · CPC title