Opto-electronic device having junction field-effect transistor structure and image sensor including the opto-electronic device

Patent metadata

Field	Value
Publication number	US-2021249465-A1
Application number	US-202016930574-A
Country	US
Kind code	A1
Filing date	Jul 16, 2020
Priority date	Feb 6, 2020
Publication date	Aug 12, 2021
Grant date	—

Abstract

Provided is an opto-electronic device having low dark noise and a high signal-to-noise ratio. The opto-electronic device may include: a first semiconductor layer doped to have a first conductivity type; a second semiconductor layer disposed on an upper surface of the first semiconductor layer and doped to have a second conductivity type electrically opposite to the first conductivity type; a transparent matrix layer disposed on an upper surface of the second semiconductor layer; a plurality of quantum dots arranged to be in contact with the transparent matrix layer; and a first electrode provided on a first side of the transparent matrix layer and a second electrode provided on a second side of the transparent matrix layer opposite to the first side, wherein the first electrode and the second electrode are electrically connected to the second semiconductor layer.

First claim

What is claimed is:

1 . An opto-electronic device comprising:
a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type provided on an upper surface of the first semiconductor layer, the second conductivity type being electrically opposite to the first conductivity type; a transparent matrix layer provided on an upper surface of the second semiconductor layer; a plurality of quantum dots arranged to be in contact with the transparent matrix layer; and a first electrode provided on a first side of the transparent matrix layer and a second electrode provided on a second side of the transparent matrix layer opposite to the first side, wherein the first electrode and the second electrode are electrically connected to the second semiconductor layer.

2 . The opto-electronic device of claim 1 , wherein the first semiconductor layer is doped to have a first doping concentration, and the second semiconductor layer is doped to have a second doping concentration less than the first doping concentration.

3 . The opto-electronic device of claim 1 , wherein the plurality of quantum dots are arranged on a two-dimensional plane in a single layer.

4 . The opto-electronic device of claim 3 , wherein the plurality of quantum dots are arranged on the upper surface of the second semiconductor layer to be in contact with the upper surface of the second semiconductor layer, and the transparent matrix layer covers the plurality of quantum dots.

5 . The opto-electronic device of claim 3 , wherein the plurality of quantum dots are embedded in the transparent matrix layer without being in contact with the upper surface of the second semiconductor layer.

6 . The opto-electronic device of claim 5 , wherein entire peripheral surface of each of the plurality of quantum dots is surrounded by the transparent matrix layer.

7 . The opto-electronic device of claim 3 , wherein the plurality of quantum dots are arranged on an upper surface of the transparent matrix layer to be in contact with the upper surface of the transparent matrix layer.

8 . The opto-electronic device of claim 3 , wherein a ratio of a first area occupied by the plurality of quantum dots to a second area of the two-dimensional plane in the single layer in which the plurality of quantum dots are arranged is about 0.1 or more.

9 . The opto-electronic device of claim 1 , wherein the plurality of quantum dots are arranged in a plurality of two-dimensional layers to have a stacked structure.

10 . The opto-electronic device of claim 9 , wherein a gap is provided between adjacent two-dimensional layers of the plurality of quantum dots, and the gap is filled with the transparent matrix layer.

11 . The opto-electronic device of claim 1 , wherein the plurality of quantum dots are irregularly dispersed in the transparent matrix layer.

12 . The opto-electronic device of claim 1 , wherein the transparent matrix layer has a thickness of about 1 nm to about 100 nm.

13 . The opto-electronic device of claim 1 , wherein the transparent matrix layer comprises a transparent oxide semiconductor material.

14 . The opto-electronic device of claim 13 , wherein the transparent oxide semiconductor material comprises at least one of silicon indium zinc oxide (SIZO), silicon zinc tin oxide (SZTO), indium gallium zinc oxide (IGZO), indium zinc oxide (IZO), or zinc tin oxide (ZTO).

15 . The opto-electronic device of claim 13 , wherein the transparent matrix layer has electrical characteristics of the first conductivity type.

16 . The opto-electronic device of claim 15 , wherein the plurality of quantum dots has electrical characteristics of the second conductivity type.

17 . The opto-electronic device of claim 13 , wherein the transparent matrix layer has electrical characteristics of the second conductivity type.

18 . The opto-electronic device of claim 17 , wherein the plurality of quantum dots has electrical characteristics of the first conductivity type.

19 . The opto-electronic device of claim 13 , wherein the transparent matrix layer comprises:
a first matrix layer provided on the upper surface of the second semiconductor layer; and a second matrix layer provided on an upper surface of the first matrix layer, wherein the first matrix layer and the second matrix layer have electrically opposite conductivity types.

20 . The opto-electronic device of claim 19 , wherein the plurality of quantum dots are arranged on the upper surface of the first matrix layer, and the second matrix layer covers the plurality of quantum dots.

21 . The opto-electronic device of claim 20 , wherein the first matrix layer has electrical characteristics of the first conductivity type, the second matrix layer has electrical characteristics of the second conductivity type, and the plurality of quantum dots have electrical characteristics of the second conductivity type.

22 . An image sensor comprising:
an array of opto-electronic devices; and a driving circuit configured to output a signal from each of the opto-electronic devices, wherein each of the opto-electronic devices comprises:
a first semiconductor layer of a first conductivity type;
a second semiconductor layer of a second conductivity type provided on an upper surface of the first semiconductor layer, the second conductivity type being electrically opposite to the first conductivity type;
a transparent matrix layer provided on an upper surface of the second semiconductor layer;
a plurality of quantum dots arranged to be in contact with the transparent matrix layer; and
a first electrode provided on a first side of the transparent matrix layer and a second electrode provided on a second side of the transparent matrix layer opposite to the first side, wherein the first electrode and the second electrode are electrically connected to the second semiconductor layer.

23 . A junction field effect transistor (JFET) comprising:
a first semiconductor layer; a second semiconductor layer provided on an upper surface of the first semiconductor layer; a transparent matrix layer provided on an upper surface of the second semiconductor layer; a plurality of quantum dots in contact with the transparent matrix layer; and a first electrode provided on a first side of the transparent matrix layer and a second electrode provided on a second side of the transparent matrix.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Cho Kyungsang
• Baik Chanwook
• Kim Hojung

Classifications

• H10F39/802

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• H10F39/196 Primary

  Junction field effect transistor [JFET] image sensors; Static induction transistor [SIT] image sensors · CPC title

• H10F77/1625

  Semiconductor nanoparticles embedded in semiconductor matrix · CPC title

• H10F77/1433

  Quantum dots · CPC title

• H10F30/2877

  Field-effect phototransistors having PN heterojunction gates · CPC title