Method of forming structures including a vanadium or indium layer

Patent metadata

Field	Value
Publication number	US-2021242011-A1
Application number	US-202117162279-A
Country	US
Kind code	A1
Filing date	Jan 29, 2021
Priority date	Feb 3, 2020
Publication date	Aug 5, 2021
Grant date	—

Abstract

Methods and systems for depositing vanadium and/or indium layers onto a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a vanadium and/or indium layer onto the surface of the substrate. The cyclical deposition process can include providing a vanadium and/or indium precursor to the reaction chamber and separately providing a reactant to the reaction chamber. The cyclical deposition process may desirably be a thermal cyclical deposition process. Exemplary structures can include field effect transistor structures, such as gate all around structures. The vanadium and/or indium layers can be used, for example, as barrier layers or liners, as work function layers, as dipole shifter layers, or the like.

First claim

1 . A method of forming a structure, the method comprising the steps of:
providing a substrate within a reaction chamber of a reactor; and using a cyclical deposition process, depositing a layer comprising one or more of vanadium and indium onto a surface of the substrate, wherein the cyclical deposition process comprises:
providing one or more of a vanadium precursor and an indium precursor to the reaction chamber; and
providing one or more of an oxygen reactant, a nitrogen reactant, a sulfur reactant, and a carbon reactant to the reaction chamber.

2 . The method of claim 1 , wherein the vanadium precursor comprises one or more of a vanadium halide, a vanadium oxyhalide, a vanadium organometallic compound, and a vanadium metal organic compound.

3 . The method of claim 1 , wherein the indium precursor comprises one or more of an indium alkyl compound, an indium cyclopentadienyl compound, an indium beta-diketonate compound, and an indium acetate compound.

4 . The method of claim 1 , wherein the structure comprises a threshold voltage tuning layer comprising the layer comprising one or more of vanadium and indium.

5 . The method of claim 1 , wherein the structure comprises a p-dipole shifter layer comprising the layer comprising one or more of vanadium and indium.

6 . The method of claim 1 , wherein the structure comprises a gate all around structure.

7 . The method of claim 6 , wherein the gate all around structure includes a high-k dielectric layer.

8 . The method of claim 1 , wherein the cyclical deposition process comprises a cyclical chemical vapor deposition process.

9 . The method of claim 1 , wherein the cyclical deposition process comprises a thermal process.

10 . The method of claim 1 , wherein a thickness of the layer comprising one or more of vanadium and indium is between about 0.1 nm and about 5 nm.

11 . The method of claim 1 , wherein the one or more of a vanadium precursor and an indium precursor comprises a halide and the step of providing one or more of an oxygen reactant, a nitrogen reactant, a sulfur reactant, and a carbon reactant to the reaction chamber comprises providing the oxygen reactant.

12 . The method of claim 1 , wherein the vanadium precursor comprises a beta-diketonate compound.

13 . The method of claim 1 , wherein the reactant comprises the oxygen reactant.

14 . The method of claim 1 , wherein the structure comprises a barrier layer comprising the layer comprising one or more of vanadium and indium.

15 . The method of claim 1 , wherein the structure comprises an etch stop layer comprising the layer comprising one or more of vanadium and indium.

16 . A structure comprising the layer comprising one or more of vanadium and indium formed according to the method of claim 1 .

17 . The structure of claim 16 , comprising a high-k dielectric layer overlying a semiconductor material.

18 . The structure of claim 17 , wherein the layer comprising one or more of vanadium and indium is overlying and in contact with the high-k dielectric layer.

19 . The structure of claim 16 , wherein a thickness of the layer comprising one or more of vanadium and indium is less than 5 nm.

20 . The structure of claim 16 , wherein the layer comprising one or more of vanadium and indium comprises one or more of vanadium nitride and vanadium carbon nitride.

21 . A gate all around device comprising the structure of claim 16 .

22 . The gate all around device of claim 21 , wherein the layer comprising one or more of vanadium and indium comprises one or more of a vanadium oxide and an indium oxide.

23 . A metal oxide semiconductor (MOS) device comprising the structure of claim 16 .

24 . A DRAM device comprising the structure of claim 16 .

25 . A logic device comprising the structure of claim 16 .

26 . A 3DNAND device comprising the structure of claim 16 .

27 . A system comprising:
one or more reaction chambers; a precursor gas source comprising one or more of a vanadium precursor and an indium precursor; a reactant gas source comprising one or more of an oxygen reactant, a nitrogen reactant, a sulfur reactant, and a carbon reactant; an exhaust source; and a controller, wherein the controller is configured to control gas flow into at least one of the one or more reaction chambers to form a layer comprising one or more of vanadium and indium overlying a surface of a substrate using a cyclical deposition process.

Assignees

• Asm Ip Holding Bv

Inventors

• Shero Eric James
• Givens Michael Eugene
• Xie Qi
• Dezelah Charles
• Alessio Verni Giuseppe

Classifications

• H10P14/6939

  characterised by the metal · CPC title

• H10P14/6339 Primary

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title

• H10P14/69397 Primary

  the material containing two or more metal elements · CPC title

• H10P14/6938 Primary

  the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides · CPC title