Track circuit surge protection

Patent metadata

Field	Value
Publication number	US-2021237783-A1
Application number	US-201917051284-A
Country	US
Kind code	A1
Filing date	May 21, 2019
Priority date	May 30, 2018
Publication date	Aug 5, 2021
Grant date	—

Abstract

A surge suppression circuit for a track circuit is provided. The surge suppression circuit comprises a first surge protection device including a first pair of silicon avalanche diodes and a second surge protection device including a second pair of silicon avalanche diodes. The first surge protection device is connected on a first connection line between a first terminal of a railroad signaling electronic equipment to be protected from a surge and a first terminal of a first rail of two physical rails. The second surge protection device is connected on a second connection line between a second terminal of the railroad signaling electronic equipment and a second terminal of a second rail of the two physical rails. The first surge protection device and the second surge protection device are connected to an earth ground terminal.

First claim

What is claimed is:

1 . A surge suppression circuit for a track circuit, comprising:
a first surge protection device including a first pair of silicon avalanche diodes; and a second surge protection device including a second pair of silicon avalanche diodes, wherein the first surge protection device is connected on a first connection line between a first terminal of a railroad signaling electronic equipment to be protected from a surge and a first terminal of a first rail of two physical rails, and wherein the second surge protection device is connected on a second connection line between a second terminal of the railroad signaling electronic equipment and a second terminal of a second rail of the two physical rails, and wherein the first surge protection device and the second surge protection device are connected to an earth ground terminal.

2 . The surge suppression circuit of claim 1 , wherein the first surge protection device is a multilayered device that stacks the first pair of silicon avalanche diodes together to reach a desired trigger level.

3 . The surge suppression circuit of claim 2 , wherein any failure of a single diode does not directly affect the track circuit since it triggers a fuse operation within a surge protection device of the first surge protection device and the second surge protection device which opens the surge suppression circuit.

4 . The surge suppression circuit of claim 1 , wherein voltage/current clamping characteristics and a speed of operation of the surge suppression circuit enable an enhanced level of a primary layer of protection.

5 . The surge suppression circuit of claim 1 , wherein the surge suppression circuit substantially eliminates a risk of a failure mode problem on a track.

6 . The surge suppression circuit of claim 1 , wherein the first pair of silicon avalanche diodes or the second pair of silicon avalanche diodes act in concert to provide a voltage clamping action which transfers a surge current from a line to an earth ground.

7 . The surge suppression circuit of claim 1 , wherein layering of the first pair of silicon avalanche diodes or the second pair of silicon avalanche diodes establishes an actual breakdown voltage such that each layer has an avalanche level of about 25 volts yielding a net breakdown voltage of about 200 volts.

8 . The surge suppression circuit of claim 1 , wherein each silicon avalanche diode of the first pair of silicon avalanche diodes or the second pair of silicon avalanche diodes is applied in a reverse bias manner such that a cathode is connected to a line and an anode is connected to an earth ground and is configured to breakdown at a specific voltage causing a surge current to avalanche conduct to the earth ground.

9 . The surge suppression circuit of claim 8 , wherein an avalanche breakdown results in carriers (electrons) being accelerated across a diode junction causing ionization within a silicon crystal lattice of the each silicon avalanche diode.

10 . The surge suppression circuit of claim 9 , wherein during a surge event an avalanche event is uniform across the diode junction which provides a consistent breakdown voltage regardless of a current level.

11 . A method of providing a surge suppression in a track circuit, the method comprising:
providing a first surge protection device including a first pair of silicon avalanche diodes; and providing a second surge protection device including a second pair of silicon avalanche diodes, wherein the first surge protection device is connected on a first connection line between a first terminal of a railroad signaling electronic equipment to be protected from a surge and a first terminal of a first rail of two physical rails, wherein the second surge protection device is connected on a second connection line between a second terminal of the railroad signaling electronic equipment and a second terminal of a second rail of the two physical rails, and wherein the first surge protection device and the second surge protection device are connected to an earth ground terminal.

12 . The method of claim 11 , wherein the first surge protection device is a multilayered device that stacks the first pair of silicon avalanche diodes together to reach a desired trigger level.

13 . The method of claim 12 , wherein any failure of a single diode does not directly affect the track circuit since it triggers a fuse operation within a surge protection device of the first surge protection device and the second surge protection device which opens the surge suppression circuit.

14 . The method of claim 11 , wherein voltage/current damping characteristics and a speed of operation of the surge suppression circuit enable an enhanced level of a primary layer of protection.

15 . The method of claim 11 , wherein the surge suppression circuit substantially eliminates risk of a failure mode problem on a track.

16 . The method of claim 11 , wherein the first pair of silicon avalanche diodes or the second pair of silicon avalanche diodes act in concert to provide a voltage clamping action which transfers a surge current from a line to an earth ground.

17 . The method of claim 11 , wherein layering of the first pair of silicon avalanche diodes or the second pair of silicon avalanche diodes establishes an actual breakdown voltage such that each layer has an avalanche level of about 25 volts yielding a net breakdown voltage of about 200 volts.

18 . The method of claim 11 , wherein each silicon avalanche diode of the first pair of silicon avalanche diodes or the second pair of silicon avalanche diodes is applied in a reverse bias manner such that a cathode is connected to a line and an anode is connected to an earth ground and is configured to breakdown at a specific voltage causing a surge current to avalanche conduct to the earth ground.

19 . The method of claim 18 , wherein an avalanche breakdown results in carriers (electrons) being accelerated across a diode junction causing ionization within a silicon crystal lattice of the each silicon avalanche diode.

20 . The method of claim 19 , wherein during a surge event an avalanche event is uniform across the diode junction which provides a consistent breakdown voltage regardless of a current level.

Assignees

• Siemens Mobility Inc

Inventors

• Corbo Mark

Classifications

• H02H9/043

  Protection of over-voltage protection device by short-circuiting · CPC title

• H02H9/042

  comprising means to limit the absorbed power or indicate damaged over-voltage protection device · CPC title

• H02H9/041

  using a short-circuiting device · CPC title

• H02H9/045

  adapted to a particular application and not provided for elsewhere · CPC title

• H02H9/044

  Physical layout, materials not provided for elsewhere (varistors H01C7/12; spark-gaps H01T; Ovshinsky devices H10N70/00) · CPC title