Ion generating device, method for manufacturing same, and air conditioner

Patent metadata

Field	Value
Publication number	US-2021205821-A1
Application number	US-202117207997-A
Country	US
Kind code	A1
Filing date	Mar 22, 2021
Priority date	Dec 14, 2015
Publication date	Jul 8, 2021
Grant date	—

Abstract

An ion generating device, a method for manufacturing an ion generating device, and an air conditioner are provided. The ion generating device may include a discharge electrode that generates ions, and a power supply that applies power to the discharge electrode. The discharge electrode may include a support formed of a conductor, and a discharge pin formed to protrude from a surface of the support and having a tip. The discharge pin may include nickel (Ni).

First claim

What is claimed is:

1 . A method of manufacturing an ion generating device including a discharge electrode, the method comprising:
forming a pattern having an etched shape on a substrate; depositing a seed layer on the substrate with the pattern; forming a metal layer on the seed layer; planarizing a top of the metal layer; removing the substrate; and removing the seed layer, wherein the substrate is made of silicon having crystal direction, and wherein the etched shape of the substrate is formed by wet etching using potassium hydroxide.

2 . The method of claim 1 , wherein the forming the pattern having the etched shape on the substrate includes:
forming a sacrifice layer on the substrate; etching a portion of the sacrifice layer such that a portion of a top of the substrate is exposed; and forming the etched shape by wet-etching the exposed portion of the top of the substrate.

3 . The method of claim 2 , wherein the etching of the portion of the sacrifice layer includes:
depositing a photosensitive resin layer on the sacrifice layer and then exposing the photosensitive resin layer to ultraviolet rays through a photo mask; exposing a portion of the sacrifice layer by forming a pattern on the photosensitive resin layer using a developing solution; exposing a portion of the substrate by forming a pattern by etching the exposed portion of the sacrifice layer; and removing the photosensitive resin layer.

4 . The method of claim 3 , wherein the photo mask includes a glass plated with a chrome layer having a predetermined pattern, wherein the photosensitive resin layer includes a photoresist that generates a chemical change when receiving light, wherein ultraviolet rays travel to the photosensitive resin layer through an opening in the chrome layer, and wherein a first part of the photosensitive resin layer not exposed to the ultraviolet rays is not changed and a second part exposed to the ultraviolet rays is cured.

5 . The method of claim 4 , wherein the developing solution melts the portion cured by the ultraviolet rays of the photosensitive resin layer to form the pattern on the photosensitive resin layer.

6 . The method of claim 2 , wherein forming the sacrifice layer on the substrate includes:
preparing and cleaning the substrate, and depositing the sacrifice layer on the substrate by Low Pressure Chemical Vapor Deposition.

7 . The method of claim 2 , wherein the etched shape of the substrate is formed with a narrower width towards an inside, and the etched shape corresponds to a shape of a discharge pin.

8 . The method of claim 2 , wherein the substrate and the seed layer are removed by wet etching, and wherein the sacrifice layer is removed by dry etching.

9 . The method of claim 1 , wherein the metal layer is formed by plating nickel.

10 . The method of claim 1 , further comprising forming a platinum coating on the metal layer.

11 . The method of claim 1 , wherein the forming the metal layer on the seed layer includes:
coating a photosensitive resin layer on the seed layer; putting a plurality of photo masks on the photosensitive resin layer and forming a pattern on the photosensitive resin layer by radiating ultraviolet rays; exposing a portion of the seed layer as the photosensitive resin layer forms the pattern; and forming the metal layer on the top layer of the exposed portion of the seed layer.

12 . The method of claim 1 , wherein the metal layer formed by removing the substrate and the seed layer corresponds to the discharge electrode including a bed and a discharge pin.

13 . An ion generating device manufactured using the method of claim 1 .

14 . A method of manufacturing an ion generating device including a discharge electrode, the method comprising:
forming a pattern having an etched shape on a substrate; depositing a seed layer on the substrate with the pattern; forming a metal layer on the seed layer; planarizing a top of the metal layer; removing the substrate; and removing the seed layer, wherein the forming of the pattern having the etched shape on the substrate includes:
forming a sacrifice layer on the substrate;
etching a portion of the sacrifice layer such that a portion of a top of the substrate is exposed; and
forming the etched shape by wet-etching the exposed portion of the top of the substrate using potassium hydroxide, wherein the etched shape of the substrate is formed with a narrower width towards an inside and corresponds to a shape of a discharge pin.

15 . The method of claim 14 , wherein the etching of the portion of the sacrifice layer includes:
depositing a photosensitive resin layer on the sacrifice layer and then exposing the photosensitive resin layer to ultraviolet rays through a photo mask; exposing a portion of the sacrifice layer by forming a pattern on the photosensitive resin layer using a developing solution; exposing a portion of the substrate by forming a pattern by etching the exposed portion of the sacrifice layer; and removing the photosensitive resin layer.

16 . The method of claim 15 , wherein the photo mask includes a glass plated with a chrome layer having a predetermined pattern, wherein the photosensitive resin layer includes a photoresist that generates a chemical change when receiving light, wherein ultraviolet rays travel to the photosensitive resin layer through an opening in the chrome layer, and wherein a first part of the photosensitive resin layer not exposed to the ultraviolet rays is not changed and a second part exposed to the ultraviolet rays is cured.

17 . An ion generating device manufactured using the method of claim 14 .

18 . A method of manufacturing an ion generating device including a discharge electrode, the method comprising:
forming a pattern having an etched shape on a substrate; depositing a seed layer on the substrate with the pattern; forming a metal layer on the seed layer by plating nickel; planarizing a top of the metal layer; removing the substrate; removing the seed layer; and forming a platinum coating on the metal layer, wherein the substrate is made of silicon having crystal direction, and wherein the etched shape of the substrate is formed by wet etching using potassium hydroxide and correspond to a shape of a discharge pin.

19 . The method of claim 18 , wherein the metal layer formed by removing the substrate and the seed layer corresponds to the discharge electrode including a bed and the discharge pin.

20 . An ion generating device manufactured using the method of claim 18 .

Assignees

• Lg Electronics Inc

Inventors

• Lee Sanggu
• Sung Bongjo
• Yoon Kyungsoo
• Kim Jihyun

Classifications

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• A61L9/22 Primary

  Ionisation · CPC title

• B03C3/00

  Separating dispersed particles from gases or vapour, e.g. air, by electrostatic effect · CPC title

• G03F7/30

  Imagewise removal using liquid means · CPC title

• G03F7/2014

  Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame · CPC title