Treatment liquid and pattern forming method

Patent metadata

Field	Value
Publication number	US-2021200097-A1
Application number	US-202117178218-A
Country	US
Kind code	A1
Filing date	Feb 17, 2021
Priority date	Sep 30, 2015
Publication date	Jul 1, 2021
Grant date	—

Abstract

An object of the present invention is to provide a treatment liquid for patterning a resist film and a pattern forming method, each of which can simultaneously suppress the occurrence of pattern collapse in a resist L/S pattern and the occurrence of omission failure in a resist C/H pattern.The treatment liquid of the present invention is a treatment liquid for patterning a resist film, which is used for subjecting a resist film obtained from an actinic ray-sensitive or radiation-sensitive resin composition to at least one of development or washing, and contains an organic solvent, in which the treatment liquid contains a first organic solvent having an SP value of 16.3 MPa1/2 or less and a second organic solvent having an SP value of 17.1 MPa1/2 or more.

First claim

What is claimed is:

1 . A rinsing liquid for patterning a resist film,
used for subjecting a resist film obtained from an actinic ray-sensitive or radiation-sensitive resin composition to washing, and containing an organic solvent, wherein the rinsing liquid contains a first organic solvent having a solubility parameter value of 16.3 MPa 1/2 or less and a second organic solvent having an solubility parameter value of 17.1 MPa 1/2 or more.

2 . The rinsing liquid according to claim 1 ,
wherein the first organic solvent includes a hydrocarbon-based solvent.

3 . The rinsing liquid according to claim 2 ,
wherein the first organic solvent includes a hydrocarbon-based solvent having 10 or more carbon atoms.

4 . The rinsing liquid according to claim 2 ,
wherein the hydrocarbon-based solvent includes undecane.

5 . The rinsing liquid according to claim 1 ,
wherein the second organic solvent includes a ketone-based solvent.

6 . The rinsing liquid according to claim 5 ,
wherein the ketone-based solvent includes an acyclic ketone.

7 . A pattern forming method comprising:
a resist film forming step of forming a resist film using an actinic ray-sensitive or radiation-sensitive resin composition; an exposing step of exposing the resist film; and a treating step of treating the exposed resist film with a developer and a rinsing liquid, wherein the treating step includes: a developing step of carrying out development with the developer; and a rinsing step of carrying out washing with the rinsing liquid according to claim 1 .

8 . The pattern forming method according to claim 7 ,
wherein the developer includes an ester-based solvent.

9 . The pattern forming method according to claim 8 ,
wherein the ester-based solvent is a solvent including at least one selected from the group consisting of butyl acetate, amyl acetate, isoamyl acetate, 2-methylbutyl acetate, 1-methylbutyl acetate, hexyl acetate, pentyl propionate, hexyl propionate, heptyl propionate, butyl butanoate, and butyl isobutanoate.

10 . The rinsing liquid according to claim 3 ,
wherein the hydrocarbon-based solvent includes undecane.

11 . The rinsing liquid according to claim 2 ,
wherein the second organic solvent includes a ketone-based solvent.

12 . The rinsing liquid according to claim 3 ,
wherein the second organic solvent includes a ketone-based solvent.

13 . The rinsing liquid according to claim 4 ,
wherein the second organic solvent includes a ketone-based solvent.

14 . The rinsing liquid according to claim 11 ,
wherein the ketone-based solvent includes an acyclic ketone.

15 . The rinsing liquid according to claim 12 ,
wherein the ketone-based solvent includes an acyclic ketone.

16 . The rinsing liquid according to claim 13 ,
wherein the ketone-based solvent includes an acyclic ketone.

Assignees

• Fujifilm Corp

Inventors

• Tsubaki Hideaki
• Tsuchihashi Toru
• Nihashi Wataru
• Yamamoto Kei

Classifications

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• G03F7/0392

  the macromolecular compound being present in a chemically amplified positive photoresist composition · CPC title

• G03F7/40

  Treatment after imagewise removal, e.g. baking · CPC title

• G03F7/20

  Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00) · CPC title

• G03F7/32 Primary

  Liquid compositions therefor, e.g. developers · CPC title