Quality control evaluation method of cyanate ester matrix resin material within cfrp composite concerning localized hydrolytic degradation
US-2024183805-A1 · Jun 6, 2024 · US
US2021193430A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2021193430-A1 |
| Application number | US-201616077782-A |
| Country | US |
| Kind code | A1 |
| Filing date | Feb 26, 2016 |
| Priority date | Feb 26, 2016 |
| Publication date | Jun 24, 2021 |
| Grant date | — |
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Provided is a machining technology to obtain a desired machining content while suppressing a possibility of causing a redeposition in a machining surface. The invention is directed to provide an ion milling device which includes an ion source which emits an ion beam, a sample holder which holds a sample, and a sample sliding mechanism which slides the sample holder in a direction including a normal direction of an axis of the ion beam.
Opening claim text (preview).
1 . An ion milling device which emits an ion beam to a sample to machine the sample, comprising: an ion source which emits the ion beam; a sample holder which holds the sample of which at least a part is shielded by a mask; a sample sliding mechanism which slides the sample holder in a direction including a normal direction of an axis of the ion beam; and a rotation mechanism which rotates and tilts the sample holder around an axis perpendicular to a direction of a sliding movement caused by the sample sliding mechanism. 2 . The ion milling device according to claim 1 , wherein the sample sliding mechanism slides the sample with a width wider than a width of the ion beam. 3 . The ion milling device according to claim 1 , wherein the sample sliding mechanism is installed above the rotation mechanism, and a position of a rotation shaft of the rotation mechanism is constant. 4 . The ion milling device according to claim 3 , wherein the rotation shaft of the rotation mechanism is on a path of the ion beam. 5 . The ion milling device according to claim 4 , wherein the slide movement mechanism slides the sample in a plane perpendicular to the rotation shaft of the rotation mechanism. 6 . The ion milling device according to claim 1 , further comprising: a user interface unit which is used to set a machining position and a machining width in a wide region milling which machines the sample in a range wider than a width of the ion beam; and a control unit which controls a movement of the sample sliding mechanism based on the machining position and the machining width which are set by the user interface unit. 7 . The ion milling device according to claim 1 , further comprising: a user interface unit which is used to set a machining position in a multipoint milling which machines a plurality of places of the sample; and a control unit which controls a movement of the sample sliding mechanism based on information on the machining position which is set by the user interface unit. 8 . An ion milling device which machines a sample by emitting an ion beam to the sample of which at least a part is shielded by a mask, comprising: an ion source which emits the ion beam; a sample holder which holds the sample; a sample sliding mechanism which slides the sample holder in a direction including a normal direction of an axis of the ion beam; and a control unit, wherein the control unit controls the sample sliding mechanism based on machining information which is input regarding a machining content of the sample, and allows a wide region milling which machines the sample in a range wider than a width of the ion beam and/or a multipoint milling which machines a plurality of places of the sample to be performed. 9 . An ion milling device which machines a sample by emitting an ion beam to the sample of which at least a part is shielded by a mask, comprising: a user interface unit which is capable of selecting at least one of a wide region milling which machines the sample in a region wider than a width of the ion beam and a multipoint milling which machines a plurality of places of the sample; and a control unit which controls a milling operation on the sample based on a selection input on the user interface unit. 10 . The ion milling device according to claim 9 , wherein in a case where the wide region milling and the multipoint milling both are selected by the user interface unit, the control unit controls the milling operation while switching an operation between the wide region milling and the multipoint milling. 11 . An ion milling method which machines a sample by emitting an ion beam to the sample of which at least a part is shielded by a mask, comprising: disposing the sample on an optical microscope, and setting a machining position and a machining width of a wide region milling which machines the sample in a region wider than a width of the ion beam and a plurality of machining positions of a multipoint milling which machines a plurality of places of the sample using the optical microscope; transmitting information on the machining position and the machining width of the wide region milling, and information on the plurality of machining positions of the multipoint milling to a control unit which controls a milling operation; taking the sample out of the optical microscope and disposing the sample on an ion milling device; and causing the control unit to control the milling operation in the ion milling device based on the information on the machining position and the machining width of the wide region milling and the information on the plurality of machining positions of the multipoint milling. 12 . An ion milling method which machines a sample by emitting an ion beam to the sample of which at least a part is shielded by a mask, comprising: disposing the sample on an optical microscope, and setting a machining position and a machining width of a wide region milling which machines the sample in a region wider than a width of the ion beam using the optical microscope; transmitting information on the machining position and the machining width of the wide region milling to a control unit which controls a milling operation; taking the sample out of the optical microscope and disposing the sample on an ion milling device; and causing the control unit to control the milling operation in the ion milling device based on the information on the machining position and the machining width of the wide region milling. 13 . An ion milling method which machines a sample by emitting an ion beam to the sample of which at least a part is shielded by a mask, comprising: disposing the sample on an optical microscope, and setting a plurality of machining positions, in the sample, of a multipoint milling which machines a plurality of places of the sample using the optical microscope; transmitting information on the plurality of machining positions of the multipoint milling to a control unit which controls a milling operation; taking the sample out of the optical microscope and disposing the sample on an ion milling device; and causing the control unit to control the milling operation in the ion milling device based on the information on the plurality of machining positions of the multipoint milling. 14 . An ion milling method which uses an ion milling device to machine a sample by emitting an ion beam to the sample of which at least a part is shielded by a mask, comprising: setting a plurality of machining positions when a multipoint milling which machines a plurality of places of the sample is performed; setting the number of times of milling operations in the plurality of machining positions; and machining the plurality of machining positions of the sample according to information on the plurality of machining positions and the number of times of milling operations, wherein when the plurality of machining positions are machined by the multipoint milling, at least one time of milling operation is alternately performed in at least a part of the plurality of machining positions, and a plurality of times of milling operations is performed in at least one machining position of the plurality of machining positions with a time interval therebetween. 15 . The ion milling method according to claim 14 , wherein the milling operation is performed in another machining position between the milling operations in the at least one machining position where the plurality of milling operations are performed with a time interval therebetween. 16 . The ion milling method according to claim
Polishing; Etching · CPC title
for microworking, e. g. etching of gratings or trimming of electrical components · CPC title
Focused ion beam · CPC title
Program control · CPC title
Ion sources; Ion guns · CPC title
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