Mask plate and exposing method
US-9195143-B2 · Nov 24, 2015 · US
US2021191255A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2021191255-A1 |
| Application number | US-202017131297-A |
| Country | US |
| Kind code | A1 |
| Filing date | Dec 22, 2020 |
| Priority date | Dec 23, 2019 |
| Publication date | Jun 24, 2021 |
| Grant date | — |
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According to an aspect of the present disclosure there is provided a method for forming an EUVL pellicle, the method comprising: coating a carbon nanotube, CNT, membrane, and mounting the CNT membrane to a pellicle frame, wherein coating the CNT membrane comprises: pre-coating CNTs of the membrane with a seed material, and forming an outer coating on the pre-coated CNTs, the outer coating covering the pre-coated CNTs, the forming of the outer coating comprising depositing a coating material on the pre-coated CNTs by atomic layer deposition.
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What is claimed is: 1 . A method for forming an Extreme Ultraviolet Lithography (EUVL) pellicle, the method comprising: coating a carbon nanotube (CNT) membrane; and mounting the CNT membrane to a pellicle frame; wherein coating the CNT membrane comprises: pre-coating CNTs of the membrane with a seed material; and forming an outer coating on the pre-coated CNTs, the outer coating covering the pre-coated CNTs, the forming of the outer coating comprising depositing a coating material on the pre-coated CNTs by atomic layer deposition. 2 . The method according to claim 1 , wherein the seed material is deposited to form a seed layer with an average thickness in a range of 0.5 to 4 nm. 3 . The method according to claim 1 , wherein the seed material is deposited to form a seed layer with an average thickness in a range of 0.5 to 3 nm. 4 . The method according to claim 1 , wherein the seed material is deposited to form a seed layer with an average thickness in a range of 1 to 2 nm. 5 . The method according to claim 1 , wherein the seed material is deposited at a rate of 0.7 angstroms/s or lower. 6 . The method according to claim 1 , wherein the coating material is deposited to form an outer coating with an average thickness in the range of 0.5 to 4 nm. 7 . The method according to claim 1 , wherein the coating material is deposited to form an outer coating with an average thickness in the range of 1 to 2 nm. 8 . The method according to claim 1 , wherein the seed material is selected from the group of: C, Zr, ZrN, Hf, HfN, B, B 4 C, BN, Y, YN, La, LaN, SiC, SiN, Ti, TiN, W, Be, Au, Ru, Al, Mo, MoN, Sr, Nb, Sc, Ca, Ni, Ni—P, Ni—B, Cu, and Ag. 9 . The method according to claim 1 , wherein the coating material is Zr, Al, B, C, Hf, La, Nb, Mo, Ru, Si, Ti, or Y, or carbides, nitrides, or oxides thereof. 10 . The method according to claim 1 , wherein the seed material and the coating material are selected from the group of: Zr seed material and ZrO 2 coating material; B seed material and ZrO 2 coating material, HfO 2 coating material or Al 2 O 3 coating material; B 4 C seed material and ZrO 2 coating material, HfO 2 coating material or Al 2 O 3 coating material; Zr seed material and Al 2 O 3 coating material or ZrAlOx coating material; Mo seed material and ZrO 2 coating material. 11 . The method according to claim 1 , wherein pre-coating the CNTs with seed material comprises depositing seed material by physical vapor deposition. 12 . The method according to claim 11 , wherein the seed material is deposited by thermal evaporation, e-beam evaporation or remote plasma sputtering. 13 . The method according to claim 11 , wherein pre-coating the CNTs with seed material comprises depositing seed material from a first side of the membrane and then depositing seed material from a second opposite side of the membrane. 14 . A method according to claim 13 , wherein pre-coating is performed in a deposition tool comprising a substrate holder supporting the membrane, and wherein the deposition of seed material is performed during continuous rotation of the substrate holder. 15 . The method according to claim 1 , wherein pre-coating the CNTs with seed material comprises depositing seed material by electrochemical deposition or electroplating. 16 . The method according to claim 1 , wherein the coating material is deposited by thermal atomic layer deposition. 17 . The method according to claim 1 , wherein the CNT membrane is coated prior to being mounted to the pellicle frame. 18 . A method for forming an Extreme Ultraviolet Lithography (EUVL) pellicle, the method comprising: coating a carbon nanotube (CNT) membrane; and mounting the CNT membrane to a pellicle frame; wherein coating the CNT membrane comprises: pre-coating CNTs of the membrane with a seed material by physical vapor deposition; and forming an outer coating on the pre-coated CNTs, the outer coating covering the pre-coated CNTs, the forming of the outer coating comprising depositing a coating material on the pre-coated CNTs by atomic layer deposition.
Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof · CPC title
Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof · CPC title
Optical system protection, e.g. pellicles or removable covers for protection of mask · CPC title
characterised by the frames, e.g. structure or material, including bonding means therefor · CPC title
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