Method of forming vanadium nitride layer and structure including the vanadium nitride layer

Patent metadata

Field	Value
Publication number	US-2021180184-A1
Application number	US-202017113242-A
Country	US
Kind code	A1
Filing date	Dec 7, 2020
Priority date	Dec 17, 2019
Publication date	Jun 17, 2021
Grant date	—

Abstract

Methods and systems for depositing vanadium nitride layers onto a surface of the substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a vanadium nitride layer onto a surface of the substrate. The cyclical deposition process can include providing a vanadium halide precursor to the reaction chamber and separately providing a nitrogen reactant to the reaction chamber. The cyclical deposition process may desirably be a thermal cyclical deposition process.

First claim

1 . A method of forming a gate electrode structure, the method comprising the steps of:
providing a substrate within a reaction chamber of a reactor; and using a cyclical deposition process, depositing a vanadium nitride layer onto a surface of the substrate, wherein the cyclical deposition process comprises:
providing a vanadium halide precursor to the reaction chamber; and
providing a nitrogen reactant to the reaction chamber.

2 . The method of claim 1 , wherein the vanadium halide precursor comprises one or more of a vanadium halide and a vanadium oxyhalide.

3 . The method of claim 2 , wherein the vanadium halide is selected from the group consisting of a vanadium fluoride, a vanadium chloride, a vanadium bromide, and a vanadium iodide.

4 . The method of claim 2 , wherein the vanadium oxyhalide is selected from the group consisting of a vanadium oxyfluoride, a vanadium oxychloride, a vanadium oxybromide, and a vanadium oxyiodide.

5 . The method of claim 1 , wherein the cyclical deposition process comprises an atomic layer deposition process.

6 . The method of claim 1 , wherein the cyclical deposition process comprises a cyclical chemical vapor deposition process.

7 . The method of claim 1 , wherein the cyclical deposition process comprises a thermal process.

8 . The method of claim 1 , wherein a duration of the step of providing the nitrogen reactant to the reaction chamber is greater than or equal to 5 seconds, or greater than or equal to 10 seconds, or between about 5 seconds and about 10 seconds.

9 . The method of claim 1 , wherein a temperature of the substrate within the reaction chamber during the cyclical deposition process is between about 20° C. and about 800° C.

10 . The method of claim 1 , wherein a pressure within the reaction chamber during the cyclical deposition process is less than 760 Torr.

11 . The method of claim 1 , wherein the nitrogen reactant is selected from one or more of ammonia (NH 3 ), hydrazine (N 2 H 4 ), and other compounds comprising or consisting of nitrogen and hydrogen.

12 . The method of claim 1 , wherein the nitrogen reactant does not include diatomic nitrogen.

13 . A method of forming a structure comprising a vanadium nitride layer, the method comprising the steps of:
providing a substrate within a reaction chamber of a reactor; and using a thermal cyclical deposition process, depositing a layer comprising vanadium nitride onto a surface of the substrate, wherein the thermal cyclical deposition process comprises:
providing a vanadium halide precursor to the reaction chamber; and
providing a nitrogen reactant to the reaction chamber.

14 . The method of claim 13 , wherein the vanadium halide precursor comprises one or more of a vanadium halide and a vanadium oxyhalide.

15 . The method of claim 13 , wherein the nitrogen reactant is selected from one or more of ammonia (NH 3 ), hydrazine (N 2 H 4 ), and other compounds comprising or consisting of nitrogen and hydrogen.

16 . The method of claim 13 , wherein the nitrogen reactant does not include diatomic nitrogen.

17 . The method of claim 13 , wherein the thermal cyclical deposition process comprises one or more of a cyclical chemical vapor deposition process and an atomic layer deposition process.

18 . The method of claim 1 , wherein the thermal cyclical deposition process does not comprise use of a nitrogen plasma.

19 . The method of claim 1 , wherein the thermal cyclical deposition process does not comprise use of excited nitrogen species.

20 . The method of claim 1 , wherein the thermal cyclical deposition process does not comprise use of nitrogen radicals.

21 . A structure comprising a vanadium nitride layer formed according to the method of claim 1 .

22 . The structure of claim 21 , wherein a work function of the vanadium nitride layer is >4.6 eV, >4.7 eV, >4.8 eV, >4.9 eV, >4.95 eV, or >5.0 eV.

23 . The structure of claim 21 , wherein a RMS roughness of the vanadium nitride layer is <1.0 nm, <0.7 nm, <0.5 nm, <0.4 nm, <0.35 nm, or <0.3 nm at a thickness of less than 10 nm.

24 . A system comprising:
one or more reaction chambers; a precursor gas source comprising a vanadium halide precursor; a nitrogen reactant gas source; an exhaust source; and a controller, wherein the controller is configured to control gas flow into at least one of the one or more reaction chambers to form a vanadium nitride layer overlying a surface of a substrate using a thermal cyclical deposition process.

Assignees

• Asm Ip Holding Bv

Inventors

• Alessio Verni Giuseppe
• Xie Qi
• Jussila Henri
• Dezelah Charles
• Kim Jiyeon
• Shero Eric James
• Ma Paul

Classifications

• H10P14/43 Primary

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• H10D64/01318

  the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN (comprising a layer of alloys of Si, Ge or C H10D64/01314) · CPC title

• H10D64/667

  the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers (having lateral variation H10D64/671) · CPC title

• H10D64/60

  Electrodes characterised by their materials · CPC title

• H10D64/685

  being perpendicular to the channel plane · CPC title