What is claimed is:
1 . A method comprising:
depositing a metal layer onto a top surface of a substrate; depositing a handle layer onto a top surface of the metal layer, wherein a portion of the handle layer overlaps the metal layer and the substrate; spalling a portion of the substrate thereby forming a spalled substrate layer; porosifying the spalled substrate layer thereby forming a porous substrate layer; depositing an electrolyte layer onto a top surface of the porous substrate layer, wherein the electrolyte layer is in direct contact with the porous substrate layer; and depositing a cathode onto a top surface of the electrolyte layer.
2 . The method of claim 1 , further comprising:
depositing a cathode contact layer onto a top surface of the cathode, wherein the cathode contact layer is in direct contact with the cathode.
3 . The method of claim 1 , wherein the porous substrate layer is made of silicon.
4 . The method of claim 1 , wherein the porous substrate layer is an anode.
5 . The method of claim 1 , wherein the metal layer is made of non-reactive metal having high tensile strength.
6 . The method of claim 1 , further comprising:
initiating a spalling mode fracture in the substrate at a depth below a substrate/metal layer interface; and pulling of the handle layer causing the portion of the substrate to be spalled.
7 . A method comprising:
growing a layer of doped silicon on top of a top surface of a substrate; porosifying the layer of doped silicon thereby forming a porous substrate layer; depositing a cathode on top of the porous substrate layer; depositing a metal layer on top of the cathode, wherein the metal layer is in direct contact with the cathode; depositing a handle layer directly on top of the metal layer; and spalling the porous substrate layer, the cathode, and the metal layer.
8 . The method of claim 7 , further comprising:
depositing an electrolyte layer on the top of the porous substrate layer, wherein the electrolyte layer is between the porous substrate layer and the cathode; and depositing an anode contact layer on top of the porous substrate layer.
9 . The method of claim 7 , further comprising:
initiating a spalling mode fracture in the substrate at a substrate/porous substrate layer interface; and pulling of the handle layer causing the porous substrate layer to be spalled.
10 . The method of claim 7 , further comprising:
initiating a spalling mode fracture in the substrate below a substrate/porous substrate layer interface; and pulling of the handle layer causing a portion of the substrate to be spalled thereby forming the spalled substrate layer.
11 . The method of claim 7 , wherein the porous substrate layer is made of silicon.
12 . The method of claim 7 , wherein the metal layer is made of non-reactive metal having high tensile strength.
13 . A structure comprising:
a porous substrate layer positioned along a metal layer, wherein the porous substrate layer is made of silicon; and a cathode positioned on top of an electrolyte layer, wherein the electrolyte layer separates the cathode from the porous substrate layer.
14 . The structure of claim 13 , further comprising:
a handle layer positioned below the metal layer, wherein the metal layer separates the handle layer from the porous substrate layer; and a cathode contact layer positioned on top of the cathode.
15 . The structure of claim 13 , wherein the metal layer is made of non-reactive metal having high tensile strength.