Method for fabricating an electronic device

US2021125957A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2021125957-A1
Application numberUS-201917257651-A
CountryUS
Kind codeA1
Filing dateJul 4, 2019
Priority dateJul 4, 2018
Publication dateApr 29, 2021
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The method for fabricating a device includes the following successive steps: providing a first substrate made from silicon of (100), (110) or (111) orientation, from a material of III-IV type or from a material of II-VI type, provided with at least one salient metal pad, and providing a second substrate; fixing the first substrate with the second substrate, the at least one metal pad forming a blocking means preventing movement beyond a threshold position; and performing an anneal of the metal pad so as to melt the metal pad and eliminate the blocking means.

First claim

Opening claim text (preview).

1 - 19 . (canceled) 20 . Method for fabricating an electronic device comprising the following successive steps: providing a first substrate made from silicon of (100), (110) or (111) orientation, from a material of III-IV type or from a material of II-VI type, provided with at least one salient metal pad, and providing a second substrate; fixing the first substrate with the second substrate, the at least one salient metal pad forming a blocker configured to come into contact with the second substrate when the second substrate reaches a threshold position with respect to the first substrate; performing an anneal of the metal pad so as to melt the at least one salient metal pad and eliminate the blocker. 21 . Method for fabricating according to claim 20 , wherein the first substrate is fixed to the second substrate by means of a spacer and when fixing of the first substrate with the second substrate is performed, the at least one salient metal pad is arranged to block the movement of a surface of the first substrate with respect to the second substrate at a predefined separating distance in a direction perpendicular to said surface of the second substrate. 22 . Method for fabricating according to claim 21 , wherein the at least one salient metal pad is formed on a first electrode and wherein the anneal transforms the at least one salient metal pad into an additional electrode electrically connected to the first electrode. 23 . Method for fabricating according to claim 21 , comprising a compression step of the spacer when fixing of the first substrate with the second substrate takes place so as to arrange the second substrate in contact with at least one salient metal pad. 24 . Method for fabricating according to claim 20 , wherein when fixing the first substrate with the second substrate, the at least one salient metal pad is arranged to block movement of the first substrate with respect to the second substrate in a direction parallel to a surface of the first substrate supporting the second substrate. 25 . Method for fabricating according to claim 24 , wherein the at least one salient metal pad is formed on an electric contact, the anneal transforming at least one salient metal pad into an additional electric contact and wherein an electronic component is fixed to the first substrate and is electrically connected to the first substrate by means of the additional electric contact. 26 . Method for fabricating according to claim 24 , wherein the first substrate is fixed to the second substrate by means of a spacer, wherein the first substrate, the spacer and the second substrate define at least one lateral groove, and wherein when fixing the first substrate with the second substrate, the at least one salient metal pad is arranged to block movement of the first substrate with respect to the second substrate in a direction parallel to a surface of the first substrate supporting the second substrate, the at least one salient metal pad preventing insertion of a wire-like element in the lateral groove, the anneal transforming the at least one salient metal pad before a wire-like element is inserted in the lateral groove. 27 . Method for fabricating according to claim 26 , wherein the at least one salient metal pad is formed on an electric track, the anneal transforming the at least one salient metal pad into an electric contact, and wherein the wire-like element is electrically conducting and is electrically connected to the electric track by means of the electric contact. 28 . Method for fabricating according to claim 20 , wherein a wire-like element is installed on the first substrate between two metal pads so that the two metal pads block movement of the wire-like element in a direction parallel to a surface of the first substrate supporting the wire-like element and wherein when annealing of the two metal pads is performed, the molten material partially covers the wire-like element by capillarity. 29 . Method for fabricating according to claim 28 , wherein a fixing layer is deposited on the wire-like element and the metal material after the annealing step to secure the wire-like element with the first substrate. 30 . Method for fabricating according to claim 28 , wherein the wire-like element is installed on a support and the first substrate blocks the wire-like element against the support, the wire-like element being blocked during the annealing step. 31 . Method for fabricating according to claim 20 , wherein the first substrate is fixed to the second substrate by means of a spacer and when fixing of the first substrate with the second substrate is performed, the at least one metal pad is constrained between the first and second substrates, and wherein the spacer, the first substrate and the second substrate define a channel sealed off by the at least one salient metal pad, the annealing step making the at least one salient metal pad change to molten state to open the channel. 32 . Electronic device comprising: a first substrate made from silicon of (100), (110) or (111) orientation, from a material of III-IV type or from a material of II-VI type, provided with at least one salient metal pad; a second substrate fixed to the first substrate by a layer of polymer material, the first substrate being mounted movable with respect to the second substrate so as to allow movement of the second substrate with respect to a surface of the first substrate; wherein the at least one salient metal pad is a blocker configured to prevent movement of the first substrate with respect to the second substrate beyond a threshold position, the at least one salient metal pad being formed from a material having a melting temperature that is lower than the degradation temperature of the polymer material layer. 33 . Electronic device according to claim 32 , wherein the layer is an adhesive layer to be polymerised, the adhesive layer to be polymerised allowing sliding of the first substrate with respect to the second substrate, the at least one salient metal pad having a melting temperature that is higher than the polymerisation temperature of the layer. 34 . Electronic device according to claim 32 , wherein the first substrate is fixed to the second substrate by means of a spacer, the first substrate, the spacer and the second substrate defining at least one lateral groove and wherein the at least one salient metal pad prevents insertion of a wire-like element in the lateral groove. 35 . Electronic device according to claim 32 , wherein the first substrate comprises an electric contact covered by the at least one salient metal pad, the at least one salient metal pad being formed from a material having a lower melting temperature than the melting temperature of the material forming the electric contact. 36 . Electronic device according to claim 32 , wherein the first substrate comprises at least two salient metal pads separated by a wire-like element, the at least two salient metal pads being formed from a material having a melting temperature that is lower than the degradation temperature of the material forming the wire-like element. 37 . Electronic device according to claim 32 , wherein the first substrate is fixed to the second substrate by means of a spacer made from polymer material, the first substrate, the spacer and the second substrate defining a closed cavity, the second substrate forming the cover capping the cavity and the at least one salient metal pad preventing the second substrate from moving towards the first substrate. 3

Assignees

Inventors

Classifications

  • between stacked chips · CPC title

  • by heating, e.g. melting or causing diffusion · CPC title

  • changes in materials · CPC title

  • using a polymer adhesive, e.g. an adhesive based on silicone or epoxy · CPC title

  • Active alignment, e.g. using optical alignment using marks or sensors · CPC title

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What does patent US2021125957A1 cover?
The method for fabricating a device includes the following successive steps: providing a first substrate made from silicon of (100), (110) or (111) orientation, from a material of III-IV type or from a material of II-VI type, provided with at least one salient metal pad, and providing a second substrate; fixing the first substrate with the second substrate, the at least one metal pad forming a …
Who is the assignee on this patent?
Commissariat Energie Atomique
What technology area does this patent fall under?
Primary CPC classification H10W72/073. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Apr 29 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).