Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

Patent metadata

Field	Value
Publication number	US-2021123137-A1
Application number	US-202017139262-A
Country	US
Kind code	A1
Filing date	Dec 31, 2020
Priority date	Jul 5, 2018
Publication date	Apr 29, 2021
Grant date	—

Abstract

There is provided a technique that includes forming a film on at least one substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) performing a first set a number of times, the first set including non-simultaneously performing: supplying a precursor to the at least one substrate from at least one first ejecting hole of a first nozzle arranged along a substrate arrangement direction of a substrate arrangement region where the at least one substrate is arranged; and supplying a reactant to the at least one substrate; and (b) performing a second set a number of times, the second set including non-simultaneously performing: supplying the precursor to the at least one substrate from at least one second ejecting hole of a second nozzle arranged along the substrate arrangement direction of the substrate arrangement region; and supplying the reactant to the at least one substrate.

First claim

What is claimed is:

1 . A method of manufacturing a semiconductor device, comprising
forming a film on at least one substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) performing a first set a predetermined number of times, the first set including non-simultaneously performing:
supplying a precursor to the at least one substrate from at least one first ejecting hole of a first nozzle arranged along a substrate arrangement direction of a substrate arrangement region where the at least one substrate is arranged; and
supplying a reactant to the at least one substrate; and
(b) performing a second set a predetermined number of times, the second set including non-simultaneously performing:
supplying the precursor to the at least one substrate from at least one second ejecting hole of a second nozzle arranged along the substrate arrangement direction of the substrate arrangement region; and
supplying the reactant to the at least one substrate,
wherein a structure of the first nozzle and a structure of the second nozzle are different from each other, and at least a portion of an installation region of the at least one first ejecting hole in the first nozzle and at least a portion of an installation region of the at least one second ejecting hole in the second nozzle overlap each other in the substrate arrangement direction.

2 . The method of claim 1 , wherein an opening area of the at least one first ejecting hole and an opening area of the at least one second ejecting hole are different from each other.

3 . The method of claim 1 , wherein a shape of the at least one first ejecting hole and a shape of the at least one second ejecting hole are different from each other.

4 . The method of claim 3 , wherein one of the at least one first ejecting hole and the at least one second ejecting hole has a shape including a slit shape, and the other one different from the one of the at least one first ejecting hole and the at least one second ejecting hole has a shape including a circular shape.

5 . The method of claim 3 , wherein an opening area of one of the at least one first ejecting hole and the at least one second ejecting hole decreases from one end toward the other end of the substrate arrangement region in the substrate arrangement direction.

6 . The method of claim 5 , wherein an opening area of the other one different from the one of the at least one first ejecting hole and the at least one second ejecting hole increases from the one end toward the other end of the substrate arrangement region in the substrate arrangement direction.

7 . The method of claim 5 , wherein an opening area of the other one different from the one of the at least one first ejecting hole and the at least one second ejecting hole is uniform from the one end toward the other end of the substrate arrangement region in the substrate arrangement direction.

8 . The method of claim 1 , wherein one of the at least one first ejecting hole and the at least one second ejecting hole is configured such that an amount of adsorption of a main element contained in the precursor on a surface of the at least one substrate increases from one end toward the other end of the substrate arrangement region in the substrate arrangement direction, and
wherein the other one different from the one of the at least one first ejecting hole and the at least one second ejecting hole is configured such that the amount of adsorption of the main element contained in the precursor on the surface of the at least one substrate decreases from the one end toward the other end of the substrate arrangement region in the substrate arrangement direction.

9 . The method of claim 1 , wherein one of the at least one first ejecting hole and the at least one second ejecting hole is configured such that a thickness of a layer containing a main element contained in the precursor and being formed on a surface of the at least one substrate increases from one end toward the other end of the substrate arrangement region in the substrate arrangement direction, and
wherein the other one different from the one of the at least one first ejecting hole and the at least one second ejecting hole is configured such that the thickness of the layer containing the main element contained in the precursor and being formed on the surface of the at least one substrate decreases from the one end toward the other end of the substrate arrangement region in the substrate arrangement direction.

10 . The method of claim 1 , wherein one of the at least one first ejecting hole and the at least one second ejecting hole is configured such that a residence time of the precursor on a surface of the at least one substrate increases from one end toward the other end of the substrate arrangement region in the substrate arrangement direction, and
wherein the other one different from the one of the at least one first ejecting hole and the at least one second ejecting hole is configured such that the residence time of the precursor on the surface of the at least one substrate decreases from the one end toward the other end side of the substrate arrangement region in the substrate arrangement direction.

11 . The method of claim 1 , wherein one of the at least one first ejecting hole and the at least one second ejecting hole is configured such that a flow velocity of the precursor on a surface of the at least one substrate decreases from one end toward the other end of the substrate arrangement region in the substrate arrangement direction, and
wherein the other one different from the one of the at least one first ejecting hole and the at least one second ejecting hole is configured such that the flow velocity of the precursor on the surface of the at least one substrate increases from the one end toward the other end of the substrate arrangement region in the substrate arrangement direction.

12 . The method of claim 1 , wherein at least one selected from the group of an inter-substrate film thickness uniformity and an inter-substrate composition uniformity of the film formed on the at least one substrate is controlled by respectively controlling the number of times of performing the first set in (a) and the number of times of performing the second set in (b).

13 . The method of claim 1 , wherein the precursor supplied from the first nozzle and the precursor supplied from the second nozzle are halosilane.

14 . The method of claim 13 , wherein the precursor supplied from the first nozzle and the precursor supplied from the second nozzle are chlorosilane.

15 . A substrate processing apparatus comprising:
a process chamber in which at least one substrate is accommodated in a state where the at least one substrate is arranged; a first supply system including a first nozzle disposed along a substrate arrangement direction of a substrate arrangement region where the at least one substrate is arranged, and being configured to supply a precursor to the at least one substrate from at least one first ejecting hole of the first nozzle; a second supply system including a second nozzle disposed along the substrate arrangement direction of the substrate arrangement region, and being configured to supply the precursor to the at least one substrate from at least one second ejecting hole of the second nozzle; a third supply system configured to supply a reactant to the at least one substrate, and a controller configured to be capable of controlling the first supply system, the second supply system, and the third supply system to perform a process of for

Assignees

• Kokusai Electric Corp

Inventors

• Hatta Hiroki
• Hanashima Takeo
• Kuribayashi Koei
• SONE Shin

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6927

  the material being a silicon oxynitride, e.g. SiON or SiON:H · CPC title

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title