Light receiving device

Patent metadata

Field	Value
Publication number	US-2021066521-A1
Application number	US-202016999421-A
Country	US
Kind code	A1
Filing date	Aug 21, 2020
Priority date	Aug 28, 2019
Publication date	Mar 4, 2021
Grant date	—

Abstract

A light receiving device includes a substrate, a first contact layer disposed on a surface of the substrate, a light receiving layer disposed on the first contact layer, an intermediate layer disposed on the light receiving layer, a wide-gap layer having a pn junction disposed on the intermediate layer, a second contact layer disposed on the wide-gap layer, and a groove formed for pixel isolation by removing the second contact layer and part of the wide-gap layer, wherein the intermediate layer has a wider band gap than the light receiving layer, and wherein the wide-gap layer has a wider band gap than the intermediate layer.

First claim

What is claimed is:

1 . A light receiving device comprising:
a substrate; a first contact layer disposed on a surface of the substrate; a light receiving layer disposed on the first contact layer; an intermediate layer disposed on the light receiving layer; a wide-gap layer having a pn junction disposed on the intermediate layer; a second contact layer disposed on the wide-gap layer; and a groove formed for pixel isolation by removing the second contact layer and part of the wide-gap layer, wherein the intermediate layer has a wider band gap than the light receiving layer, and wherein the wide-gap layer has a wider band gap than the intermediate layer.

2 . The light receiving device as claimed in claim 1 , wherein the intermediate layer is made of a plurality of layers having different composition ratios, and the plurality of layers are arranged in an ascending order of band gaps from the light receiving layer to the wide-gap layer.

3 . The light receiving device as claimed in claim 1 , wherein the wide-gap layer includes a p-type wide-gap layer and an n-type wide-gap layer, the n-type wide-gap layer serving as a bottom surface of the groove.

4 . The light receiving device as claimed in claim 1 , wherein light incident on an opposite surface of the substrate is detected.

5 . The light receiving device as claimed in claim 1 , wherein the light receiving layer includes InGaAs, and the intermediate layer includes InGaAsP, with the wide-gap layer including InP.

6 . The light receiving device as claimed in claim 1 , wherein a side surface of the wide-gap layer situated at a sidewall of the groove is covered with a passivation film made of SiN or SiON.

7 . The light receiving device as claimed in claim 1 , wherein the first contact layer is an n-type contact layer, and the second contact layer is a p-type contact layer.

8 . The light receiving device as claimed in claim 1 , wherein pixels isolated by a plurality of said grooves are arranged in a one-dimensional array or in a two-dimensional array.

Assignees

• Sumitomo Electric Industries

Inventors

• Iguchi Yasuhiro

Classifications

• H10F39/807

  Pixel isolation structures · CPC title

• H10F30/222

  the potential barrier being a PN heterojunction · CPC title

• H10F30/2215

  the devices comprising active layers made of only Group III-V materials · CPC title

• H10F77/1248 Primary

  having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP · CPC title

• H10F39/107

  having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays · CPC title